跳到主要內容

簡易檢索 / 詳目顯示

回結果列表
研究生： 吳衍祥
Yen-Shian Wu
論文名稱： 具有部分摻雜光吸收層之高功率高響應度及高頻寬漸耦合式邊射型光檢測器
High Power, High Responsivity, and High Speed Evanescently Coupled Photodiode with Partially P-doped Absorption Layer
指導教授： 許晉瑋
Jin-Wei Shi
詹益仁
Yi-Jen Chan
口試委員:
學位類別： 碩士
Master
系所名稱： 資訊電機學院 - 電機工程學系
Department of Electrical Engineering
畢業學年度： 93
語文別： 中文
論文頁數： 67
中文關鍵詞： 漸耦合式光波導 、側照式 、光二極體
外文關鍵詞： evanescently coupled waveguide, side-illumination, photodiode
相關次數： 點閱：17  下載：0 
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報

    • 本論文針對1.55μm波長的光纖通訊系統中接收端前級元件光二極體之製作與研究，在幾何結構上採用漸耦合式光波導結構結合部分摻雜吸收層的主動區域，以期能達到高速、高功率及高響應度的表現，首先利用模擬軟體來模擬光在前端光波導內傳遞的情形，在利用數學運算軟體模擬電性的表現並加入高功率操作的模擬參數，以此決定此邊耦合光檢測器的磊晶結構與所需之製程光罩與流程，再利用外插節拍量測法測量並分析元件之特性。

    1. 前言.......................................................................................................1 2. 理論背景與研究範圍..........................................................................3 3. 研究內容...............................................................................................6 §3.1 耦合式光檢測器(Evanescently Coupled Photodetector, ECPD)之設計原理.................................................6 3.1.1 幾何結構之設計...............................................................6 3.1.2 磊晶結構之設計...............................................................9 §3.2 主動元件模擬..........................................................................13 3.2.1 光性模擬部分.................................................................13 3.2.2 電性模擬.........................................................................18 §3.3 元件製作..................................................................................25 3.3.1 製程步驟.........................................................................25 3.3.2 製程考量.........................................................................31 4. 量測成果說明....................................................................................36 §4.1 量測系統架設與步驟.............................................................36 §4.2 光電量測結果..........................................................................40 4.2.1 光響應度量測結果(圖 4-3)： ....................................40 4.2.2 頻寬量測結果(圖 4-4~9)：.........................................41 4.2.3 高功率產生量測結果(圖 4-10~12)： ........................45 §4.3 實驗結果與模擬之比較.........................................................47 5. 研究成果效益....................................................................................49 6. 參考文獻.............................................................................................52 7. 發表文獻..............................................................................................55

    [1]. Y. Muramoto, and T. Ishibashi, “InP/InGaAs pin photodiode structure maximising bandwidth and efficiency”, Electron. Lett., vol. 39, pp. 1749- 1750, NOV. 2003.
    [2]. Stephane Demiguel, Ning Li, Xiaowei Li, Xiaoguang Zheng, Jooyong Kim, Joe C. Campbell, Hanfei Lu, and Alex Anselm, ”Very high-responsivity evanescently coupled photodiodes integrating a short planar multimode waveguide for high-speed applications”, IEEE Photon. Technol. Lett., Vol. 15, pp. 1761- 1763, DEC. 2003.
    [3]. M. Achouche, V. Magnin, J. Harari, F. Lelarge, E. Derouin, C. Jany, D. Carpentier, F. Blache, and D. Decoster, ” High performance evanescent edge coupled waveguide unitraveling-carrier photodiodes for >40-gb/s optical receivers” , IEEE Photon. Technol. Lett., Vol. 16, No.2, pp. 584- 586, FEB. 2004.
    [4]. T. Takeuchi, T. Nakata, K. Makita, and T. Torikai, ”High-power and high-efficiency photodiode with an evanescently coupled graded-index waveguide for 40 Gb/s applications” Optical Fiber Communication Conference and Exhibit, Vol. 3, pp. WQ2-1 - WQ2-3, 2001.
    [5]. Jian Wei, Fengnian Xia, and Stephen R. Forrest,” A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode”, IEEE Photon. Technol. Lett., Vol. 14, No.11, pp. 1590- 1592, NOV. 2002.
    [6]. Hongling Rao, M. J. Steel, Rob Scarmozzino, Member, IEEE, and Richard M. Osgood, Jr., Fellow, IEEE,” Complex propagators for evanescent waves in bidirectional beam propagation method”, J. Lightwave Technol., Vol. 18, No. 8, pp. 1155-1160, AUG. 2000.
    [7]. J. S. YU, S. H. Kim, T. I. Kim,”PtTiPtAu and PdTiPtAu ohmic contacts to p-InGaAs”, Compound Semiconductors, 8-11 pp. 175 – 178, Sept. 1997.
    [8]. S. Kawanishi, M. Saruwatari,”A very wide-band frequency response measurement system using optical heterodyne detection”, Instrumentation and Measurement, IEEE Trans. Instrumentation and Measurement, Vol. 38, No. 2, pp. 569 - 573,APR. 1989.
    [9]. Hiroshi It0 and Tadao Ishibashi,”Ultrafast uni-traveling carrier photodiode”, Device Research Conference, 58th DRC , 19-21, pp. 165 – 168, JUN. 2000.
    [10]. Fengnian Xia, John K. Thomson, Milind R. Gokhale, Pavel V. Studenkov, Jian Wei, Wilson Lin, and Stephen R. Forrest,”An asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler”, IEEE Photon. Technol. Lett., Vol. 13, No.8, pp. 845-847, AUG. 2001.

    QR CODE
    :::