在本篇論文中，我們主要使用C語言，建立出一套可以更精確模擬半導體元件，其為增點式正方形網格。用來提升模擬二維半導體元件之不規則接面處的準確度，並且比較傳統之正方形網格與增點式正方形網格之差異性，接著使用簡易電阻作理論計算，再與模擬結果相互比較來驗證，即可得知此架構是否設計正確並可行。最後，我們將增點式正方形網格應用在不規則形狀之半導體元件及應用在MOS電容器結構上，並加以探討在半導體元件上之不規則接面處，其臨限電壓與能帶曲線圖的變化與影響。

In this thesis, we use C++ language to develop a new point-added square element for 2-D device simulation. It is used to improve the simulation of 2-D semiconductor device on irregular junction. Besides, we compare the difference between the traditional square element and point-added square element, and a simple resistor will be used to verify our result with theoretical value. After finishing these process, the point-added square element can be used in our simulation. In addition, we use the point-added square element to apply on the special semiconductor device, such as the resistor that it looks like a ring shape. We can also apply this new element on MOS capacitor. At last, we discuss the variation of threshold voltage and energy band on irregular junction of semiconductor device.

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