抑制層對降低電漿輔助原子層沉積二氧化鉿薄膜結晶之研究

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研究生：	何宜祐 Yi-You He
論文名稱：	抑制層對降低電漿輔助原子層沉積二氧化鉿薄膜結晶之研究 Reduce the crystallization of Plasma-Enhanced Atomic Layer Deposition HfO2 thin film by insert interlayer
指導教授：	郭倩丞 Chien-Cheng Kuo
口試委員:
學位類別：	碩士 Master
系所名稱：	理學院 - 光電科學與工程學系 Department of Optics and Photonics
論文出版年：	2021
畢業學年度：	109
語文別：	中文
論文頁數：	74
中文關鍵詞：	抑制薄膜結晶、原子層沉積
外文關鍵詞：	Atomic Layer Deposition, Reduce the crystallization
相關次數：	點閱：8 下載：0
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本論文使用電漿輔助原子層沉積法鍍製二氧化鉿(HfO2)單層膜，在低溫製程100ºC下使用水、純氧電漿、氧氣混合氬氣電漿等不同氧化方式，探討折射率(n)和消光係數(k)的趨勢來找出最佳參數，研究發現使用氧氬混合電漿，能夠增強介面化學反應且降低雜質，使消光係數(k)在波長550 nm下最低可達到1.6×10-4，分析在相同製程溫度下熱製程與電漿製程的結晶強度，也探討了在相同製程溫度條件下隨著薄膜厚度增加，薄膜的結晶強度變化。
由於原子層沉積技術在低溫100ºC下，使用電漿製程會比熱製程更容易使薄膜結晶，本論文研究出在HfO2薄膜中插入抑制層後成功降低薄膜結晶，過程中利用Macleod 軟體模擬，交叉驗證其方法的可行性，使用X光繞射儀分析HfO2薄膜，結晶強度成功從3126下降至110，降低了高達96%，用原子力顯微鏡分析薄膜表面，其薄膜粗糙度從1.94 nm下降至0.434 nm有著大幅度的進步，並使用掃描式電子顯微鏡觀察薄膜表面結晶情形，有著明顯表面平坦化的趨勢。

In this thesis, plasma-enhanced atomic layer deposition (PE-ALD) was used to deposit a single layer of hafnium dioxide (HfO2) onto the wafer substrate. ALD makes use of various oxidation methods using water, pure oxygen plasma, and oxygen mixed argon plasma under a low-temperature 100ºC process. One must explore the trend of refractive index (n) and extinction coefficient (k) to find the best possible parameters of the single layer in question. The study found the use of oxygen mixed argon hybrid plasma, can enhance interface chemical reaction and reduce impurities. The lowest extinction coefficient (k) can reach 1.6×10-4 at a wavelength of 550 nm. Following this, the crystal strength of the thermal process and the plasma process at the same process temperature was analyzed. In addition, the change of the film crystallization strength with the increase of the film thickness under the same process temperature was also discussed.
Since ALD technology uses plasma processes under low-temperature 100ºC processes, it is easier to crystallize thin film than the thermal process. This thesis studies the reduction of film crystallization by inserting a suppressor layer in the HfO2 film. Using Macleod software to simulate the process, the feasibility of the method was confirmed. An X-ray diffractometer was used to analyze HfO2 film. The crystal strength of HfO2 film was successfully reduced from 3126 to 151, which decreased the crystal strength of HfO2 film by 96%. The atomic force microscope (AFM) analysis of the film surface showed that the film roughness has decreased from 1.94 nm to 0.434 nm. Moreover, whilst using the Scanning Electron Microscope (SEM) for film surface observation, it resulted in a surface flattening trend. This significant result is the verification of the method's feasibility.

中文摘要    i
Abstract    ii
致謝    iii
目錄    iv
圖目錄    vi
表目錄    ix
第一章 緒論    1
1-1前言    1
1-2研究目的與動機    5
第二章 基礎理論與文獻回顧    7
2-1原子層沉積技術工作原理    7
2-1-1化學氣相沉積法    7
2-1-2原子層沉積法    9
2-1-3電漿輔助原子沉積系統(PEALD)    14
2-2 光學薄膜之基本要求    16
2-3文獻探討    18
第三章 實驗方法與使用儀器設備    24
3-1實驗方法    24
3-1-1 實驗流程    24
3-1-2 實驗步驟    25
3-2製程設備原理與條件    30
3-3量測儀器介紹與原理    32
3-3-1紫外光/可見光/近紅外光光譜儀    32
3-3-2橢圓偏振儀(Ellipsometer)    33
3-3-3掃描式電子顯微鏡(Scanning Electron Microscope, SEM)    34
3-3-4 X射線光電子能譜儀    35
(X-ray photoelectron spectroscopy, XPS)    35
3-3-5原子力顯微鏡(Atomic Force Microscope, AFM)    36
3-3-6 X光繞射儀(X Ray Diffractometer, XRD)    37
第四章 實驗結果與討論    38
4-1 HfO2薄膜之品質提升    38
4-2 HfO2薄膜之抑制結晶    46
第五章 結論    57
參考文獻    58

 
圖目錄
圖1-1 3D感測器[2]    1
圖1-2微陣列透鏡[4]    2
圖1-3自由曲面元件[5]    3
圖1-4 3D光學元件[6]    3
圖1-5（a）PVD沉積和（b）ALD沉積在半球透鏡上的示意圖[7]    4
圖1-6光學製造技術之尺寸與精度分布[8]    5
圖2-1 PE-CVD示意圖[9]    8
圖2-2 (1) PVD (2) CVD (3) ALD 示意圖    10
圖2-3使用ALD沉積的材料[12]    11
圖2-4 ALD窗口    12
圖2-5 ALD製程循環的一個週期[16]    13
圖2-6電漿製程擴展ALD窗口示意圖    15
圖2-7 (A)直接型(B)遠程型(C)自由基增強型 PE-ALD技術[19]    15
圖2-8 TH-ALD與PE-ALD在不同溫度下的GPC [22]    19
圖2-9 XPS碳、氮雜質分析圖[27]    20
圖2-10 TH-ALD與PE-ALD的結晶強度、粗糙度關係[23]    21
圖2-11 HfO2不同循環次數的結晶強度[23]    22
圖2-12 HfO2不同循環次數的薄膜粗糙度[23]    22
圖2-13 TiO2/Al2O3其結晶強度    23
圖2-14 TiO2/Al2O3其AFM分析    23
圖3-1實驗流程圖    24
圖3-2 HfO2製程循環1 cycle參數示意圖    26
圖3-3 SiO2製程循環1 cycle參數示意圖    26
圖3-4原子層沉積設備    30
圖3-5機械式幫浦    30
圖3-6機台架構示意圖    31
圖3-7 UH4150光譜儀    32
圖3-8光譜儀反射式光路圖    32
圖3-9橢圓偏振儀[28]    33
圖3-10橢圓偏振儀示意圖    33
圖3-11掃描式電子顯微鏡型    34
圖3-12 X射線光電子能譜儀    35
圖3-13 XPS之工作原理[29]    35
圖3-14原子力顯微鏡    36
圖3-15原子力顯微鏡示意圖[30]    36
圖3-16 X光繞射儀    37
圖4-1熱製程在不同製程溫度下n、k光譜圖    38
圖4-2電漿製程在不同製程溫度下n、k光譜圖    39
圖4-3亞穩態O原子的界面反應概念圖[27]    40
圖4-4熱製程、O2電漿製程、O2/Ar電漿製程n、k光譜圖    41
圖4-5 XPS碳元素分析(a) O2 plasma (b) O2/Ar plasma    42
圖4-6不同參數其n、k光譜圖    44
圖4-7反射率光譜圖    44
圖4-8 XRD量測不同製程溫度下其結晶強度    46
圖4-9 XRD量測不同製程方式其結晶強度    47
圖4-10 XRD量測不同cycle數其結晶強度    48
圖4-11 AFM量測不同厚度其平均粗糙度    49
圖4-12 SEM量測不同厚度其薄膜表面    50
圖4-13抑制薄膜結晶示意圖    51
圖4-14 Macleod模擬反射率光譜圖    52
圖4-15 XRD量測HfO2/SiO2不同抑制膜層數其結晶強度    53
圖4-16 AFM量測HfO2/SiO2不同抑制膜層數其平均粗糙度變化    54
圖4-17 SEM量測HfO2/SiO2不同抑制膜層數其薄膜表面    55
 
 
表目錄
表2-1近年來ALD之薄膜相關文獻    18
表3-1實驗使用之氣體與藥品規格    26
表3-2熱製程參數    27
表3-3電漿製程參數    28
表3-4實驗分析目的    29
表4-1熱製程與O2電漿製程之n、k比較    40
表4-2熱製程、O2電漿製程、O2/Ar電漿製程之n、k比較    41
表4-3 O2 plasma與O2/Ar plasma的XPS元素分析表    42
表4-4不同參數其n、k比較    43
表4-5不同溫度下熱製程之結晶強度    46
表4-6不同cycle數其結晶強度與平均粗糙度    48
表4-7 HfO2/SiO2插入cycle數    53

 
 


                                

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