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| 研究生： |
蔣以約 Yi-Yue Chiang |
|---|---|
| 論文名稱： |
以(100)矽基板上的氮化硼研製P型異質場效電晶體 Fabrication of P-Channel Heterostructure Field Effect Transistors with the Boron Nitride Grown on Si(100) Substrates |
| 指導教授： |
賴昆佑
Kun-Yu Lai |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
理學院 - 光電科學與工程學系 Department of Optics and Photonics |
| 論文出版年： | 2025 |
| 畢業學年度： | 113 |
| 語文別： | 中文 |
| 論文頁數： | 64 |
| 中文關鍵詞： | 高電子遷移率電晶體 、遷移率 、電晶體 、二維電洞氣 、霍爾量測 |
| 外文關鍵詞： | HFET, HEMT, p-channel, 2DHG, hall measurement |
| 相關次數： | 點閱：76 下載：1 |
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本論文探討氮化硼（boron nitride, BN）成長於矽（Si）基板上的異質結構特性，並嘗試以此磊晶結構所形成的二維電洞氣（two-dimensional hole gas, 2DHG），研製P型異質場效電晶體。
在實驗部分，我們使用金屬有機化學氣相沉積法（metal-organic chemical vapor deposition, MOCVD）於 Si(100) 基板上成長 BN 薄膜，形成BN/Si 異質結構。藉由低溫霍爾量測，我們發現BN/Si介面在 13 K 至 300 K 溫度範圍內，有極高的電洞濃度，穩定維持在 1.7~2.0 × 1015 cm−2，遷移率則介於 48~54 cm2/V⋅s，不會隨著溫度改變，呈現明顯的2DHG特性，與常見的摻雜(acceptor-doped)電洞不同。
為驗證此結構於元件上的應用潛力，我們製作具閘極控制之 P-channel 高電子遷移率電晶體（Heterostructure Field Effect Transistors, HFET），並進行直流電性量測。元件展現常開（depletion-mode）特性，且具備初步的閘極調變能力，顯示出 BN on Si 結構具備場效應控制特性，有機會應用在寬能隙 CMOS 邏輯電路。
This study aims to fabricate a p-channel heterostructure field effect transistor (HFET) with the boron nitride (BN) grown on Si(100) substrates. The BN layer was deposited on a Si (100) substrate using metal-organic chemical vapor deposition (MOCVD). According to the results of low-temperature Hall measurements (13K ~ 300K), the BN/Si interface delivered a stable hole density at 1.7~2.0 × 1015 cm−2, and hole mobility at 48~54 cm2/V⋅s, showing the two-dimensional hole gas (2DHG) behavior. The result is not attainable with the holes by acceptor doping, which exhibiting strong temperature dependence.
To explore the possibility in device applications, the BN-based p-channel HFETs were fabricated and characterized by DC measurements. The device exhibited the depletion-mode characteristics and demonstrated limited gate modulation capability. The result indicates that the 2DHG at BN/Si can be controlled by gate voltage, showing a potential for wide-bandgap CMOS logic circuits.
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