在現今實際BGA或Flip Chip銲點中，銲料的兩端分別為UBM或表面處理層。故一個實際銲點結構可視為一metal/solder/metal的三明治結構。而Ni/solder/Cu的結構又是微電子銲點中很常見的一種組合。故本研究主要的目的是要探討在此類的結構中，Cu/solder及Ni/solder間的界面反應是否會互相影響。亦即在Ni/solder/Cu銲點之兩界面間是否會有交互作用？然而在本實驗室過去的研究中曾經證實[TSA2]，在Flip Chip銲點中兩界面之交互作用在迴銲完後就已發生。但由於在迴銲的過程中，兩端會有部分的金屬溶入銲料當中，使整個系統變的過於複雜。故在本研究中，我們使用電鍍的方式，製造出Flip Chip尺寸的Ni/Sn/Cu擴散偶。利用其不需經過複雜的迴銲過程的優點，來探討在單純200 ℃的固態反應下，Cu、Ni在銲料間交互作用的情況。並將之與作為對照組的單一Ni/Sn、Cu/Sn界面反應結果比較，觀察其三者間的差異。
在單純200 ℃的固態反應15分鐘的時間。由金相觀察的結果發現，Ni、Cu兩端界面皆生成Cu-Sn介金屬，其組成由EPMA分析得知為Cu6Sn5的介金屬。故我們可以得知，在此Ni/Sn/Cu擴散偶中，經過短時間的固態反應後，Cu端Cu原子已擴散至Ni端影響其界面介金屬的生成。亦即此時Cu、Ni間的交互作用已經產生。經過長時間的反應，Ni、Cu兩端生成的介金屬種類並沒有變化，在Ni端為(Cu1-xNix)6Sn5，Cu端則為不含Ni的Cu6Sn5及Cu3Sn。但在介金屬的形態上，卻與一般固/固反應界面生成物的形態較為不同，會呈現較大的高低起伏。在反應動力學方面，在Ni/Sn/Cu系統中，經過長時間的固態反應後，當對端有Cu層存在時，使Ni界面生成以Cu為主的(Cu1-x Nix)6Sn5，故會抑致Ni端Ni的消耗。相反的當對端有Ni層存在時，使兩端界面皆生成以Cu為主的介金屬Cu6Sn5及Cu3Sn，故會加速Cu端Cu的消耗。

In a real solder joint, the solder is always sandwiches between two metals. And the Ni/solder/Cu combination is one of the most common one in microelectronics devices. The objective of this study is to investigate whether the cross-interaction will occur between the interface of solder/Cu and Ni/solder. In fact, it is reported that the two interfaces of Ni/solder/Cu joint would interact after reflow. Therefore, it is known that the dissolved metal results in the system become complex. As the result, the Ni/Sn/Cu diffusion couples were prepared by electroplating in this study to investigate the cross-interaction of Cu and Ni in solder joint only in solid/solid reaction. Experiments were carried out at 200 ℃ for 15 minutes. It was found that Cu6Sn5 compound existed at both Ni/Sn and Cu/Sn interface. Basing on the result, we can say that the cross-interaction of Ni and Cu in a solder joint occurred very quickly at 200 ℃thermal aging.
After long term thermal aging, the reaction product didn’t change at both Ni/Sn and Cu/Sn interface. There is(Cu1-xNix)6Sn5 at Ni/Sn interface and Cu6Sn5、Cu3Sn at Sn/Cu interface.Beside it, we found that the microstructure of these reaction product is different from Sn/Cu and Sn/Ni diffusion couple. In other words, the morphology of IMC is largger variation than Sn/Cu and Sn/Ni diffusion couple. In thermodynamic kinetics, it has been show that the formation of of (Cu1-xNix)6Sn5 over the Ni layer can reduce the Ni consumption rate. At the same time, the Cu consumption rate of the opposite side was accelerated.

[ALA] M. O. Alam, Y. C. Chan, and K. N. Tu, Chemistry of Materials, 15, p. 4340, 2003.
[BAD] S. Bader, W. Gust, and H. Hieber, Act Metallurgica et. Materialia, 43（1）, p. 329, 1995.
[CHA] C. W. Chang, Q. P. Lee, C. E. Ho, and C. R. Kao, Journal of Electronic Materials, under review.
[CHU] Chiang-Ming Chuang, and Kwang-Lung Lin, Journal of Electronics Materials, 32, p. 1426, 2003.
[CHE1] Shin-Wen Chen, Shyr-Harn Wu, and Shou-Wei Lee, Journal of Electronic Materials, 32, p. 1188, 2003.
[CHE2] Chih-Ming Chen, and Sinn Wen Chen, Journal of Applied Physics, 90, p. 1208, 2001.
[DAV] E. M. Davis et al., IBM, J. Res. Develop., 8, p. 102, 1964.
[DUA ] L. L. Duan, D. Q. Yu, S. Q. Han, J. Zhao, and L. Wang, IEEE International Conference on the Business of Electronic Product Reliability and Liability, p. 35, 2004.
[DYS] B. F. Dyson, T. R. Anthony, and D. Turnbull, Journal of Physics, 38, p. 3408, 1967.
[FUK] A. Fukuda and T. Yamaaguchi, Nikki Electronics Asia, p. 22, 1993.
[HE] Min He, Zhong Chen, and Guojun Qi, Acta Materialia, 52, p. 2047, 2004.
[HO1] C. E. Ho, Y. M. Chen, and C. R. Kao, Journal of Electronic Materials, 28, p. 1231, 1999.
[HO2] C. E. Ho, R. Zheng, G. L. Luo, A. H. Lin, and C. R. Kao, Journal of electronic materials, 29, p. 1175, 2000.
[HO3] C. E. Ho, R. Y. Tsai, Y. L. Lin, and C. R. Kao, Journal of Electronic Materials, 31, p. 584, 2002.
[HO4] C. E. Ho, Y. L. Lin, and C. R. Kao, Chemistry of Materials, 14, p. 949, 2002.
[IPC] IPC Roadmap for Lead-Free Electronics Assemblies, 2nd draft, IPC, Northbrook, IL, November 1999.
[KAN] S. K. Kang, W. K. Choi, D. Y. Shih, P. Lauro, D. W. Henderson, T. Gosselin, and D. N. Leonard, Electronic Components and Technology Conference, p. 146, 2002.
[LAU] J. J. Lau, H. Berg, Y. T. Wen, S. Mulgaonker, R. Bowlby, and A. Mawer, Materials Chemical and Physics, 40, p.236, 1995.
[LEE1] M. S. Lee, C. M. Liu, and C. R. Kao, Journal of Electronic Materials, 28, p.57, 1999.
[LEE2] Chang Bae Lee, Jeong Won Yoon, Su Jeong Suh, Seung-Boo Jung, Cheol Woong Yang, Chang-Chae Shur, and Young Eui Shin, Journal of Materials Science: Materials in Electronics, 14, p. 487, 2003.
[LEE3] T. Y. Lee, W. J. Choi, K. N. Tu, J. W. Jang, S. M. Kuo, J. K. Lin, D. R. Frear, K. Zeng, and J. K. Kivilahti, Journal of Material Research, 17, p. 291, 2002.
[LEE4] Hwa-Teng Lee, and Ming-Hung Chen, Materials Science and Engineering A333, 24, p. 24, 2002.
[LI] Ming Li, K. Y. Lee, D. R. Olsen, Willian T. Chen, Ben Tin Chong Tan, and Subodh Mhaisalkar, IEEE Transactions on Electronics Packaging, 25, p. 185, 2002.
[LIM] G. H. Lim, H. F. Kwan, and X. Q. Shi, IEEE Electronics Packaging Technology Conference, p. 578, 2003.
[LUO] W. C. Luo, C. E. Ho, J. Y. Tsai, Y. L. Lin, and C. R. Kao, Materials Science and Engineering A, under review.
[NEMI] National Electronics Manufacturing Initiative (NEMI) Lead-Free Readiness Task Force Report, NEMI, 1999.
[PRA] Kithva. H. Prakash, and Thirumany Sritharan, Journal of Electronics Materials, 32, p. 939, 2003.
[SER] D. P. Seraphim, R. C. Lasky and C-Y. Li, “Principle of Electronic Package,” McGraw-Hill, New York, 1993.
[TSA1] J. Y. Tsai, Y. C. Hu, C. M. Tsai, and C. R. Kao, Journal of Electronic Materials, 32, p. 1203, 2003.
[TSA2] C. M. Tsai, W. C. Luo, C. W. Chang, Y. C. Shieh, and C. R. Kao, Journal of electronic Materials, 33, p. 1424, 2004.
[TU1] K. N. Tu and K. Zeng, Materials Science and Engineering R, 34, p. 1, 2001.
[TU2] K. Zeng and K. N. Tu, Materials Science and Engineering R, 38, p. 55, 2002.
[TU3] K. N. Tu, and R. D. Thompson, Acta Meterialia, 30, p. 947, 1982.
[WAN] S. J. Wang, H. J. Kao, and C. Y. Liu, Journal of Electronic Materials, 33, p. 1130, 2004.
[YOO] Jeong-Won Yoon, Young-Ho Lee, Dae-Gon Kima, Han-Byul Kanga, Su-Jeong Suha, Cheol-Woong Yang, Chang-Bae Lee, Jong-Man Jung, Choong-Sik Yoo, and Seung-Boo Jung, Journal of Alloys and Compounds, 381, p. 151, 2004.
[王信介] 王信介碩士論文，中央大學化學工程研究所，2003。
[高振宏] TPCA教育訓練課程，Solder Bump Technologies, 2002。
[吳蒔涵] 吳蒔涵碩士論文，清華大學化學工程研究所，2002。
[劉家明] 劉家明、高振宏，中國材料學會1999年會論文集，L08， 1999。
[蕭本俐] 蕭本俐、何政恩、高振宏，中國材料學會1999年會論文集，H42，1999．
[蕭麗娟] 蕭麗娟碩士論文，中央大學化學工程研究所，2002。
[謝宗雍] 謝宗雍，電子月刊第三卷第七期，p. 57, 1997。