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研究生: 王俊凱
Chun-Kai Wang
論文名稱: 高速、高功率串接式可見光發光二極體
Linear Cascade Arrays of GaN Based Green Light Emitting Diodes for High-Speed and High-Power Performance
指導教授: 許晉瑋
Jin-Wei Shi
口試委員:
學位類別: 碩士
Master
系所名稱: 資訊電機學院 - 電機工程學系
Department of Electrical Engineering
畢業學年度: 95
語文別: 中文
論文頁數: 48
中文關鍵詞: 串接式氮化鎵發光二極體
外文關鍵詞: Cascade, GaN, Light-emitting-Diode
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  • 在本論文中,我們成功展示出在520nm波段,利用串接的方式來改善大型化後發光二極體的輸出功率以及外部量子效率。我們將串聯的數目從一顆提升到四顆,在相同操作電流下,輸出功率和單顆發光二極體比較確實可以達到四倍的改善。之後,我們進行串接式發光二極體在調變速度上的表現,在相同操作電流下,四顆和單顆有相似的3-dB頻寬約90MHz。
    從以上量測結果,我們推論串接的方式確實可以擁有增強外部量子效率的優點,降低發光二極體大型化後面臨到電流壅塞的問題和3-dB頻寬的衰減,雖然串接式發光二極體驅動電壓相對線性地增加,但我們可以將元件運用在特殊操作電壓的系統上,像是車用電力系統方面等。


    We demonstrate a linear cascade GaN based Light Emitting Diode (LED) arrays at a wavelength around ~520nm for improving the output power and differential efficiency of a single LED. Arrays with up to four LEDs connected in series, we can achieve four times improvement of output power under the same bias current (differential quantum efficiency) compared with the control, which is a single LED.
    We have also measured their modulation-speed performance and both devices show similar 3-dB bandwidth (90MHz) under the same bias currents. The measurement results indicate that the cascade connection has the advantages of greatly enhanced external differential efficiency and the ability to be driven by the constant-voltage power supply directly. The current crowding problem and degradation of RC-limited bandwidth in large active area LED can also be minimized through the use of such connection.

    摘要 i Abstract ii 致謝 iii 目錄 v 圖表目錄 vii 第一章 導論 1 §1-1 發光二極體之簡介 1 §1-2 發光二極體在車上的應用 3 §1-3 塑膠光纖之發展趨勢與其應用 5 §1-4 塑膠光纖損耗及光源 9 §1-5 研究動機和論文架構 11 第二章 串接式氮化鎵發光二極體之分析 12 §2-1 氮化鎵發光二極體電流壅塞效應 12 §2-2 發光二極體調制速度之限制 16 §2-3 發光二極體對於車用特殊電壓所面臨問題 17 §2-4 串接式發光二極體 18 第三章 串接式氮化鎵發光二極體元件結構及製程 19 §3-1串接式氮化鎵發光二極體元件結構 19 §3-2串接式氮化鎵發光二極體製作流程 20 第四章 串接式氮化鎵發光二極體量測結果與討論 27 §4-1.串接式氮化鎵發光二極體之電特性量測 27 §4-2.串接式氮化鎵發光二極體之光特性量測 28 §4-3.串接式氮化鎵發光二極體調變速度之量測 32 第五章 結論 35 參考文獻 36

    [1] Kevin Linthicum, Thomas Gehrke, Darren Thomson, Eric Carlson, Pradeep
    Rajagopal, Tim Smith, Dale Batchelor, and Robert Davis, Appl. Phys. Lett.75
    ,196(1999)
    [2] T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 84, 855(2004)
    [3] Chul Huh, Kug-Seung Lee, Eun-Jeong Kang, and Seong-Ju Park, J. Appl. Phys. 93, 9383(2003)
    [4] J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y-C, Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Gotz, N. F. Garder, R. S. Kern, and S. A. Stockman, Appl. Phys. Lett. 78, 3379(2001)
    [5] M. Koike, N. Koide, S. Asami, J. Umezaki, S. Nagai, S.Yamasaki, N. Shibata, H. Amano, and I. Akasaki, in Proc. SPIE International Society for Optical Engineering, vol.3002, pp.36-39(1997)
    [6] Sung-Pyo Jung, Chien-Hung Lin, Hon Man Chan, Zhiyong Fan, J. Grace Lu,
    and Henry P. Lee, phys. stat. sol. (a)201, no.12, 2827-2830(2004)
    [7] D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, IEEE Photon. Technol. Lett. , vol. 17, no. 2, Feb. 2005
    [8] LEDs in Automotive Lighting, Proc.of SPIE Vol.6134 613405-1
    [9] Steele, Robert “High bandwidths for plastic optical fiber”, Laser Focus World,pp.32-34,January 1995.
    [10] H.Schopp:”Principles and Applications of the MOST Network” , Meeting of the ITG-Fokusprojektes ITF , Fraukfurt, May11,2001.
    [11] Club des Fibres Optiques Plastiques (CFOP)France:”Plastic Optical Fibres-Practical Application”,edited by J.Marcou,John Wiley & Sons,Masson,1997.
    [12] O.Ziemann,H.Steinberg,P.E.Zamzow:”NewTechnologies with POF for Automotive and Building application”,Alcatel Kabel , autoelectric GmbH , May 2000.
    [13] T. Yoshimura, and Y Koyamada. "Analysis of Transmission Bandwidth characteristicsof SI-POF." POF-2003 proceedings. P 119, September 15-17,2003 in Seattle.Available from Information Gatekeepers, Inc.
    [14]L. Blyler, V.R. White, R. Ratagini, and M. Park. "Perfluorinated POF: out of the lab, into the real world." POF-2003 proceedings. P 16, September 15-17,2003 in Seattle.
    [15] Hyunsoo Kim, Ji-Myon Lee, Chul Huh, Sang-Woo Kim, Dong-Joon Kim, Seong-Ju Park, and Hyunsang Hwang, Appl. Phys. Lett. 77,1903(2000)
    [16] Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang, Appl. Phys. Lett. 81, 1326(2002)
    [17] X. Guo and E. F. Schubert, J. Appl. Phys. 90, 4191(2001)
    [18] E. F. Schubert, “LIGHT-EMITTING DIODE”, CAMBRIDGE UNIVERSITY PRESS
    [19] S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole Compensation Mechanism of P-Type GaN Films”,Jpn. J. Appl. Phys. 31,1258 (1992).
    [20] M. S. Minsky, M. White, and E. L. Hu,“Room-temperature photoenhanced wet etching of GaN”,Appl. Phys. Lett. 68, 1531 (1996).
    [21] C. Youtsey , I. Adesida , L. T. Romano and G. Bulman, “Smooth n-type GaN surfaces by photoenhanced wet etching”,Appl. Phys. Lett. 72, 560 (1997).
    [22] J. K. Sheu , Y. K. Su ,G. C. Chi ,W. C. Chen, C. Y. Chen, C. N. Huang,J. M. Hong,Y. C. Yu, C. W. Wang, and E. K. Lin,“The effect of thermal annealing on the Ni/Au contact of p-type GaN”, J. Appl. Phys. 83, 3172 (1998).
    [23] Li-Chien Chen, Fu-Rong Chen, Ji-Jung Kai,Li Chang,Jin-Kuo Ho, Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen, and Kwang-Kuo Shih,“Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN ”, J. Appl. Phys. 86, 3826 (1999).
    [24] Jin-Kuo Ho , Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen, and Kwang-Kuo Shih, “Low-resistance ohmic contacts to p-type GaN”, Appl. Phys. Lett. 74, 1275 (1999).
    [25] Y. Koide,S. Yamasaki, S. Nagai, J. Umezaki, M. Koike and Masanori Murakami,“Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces”, J. Appl. Phys. 81, 1315 (1997).
    [26] J. T. Getty, L. A. Johansson, E. J. Skogen, and L. A. Coldren, “1.55μm bipolar cascade segmented ridge lasers,” IEEE J. Sel. Top. Quantum Electron., vol. 9, no. 5, pp. 1138-1145, Sept./Oct. 2003.
    [27] P. Modh, S. Galt, J. Gustavsson, S. Jacobsson, and A. Larsson, “Linear Cascade VCSEL Arrays With High Differential Efficiency and Low Differential Resistance,” IEEE Photon. Technol. Lett., vol. 18, pp. 283-285, Jan., 2006.
    [28] D. A. Meller, D. S. Chemla, T. C. Damen, A. C. Gross,W.Wiegmann, T.
    H. Wood, and C. A. Burrus, “Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect,” Phys. Rev. Lett., vol. 53, pp. 2173–2176, 1984.
    [29] D. A. B. Miller, D. S. Chemla, and S. Schmitt-Rink, “Relation between
    electroabsorption in bulk semiconductors and in quantum wells: The
    quantum-confined Franz-Keldysh effect,” Phys. Rev. B, vol. 33, pp.6976–6982, 1986.
    [30] Y. P. Varshni, Physica 34, 149(1967)
    [31] Shih-Chang Shei, Jinn-Kong Sheu and Chien-Fu Shen, “Improved power efficiency of LED with cascaded configuration”, submitted
    [32] J.-W. Shi, H.-Y. Huang, J.-K. Sheu, C.-H. Chen, Y.-S. Wu, and W.-C. Lai, “The improvement in Modulation Speed of GaN-Based Light-Emitting Diode (LED) by Use of n-Type Barrier Doping for Plastic Optical Fiber (POF) Communication,” IEEE Photon. Technol. Lett., vol. 18, pp. 1636-1638, Aug., 2006.

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