本論文成功地驗證室溫操作之電激發光子晶體結構應用於砷化銦量子點發光二極體。電激發結構應用在光子晶體微共振腔因阻值造成電流注入效益不佳以及聚積在微共振腔內部的潛熱問題，使得僅有極少數的研究成功論證。其中最具代表性的電激發技術為控制蝕刻預留腔體底部的柱子，藉此提供唯一電流路徑與改善潛熱問題。但此技術必須應用於大面積六角對稱光子晶體結構，避免腔體底部的柱子產生劇烈破壞品質因子等缺點。因此，我們的電激發結構設計引入重離子佈植法定義橫向電流流動的路徑以取代腔體底部柱子的必要性。藉此，我們所設計的電激發結構可廣泛應用於各式樣的光子晶體微共振腔，尤其是至今已證明具有高品質因子與低模態體積的Quasi-L2腔體、Point-shift腔體、以及L3腔體等。具備高Purcell因子的共振腔體是達成高效率單光子源必備的因素。本論文所設計的電激發結構可應用於高品質因子與低模態體積的共振腔體，將成為電激發光子晶體高效率單光子源的先驅。
本論文將所設計之電激發製程技術應用於Quasi-L2腔體，此 Quasi-L2腔體之品質因子可達 1600，其低模態體積可低至 0.019 um3，極有利於電激發光子晶體高效率單光子源之實現。

We demonstrate an electrically driven InAs quantum dots (QDs) photonic crystal (PC) light emitting diode at room temperature. Previously, electrically driven PC optical cavities were realized by a post under the center of a PC cavity. The post provides a path for both current flow and heat dissipation. However, this type of device is only suitable for large-area and hexagonal- symmetric PC cavities because of the constraint of chemical etching process. In addition, the presence of the post degrades the field distribution and thus the quality factor of the cavity. Therefore, whisper-gallery-mode-like cavity structures become necessary. On the other hand, cavities with high quality factor, such as L3 cavities, or extremely low mode-volume, such as qL2 cavities, are excellent candidates for quantum electrodynamics physics and devices, but difficult to be processed by the same approach. In this study, the current conduction is defined by ion-implantation on a qL2 cavity. Quality factors as high as 1600 are achieved. The mode-volume of the qL2 cavity is calculated to be 0.019 um3. The Purcell factor is estimated to be approximately 400. This is a major step toward high-efficiency electrically driven single photon sources.

[1] E. Yablonovitch, “Inhibited Spontaneous Emission in Solid-State Physics and Electronics”, Phy. Rev. Lett., 58, 2059(1987)
[2] S.John, “Strong localization of photons in certain disordered dielectric superlattices”, Phy. Rev. Lett., 58, 2486(1987)
[3] E. Yablonovitch, “Photonic crystals: semiconductor of light”, Scientific American
December,47(2001)
[4] E. Yablonovitch, et al. “Photonic band structure: The face-centered-cubic case employing nonspherical atoms”, Phys. Rev. Lett., 67, 2295(1991)
[5] Masayuki, et al. “Simultaneous Inhibition and Redistribution of Spontaneous Light Emission in Photonic Crystal”, Science, 308, 1296 (2005)
[6] S. Laurent, et al. “Indistinguishable single photons from a single-quantum dot in a two-dimensional photonic crystal cavity”, Appl. Phys. Letters, 87, 163107 (2001)
[7] O. Painter, et al. “Two-Dimensional Photonic Band-Gap Defect Mode Laser”, Science,
284, 1819(1999)
[8] Susumu Noda, et al. “Trapping and emission of photons by a single defect in a photonic bandgap structure”, Nature, 407, 608(2003)
[9] Hong-Gyu Park, et al. “Nondegenerate monopole-mode two-dimensional photonic band
gap laser”, Appl. Phys. Letters, 79, 3032 (2001)
[10] Yoshihiro Akahane, et al. “High-Q photonic nanocavity in a two dimensional photonic crystal”, Nature, 425, 944(2003)
[11] K. Noazki, et al. “Laser characteristics with ultimate-small modal volume in photonic crystal salb point-shift nanolasers”, Appl. Phys. Letters, 88, 211101 (2006)
[12] Y. C. Tseng, et al. “Quasi-H1 Photonic Crystal Micro-cavities with an Extremely Low
Mode-volume for 1.3 ?m InAs QD Single Photon Sources”, The 5th International conference on semiconductor Quantum Dots, (2008).
[13] E. M. Purcell, “Spontaneous Emission Probabilities at Ratio Frequency”, Phys. Rev., 69,
681 (1946)
[14] W. Y. Chen, et al. “Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature”, Appl. Phys. Letters, 87, 071111 (2005)
[15] L. Balet, et al. “ Enhanced spontaneous emission rate from single InAs quantum dots in a photonic crystal nanocavity at telecom wavelengths”, Appl. Phys. Letters, 91,123115 (2007)
[16] Y. H. Lee, et al. “Electrically Driven Single-Cell Photonic Crystal Laser”, Science, 305, 1444 (2004)
[17] P. Bhattacharya, et al. “Characteristics of a Photonic Bandgap Single Defect Micro cavity Electroluminescent Device”, IEEE., 2, 25 (2001)
[18] J. M. Dallesasse, et al. “Hydrolyzation oxidation of AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices”, Appl. Phys. Letters, 57, 2844–2846 (1990)
[19] A.N.M Masum Choudhury, et al. “ Formation of p-type GaAs layers using Mg+ implantation and capless rapid thermal annealing”, Appl. Phys. Letters, 49, 26 (1986)
[20] Hajime Yamazaki, et al. “ Electrical and optical properties of oxygen-ion hot-implanted GaAs layers”, Appl. Phys. Letters, 64, 19 (1994)
[21] J. F. Ziegler, SRIM2003.17. http://www.srim.org/, (2003)
[22] Ralph Williams, et al. “ Modern GaAs Processing Methods, Artech House”, Boston London, pp.235 (1990)
[23] Y. Arakawa, et al. “ Multidimensional quantum well laser and temperature dependence of its threshold current”, Appl. Phys. Letters, 40, 939(1982)
[24] Gyoungwon Park, et al. “Room-temperature continuous-wave operation of a single layered 1.3 mm quantum dot laser”, Appl. Phys. Letters, 75, 21(1982)
[25] P. Gallo, et al. “Integration of site-controlled pyramidal quantum dots and photonic crystal membrane cavities”, Appl. Phys. Letters, 92, 263101(1982)