錫摻雜之高錳矽化物之製備與熱電性質分析｜國立中央大學博碩士論文系統

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研究生：	洪煜柔 Yu-Jou Hung
論文名稱：	錫摻雜之高錳矽化物之製備與熱電性質分析 Preparation and Analysis of Thermoelectric Properties of Sn-Doped High Manganese Silicide
指導教授：	李勝偉洪健龍
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學與工程研究所 Graduate Institute of Materials Science & Engineering
論文出版年：	2017
畢業學年度：	105
語文別：	中文
論文頁數：	66
中文關鍵詞：	高錳矽化物、熱電性質、錫、不匹配相
外文關鍵詞：	Higher manganese silicide, Thermoelectric properties, Tin, Incommensurate phase
相關次數：	點閱：12 下載：0
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高錳矽化物(HMS)是極具潛力發展為中溫型發電之P型熱電材料。高錳矽化物為一種不匹配相(Incommensurate phase)，目前發現的有四種高錳矽化物之相，分別為Mn4Si7、Mn11Si19、Mn15Si26與Mn27Si47，這四種相皆為螺旋階梯狀排列的晶體結構。
高錳矽化物之熱電性質通常會藉由摻雜或固溶其他元素改善。本研究採用錫摻雜至高錳矽化物中，使用電弧熔煉與火花電漿燒結的方式，製備多晶摻雜錫之高錳矽化物塊材，並且研究其相組成與微結構。我們選用的錫摻雜比例為0.1at%、0.5at%、1at%和1.5at%。之後對經火花電漿燒結的高錳矽化物塊材進行熱電性質量測，量測的溫度範圍介於323K~773K之間；發現在摻雜量為0.1at%的時候，會有最低的晶格導熱率，並且有最高的ZT值。

Higher manganese silicide (HMS) is considered to be a promising p-type thermoelectric material for use in intermediate-temperature power generation. It is well known that HMS exist as several incommensurable phases such as Mn4Si7, Mn11Si19, Mn15Si26, Mn27Si47, and all of these compounds are Nowotny chimney phases exhibiting tetragonal crystal structure.

Thermoelectric performance is improved through compositional optimization by doping or substitution. In this work, we prepared polycrytstalline HMS with Sn additions by arc melting and subsequent spark plasma sintering (SPS). The phases, composition, and microstructures of the Sn-doped polycrystalline HMS bulk were investigated. In this study, we select doped-Sn ratio of 0.1at%, 0.5 at%, 1 at%, and 1.5at%. After SPS, we measured the thermoelectric properties of sintered bulk sample from 323K to 773K. We found that the thermal conductivity was significantly improved when the Sn was 0.1at%. The HMS with Sn has the best the ZT is 0.1at%.

中文摘要      i
Abstract       ii  
致謝          iii
目錄          iv
圖目錄        vi
表目錄        vii
第一章、緒論   1
  1-1 前言            1
  1-2 研究目的       2
第二章、文獻回顧   5
  2-1 熱電效應概述       5
    2-1-1 Seebeck 效應       6
    2-1-2 Peltier 效應          7
    2-1-3 Thomson 效應      8
  2-2 導電率     9
  2-3 熱傳導率          10
  2-4 Wiedemann-Franz 定律      11
  2-5 熱電優值      12
  2-6 高錳矽化物(Higher manganese silicide)簡介       12
    2-6-1 高錳矽化物晶體結構         13
    2-6-2 高錳矽化物特性       14
2-7 高錳矽化物之熱電性質改良      15
第三章、實驗方法與實驗設備        21
  3-1 高錳矽化物塊材製備      21
    3-1-1 起始原料       21
    3-1-2 電弧熔煉(Arc melting)        21
    3-1-3 研磨與過篩       22
    3-1-4 火花電漿燒結成型(Spark plasma sintering)      23
  3-2 材料結構分析      24
    3-2-1 X光繞射分析(XRD)        24
    3-2-2 掃描式電子顯微鏡分析(SEM)       24
    3-2-3 穿透式電子顯微鏡分析(TEM)        25
  3-3 材料熱電性質分析      26
    3-3-1 試片製備       26
    3-3-2 席貝克係數與導電率量測      26 
      3-3-2-1 熱電性席貝克係數與半導體化合物材料導電率變溫量測系統(ZEM 3)   26
      3-3-2-2 霍爾效應量測      27
    3-3-3 熱傳導率量測         27
      3-3-3-1 高溫示差掃描熱分析儀(DSC)     27
      3-3-3-2 雷射閃光法熱傳導分析儀 (LFA)       28
      3-3-3-3 阿基米德法(Archimedes method)        29
第四章、實驗結果與討論        34
  4-1材料基本性質分析       34     4-1-1 XRD分析   34
    4-1-2 SEM分析      35
    4-1-3 TEM分析      36
  4-2 熱電性質分析      37
    4-2-1 導電率       37
    4-2-2 Seebeck係數      39
    4-2-3 導熱率       39
    4-2-4 ZT值        40
第五章、結論        50
參考文獻          51

                                

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