本論文首先介紹HEMT的工作原理，以此為基礎設計我們的氮化鋁鎵/氮化鎵高電子移導率場效電晶體。在元件的歐姆接觸方面，我們參考歐姆接觸的原理，利用傳輸線模型以Ti/Al/Ni/Au (25/125/45/55 nm)的蒸鍍厚度、800℃－30秒鐘的熱退火條件，製作出阻抗為0.4 Ω-mm的歐姆接觸。元件製作完成之後，我們對氮化鋁鎵/氮化鎵高電子移導率場效電晶體作直流、小訊號、功率量測，元件特性汲最大飽和電流為900 mA/mm、最大轉導為196 mS/mm、增益截止頻率為37 GHz、功率增益截止頻率為45 GHz，其它功率上特性如功率增益為14.6 dB、最大輸出功率為25 dBm。在脈衝電流－電壓量測方面，我們結合低溫量測系統量測出元件在100K、200K、300K的電流－電壓特性，並分析元件的熱效應與表面缺陷。

[1] S. Nakamura and G. Fasol, “The Blue Laser Diode”, Springer, Heidelberg, 1997.
[2] S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, “InGaN-based multi-quantum-well-structure laser diodes”, J. Appl. Phys., Vol.35, pp.74, 1996.
[3] T. Mukai, H. Narimatsu, and S. Nakamura, “Amber InGaN based light emitting diodes operable at high ambient temperature”, J. Appl. Phys., Vol. 37, pp.479-481, 1998.
[4] S. Nakamura, T. Mukai ,and M. Senoh, “High power GaN P-N junction blue light emitting diodes”, J. Appl. Phys., Vol.30, pp.1998, 1991.
[5] S. Nakamura, T. Mukai ,and M. Senoh, “Candela classhigh brightness InGaN/AlGaN double heterostructure blue light emitting diodes”, Appl. Phys. Lett., Vol.64, pp.1687, 1994.
[6] M. A. Khan, J. N. Kuznia, A. R. Bhattarai, and D. T. Oslon, “Metal semiconductor field effect transistor based on single crystal GaN”, Appl. Phys. Lett., Vol.62, pp.1786, 1993.
[7] L. F. Eastman, V. Tilak, J. Smart, B. M. Green, and J. R. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplifiers”, IEEE Trans. Electron Devices, Vol.48, No.3, pp.479, 2001.
[8] V. Kumar, W. Lu, F.A. Khan, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, and I. Adesida, “High performance 0.25 mm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm”, Electronics Lett., Vol.38, pp.252, 2002.
[9] M. A. Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, “High electron mobility transistor based on a GaN-AlxGa1-xN heterojunction”, Appl. Phys. Lett., Vol.63, pp.1214, 1993.
[10] S. J. Cai, R. Li, Y. L. Chen, L. Wong, W. G. Wu, S. G. Thomas ,and K. L. Wang, “High performance AlGaN/GaN HEMT with improved ohmic contact”, Electronics Lett., Vol.34, pp.2354, 1998.
[11] J. M. Barker, D. K. Ferry, S. M. Goodnick, D. D. Doleske, A. Allerman, and R. J. Shul, “Effects of surface treatment on the velocity-field characteristics of AlGaN/GaN heterostructures”, Semicond. Sci. Tech. 19, pp.478-480, 2004.
[12] A. E. Wickenden, D. D. Koleske, R. L. Henry, R. J. Gorman, M. E. Twigg, M. Fatemi, J. A. Freitas, Jr., and W. J. Moore, “The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys”, J. Electronic Materials, Vol. 29, No.1, 2000.
[13] M. A. Khan, and M. S. Shur, “GaN-Based Devices for Electronic Applications”, Vol.33, 2004.
[14] O. Ambacher, J. Smart, J. R. Shealy, and M. Murphy , “Two-dimentional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures”, J. Appl. Phys., Vol.85, No.6, pp.3222, 1999.
[15] R.Dimitrov et al.,“Two-dimentional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam exitaxy and Metalorganic chemical vapor deposition on sapphire”, J. Appl. Phys., Vol.87, No.7, pp.3375, 2000.
[16] O.Ambacher, B. Foutz, J. Smart, and M. Stutzmann, “Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures”, J. Appl. Phys., Vol.87, No.1, pp.334, 2000.
[17] I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, and U. K. Mishra, “Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam expitaxy”, J. Appl. Phys., Vol.86, No.8, pp.4520, 1999.
[18] M.S. Shur and M.A. Kahn, “Wide Band Gap Semiconductors. Good Results and Great Expections”, in the Proceedings of 23d International Symposium on GaAs and Related Compounds, St. Petersburg, Russia, Sep. 22-28, 1996, Institute Phys. Conferrence Series, No.155, Chapter 2, pp. 25-32, M.S. Shur and R. Suris, Editors, IOP Publishing, London 1997.
[19] F. A. Ponce, “Group III Nitride Semiconductor Compounds Physics and Applications”, pp.123-133, 1998.
[20] H. Morkoc, “GaN-based modulation doped FETs and UV detectors”, Solid State Electron, Vol.46, pp.157-202, 2002.
[21] T. C. Shen, G. B. Gao, and H. Morkoc, “Recent Developments in Ohmic Contacts to III-V Compound Semiconductors”, J. Vac. Sci. Tech., B10, pp.2113, 1992.
[22] D. K. Schroder, “Semiconductor material and device characterization”, Wiley Interscience, p.169-208, pp.133, 1998.
[23] R. E. Williams, “Galliun Arsenide processing Techniques”, chapter 11, pp.225-253.
[24] Z. Fan, S. N. Mohammad, W. Kim, O. Aktas, A. E. Botchkarev, and H. Morkoc, “Microstructure of Ti/Al and Ti/Al/Ni/Au ohmic contacts for n-GaN”, Appl. Phys. Lett., Vol.68, pp.1672, 1996.
[25] 李嗣涔, 管傑雄, 孫台平, 半導體元件物理, 三民書局, pp.61, 1995
[26] P. E. Riley, S. S. Peng, L. Fang, “Plasma etching of Aluminum for ULSI circuits”, Solid State Tech., pp.47, 1993.
[27] S. K. Ghandhi, “VLSI Fabrication Principles”, pp.635, 1994.
[28] M. E. Lin, Z. F. Fan, Z. Ma, L. H. Allen, and H. Morkoc, “Reactive ion etching of GaN using BCl3”, Appl. Phys. Lett., Vol.64, No.7, 1994.
[29] G. F. McLane and L. Casas, “High etch of GaN with magnetron reactive ion etching in BCl3 plasmas”, Appl. Phys. Lett., Vol.66, No.44, pp.332, 1995.
[30] D. Basak, T. Nakanishi, S. Sakai, “Reactive ion etching of GaN using BCl3 , BCl3/Arand BCl3 / N2 gas plasmas”, Solid State Electronics, Vol.44, pp.725-728, 2000.