本研究以TFT-LCD業未混雜到其他溶劑，且經過旋轉塗佈製程後，被甩離玻璃基板之剩餘正型光阻劑為研究對象；利用冷風濃縮設備之冷熱排溫度差特性，先以光阻稀釋劑進行冷風濃縮設備較佳操作條件之測試，再將此條件運用於光阻劑廢液再生過程之濃縮步驟，並探討冷風濃縮設備操作條件對於光阻稀釋劑及光阻劑廢液之冷風濃縮效率；進一步透過膜厚預測方程式之運用，預先推測實際塗佈後之膜厚，再與實際塗佈後之膜厚進行比較，完成光阻劑廢液進行重複再生之可行性研究。
以光阻稀釋劑測試冷風濃縮設備之結果顯示，冷風濃縮設備操作條件，熱排溫度30℃、冷排溫度-10℃、氣體風量5.09m/s及液體流量2.0L/min時，有較佳之冷風濃縮效率，達到73.6 %，實際運用於光阻劑廢液則有48.9%之效率。
本研究之塗佈膜厚預測方程式ln(THf) = 3.523 + 1.424 ln(S.C.) + 0.446 ln(μ)，測試經過9次重複回收之再生光阻劑，實際塗佈膜厚均低於允收標準之500 ?，且預測膜厚與實際塗佈膜厚，平均差異僅33?。
經由本研究之實驗結果顯示，超過保存期限20天，並且經過9次重複稀釋、濃縮及調配再生處理之光阻劑廢液，仍然能通過塗佈膜厚15000 ± 500 ?、均勻度< 2.5%及含水率< 2%之再生光阻劑允收標準。

According to 2006 TFT-LCD market data, the yearly consumption of positive photoresist was about 4,000 tons and that implied a market value of about NTD 2.9 billion for a single material. Considered the tremendous usage, the approximately 2% occupation of the total material cost in TFT-LCD manufacturing process and the waste positive photoresist which spun off from the glass substrate during the spin coating process was almost free of contamination while under clean room environment, a chilling concentration facility using temperature gradient of the hot/cold flow to reuse the positive photoresist was introduced. In the feasibility study on the repetitive reuse of waste positive photoresist, the optimal operation condition was set firstly by using photoresist thinner then applied to waste positive photoresist for solvent removing and dehydration. The chilling concentration efficiencies of the operation condition on photoresist thinner and waste positive photoresist were investigated. Furthermore, through the film thickness prediction equation, the predicted and actual coating thickness of the reuse positive photoresist was also compared.
It was found that the efficiency of the chilling concentration can reach 73.6% and actual efficiency of reuse of waste photoresistant is 48.9% when the operational temperature of hot flow is 30℃, cold flow is -10℃, air volume is 5.09m/s, and liquid flow is 2.0L/min.
It was also found that the actual thickness of the film after 9 photoresistant reuse tests which all less than 500 ? standardized thickness. And the difference of the thickness between the predicted by the formula ln(THf) = 3.523 + 1.424 ln(S.C.) + 0.446 ln(μ) and the actual thickness is only 33?.
Finally, the results of this study indicated that after 9 repetitive diluting, condensing and allotting processes and over expiration date for twenty days, the film thickness of the waste photoresistant may still pass the specifications.

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