石墨烯中與音頻 (acoustical)聲子相關的問題包括: 1)高溫和低溫狀態下的音頻聲子散射的不同特性，2)與摻雜濃度相關的布拉赫-格魯奈生(Bloch-Gruneisen)溫度，3)在Bloch-Gruneisen溫度之下，電子-平面聲子交互作用因受到聲子動量短缺的限制所產生的導電變化。在過去的十年中，第一和第二個問題吸引了許多理論和實驗研究，而第三個問題仍未有適當研究。值得一提的是，充分理解石墨烯中的這些問題不僅對於基礎理解很重要，而且對於設計石墨烯相關的元件如光學檢測器,輻射熱計，冷卻通道,和超碰撞等應用。
在這篇論文中，我們系統性的研究了這三個問題。關於第一個問題，我們嚴謹的推導了在任何有限溫度和摻雜下的非彈性和半彈性電子-聲子散射率。此推導證明了前人推導之高溫散射速率的正確性並校正了低溫散射率。另外在整個溫度範圍內，前人以經驗公式描述的散射率與我們的嚴謹理論所推導散射率相當接近,但是在低溫區域嚴重高估。作為測試平台，我們推導的散射率非常適合用來驗證文獻中的實驗數據。
對於第二個問題，我們發現前人討論的與摻雜相關的Bloch-Gruneisen溫度有許多待商榷之處。它們的值比正確值小了2到2.5倍。而且，我們推導出包含各種機制的總Bloch-Gruneisen溫度。使用我們的散射率來分析文獻中可用的實驗數據發現:用實驗數據推斷出的總Bloch-Gruneisen溫度與我們的理論預測值完全一致。此外，我們並指出了前人的理論和實驗工作的一些關鍵錯誤和不一致之處。我們的新結果質疑了許多前人有關石墨烯中摻雜相關的Bloch-Gruneisen溫度的理論研究。
最後，據我所知自1930年布拉赫（F. Bloch）和1933年E. Gruneisen的兩部作品以來，我們首次發現了在石墨烯中電子-聲子散射在Bloch-Grrneisen溫度下的確會受到聲子動量短缺的影響。在應用方面，我們用非彈性的散射率研究了在照光和不照光的情況下，p型石墨烯/ MoS2異質結構中在室溫(300 K)及柵極電壓下轉移電流的變化。

The in-plane acoustic phonon-related issues in graphene include the in-plane acoustic phonon
scatterings in the whole temperature range (from low- to high-temperature regime), the dopingdependent
Bloch-Grüneisen temperatures, and the effect of shortages of in-plane acoustic phonon
momenta to scatter off electrons at Bloch-Grüneisen temperatures. While the first and second
issues have been attracting a lot of theoretical and experimental researches during the last
decade, the third issue remains unexplored. It is worth mentioning that fully comprehending
these issues in graphene is not only important for fundamental understanding but also for designing
graphene-based devices such as optical detectors, bolometers, cooling pathways, and
supercollisions in graphene.
In this thesis, I systematically investigate the three issues in unprecedented details. Regarding
the first issue, the inelastic and semi-inelastic scattering rates at any finite temperature and
doping are derived rigorously, from which the high-temperature scattering rate is reproduced
and the low-temperature scattering rate is corrected. In addition, the ansatz scattering rate
manifests its asymptotic behavior to our scattering rates for the whole temperature range; especially,
the overestimation becomes greater in the low-temperature region. As a test bed, our
scattering rates well fit the available experimental data in the literature.
For the second issue, it turns out that the state-of-the-art definitions of the doping-dependent
Bloch-Grüneisen temperatures need to be revised. Their values should be about 2 􀀀 2.5 times
smaller. Moreover, the total doping-dependent Bloch-Grüneisen temperatures emerge. Using
our scattering rates to analyze the available experimental data in the literature, the experimentally
inferred values of the total doping-dependent Bloch-Grüneisen temperatures completely
agree with our theoretically predicted values. Additionally, critical mistakes and inconsistencies
in some theoretical and experimental works are also pointed out. Furthermore, our new
results question many theoretical researches of formulations relating to the doping-dependent
Bloch-Grüneisen temperatures in graphene.
Finally, the last but not the least, as far as I have known since the two works by F. Bloch in
1930 and E. Grüneisen in 1933, shortages of acoustic phonon momenta to scatter off electrons
at doping-dependent Bloch-Grüneisen temperatures are observed for the first time. As an application,
we have used our scattering rates to study transfer current in p-type graphene/MoS2
heterostructures under a wide range of applied gate voltage at 300 K without and with optical
pumping.

[1] J. M. Ziman. Electrons and Phonons: The Theory of Transport Phenomena in Solids. Oxford:
Oxford University Press, 1960.
[2] N. W. Ashcroft and N. D. Mermin. Solid State Physics. Philadelphia: Saunders College
Publishing, 1976.
[3] M. Lundstron. Fundamentals of Carrier Transport. Cambridge: Cambridge University Press,
2000.
[4] L. Pietronero et al. “Electrical conductivity of a graphite layer”. In: Phys. Rev. B 22 (1980),
p. 904.
[5] L. M. Woods and G. D. Mahan. “Electron-phonon effects in graphene and armchair
(10,10) single-wall carbon nanotubes”. In: Phys. Rev. B 61 (2000), p. 10651.
[6] H. Suzuura and T. Ando. “Screening effect and impurity scattering in monolayer graphene”.
In: J. Phys. Soc. Jpn. 75 (2006), p. 074716.
[7] T. Stauber, N. M. R. Peres, and F. Guinea. “Electronic transport in graphene: A semiclassical
approach including midgap states”. In: Phys. Rev. B 76 (2007), p. 205423.
[8] F. T. Vasko and V. Ryzhii. “Voltage and temperature dependencies of conductivity in
gated graphene”. In: Phys. Rev. B 76 (2007), p. 233404.
[9] E. H. Hwang and S. Das Sarma. “Acoustic phonon scattering limited carrier mobility in
two-dimensional extrinsic graphene”. In: Phys. Rev. B 77 (2008), p. 115449.
[10] K. I. Bolotin et al. “Temperature-dependent transport in suspended graphene”. In: Phys.
Rev. Lett. 101 (2008), p. 096802.
[11] J.-H. Chen et al. “Intrinsic and extrinsic performance limits of graphene devices on
SiO2”. In: Nature Nanotech. 3 (2008), p. 206.
[12] Eros Mariani and Felix von Oppen. “Flexural phonons in free-standing graphene”. In:
Phys. Rev. Lett. 100 (2008), p. 076801.
[13] S. V. Morozov et al. “Giant intrinsic carrier mobilities in graphene and its bilayer”. In:
Phys. Rev. Lett. 100 (2008), p. 016602.
[14] Dmitri K. Efetov and Philip Kim. “Controlling electron-phonon interactions in graphene
at ultrahigh carrier densities”. In: Phys. Rev. Lett. 105 (2010), p. 256805.
[15] Eduardo V. Castro et al. “Limits on charge carrier mobility in suspended graphene due
to flexural phonons”. In: Phys. Rev. Lett. 105 (2010), p. 266601.
[16] K. M. Borysenko et al. “First-principles analysis of electron-phonon interactions in graphene”.
In: Phys. Rev. B 81 (2010), 121412(R).
[17] Vasili Perebeinos and Phaedon Avouris. “Inelastic scattering and current saturation in
graphene”. In: Phys. Rev. B 81 (2010), p. 195442.
[18] A. A. Kozikov et al. “Electron-electron interactions in the conductivity of graphene”. In:
Phys. Rev. B 82 (2010), p. 075424.
[19] K. Zou et al. “Deposition of high-quality HfO2 on graphene and the effect of remote
oxide phonon scattering”. In: Phys. Rev. Lett. 105 (2010), p. 126601.
[20] J. K. Viljas and T. T. Heikkila. “Electron-phonon heat transfer in monolayer and bilayer
graphene”. In: Phys. Rev. B 81 (2010), p. 245404.
[21] Eros Mariani and Felix von Oppen. “Temperature-dependent resistivity of suspended
graphene”. In: Phys. Rev. B 82 (2010), p. 195403.
[22] Aniruddha Konar, Tian Fang, and Debdeep Jena. “Effect of high-k gate dielectrics on
charge transport in graphene-based field effect transistors”. In: Phys. Rev. B 82 (2010),
p. 115452.
[23] X. Li et al. “Surface polar phonon dominated electron transport in graphene”. In: Appl.
Phys. Lett. 97 (2010), p. 232105.
[24] C. R. Dean et al. “Boron nitride substrates for high-quality graphene electronics”. In:
Nature Nanotech. 5 (2010), p. 722.
[25] Hongki Min, E. H. Hwang, and S. Das Sarma. “Chirality-dependent phonon-limited
resistivity in multiple layers of graphene”. In: Phys. Rev. B 83 (2011), 161404(R).
[26] S. Das Sarma et al. “Electronic transport in two-dimensional graphene”. In: Rev. Mod.
Phys. 83 (2011), p. 407.
[27] D. R. Cooper et al. “Experimental review of graphene”. In: ISRN Condens. Matter Phys.
2012 (2012), p. 1.
[28] Kristen Kaasbjerg, Kristian S. Thygesen, and KarstenW. Jacobsen. “Unraveling the acoustic
electron-phonon interaction in graphene”. In: Phys. Rev. B 85 (2012), p. 165440.
[29] H. Ochoa et al. “Scattering by flexural phonons in suspended graphene under back gate
induced strain”. In: Physica E 44 (2012), p. 963.
[30] Cheol-Hwan Park et al. “Electron-phonon interactions and the intrinsic electrical resistivity
of graphene”. In: Nano Lett. 14 (2014), p. 1113.
[31] Zhenzhu Li, Jinying Wang, and Zhirong Liu. “Intrinsic carrier mobility of Dirac cones:
The limitations of deformation potential theory”. In: J. Chem. Phys. 141 (2014), p. 144107.
[32] Thibault Sohier et al. “Phonon-limited resistivity of graphene by first-principles calculations:
Electron-phonon interactions, strain-induced gauge field, and Boltzmann equation”.
In: Phys. Rev. B 90 (2014), p. 125414.
[33] Andrew Lucas et al. “Transport in inhomogeneous quantum critical fluids and in the
Dirac fluid in graphene”. In: Phys. Rev. B 93 (2016), p. 075426.
[34] Y. G. You et al. “Role of remote interfacial phonons in the resistivity of graphene”. In:
Appl. Phys. Lett. 115 (2019), p. 043104.
[35] H. N. Spector. “AmplifIcation of acoustic waves through interaction with conduction
electrons”. In: Phys. Rev. 127 (1962), p. 1084.
[36] A. B. Pippard. “Acoustic amplification in semiconductors and metals”. In: Philos. Mag.
8 (1963), p. 161.
[37] O. A. C. Nunes and A. L. A. Fonseca. “Amplification of hippersound in graphene under
external direct current electric field”. In: J. Appl. Phys. 112 (2012), p. 043707.
[38] C. X. Zhao,W. Xu, and F. M. Peeters. “Cerenkov emission of terahertz acoustic-phonons
from graphene”. In: Appl. Phys. Lett. 102 (2013), p. 222101.
[39] T. I. Andersen et al. “Electron-phonon instability in graphene revealed by global and
local noise probes”. In: Science 364 (2019), p. 154.
[40] M. T. Greenaway et al. “Magnetophonon spectroscopy of Dirac Fermion scattering by
transverse and longitudinal acoustic phonons in graphene”. In: Phys. Rev. B 100 (2019),
p. 155120.
[41] P. Kumaravadivel et al. “Strong magnetophonon oscillations in extra-large graphene”.
In: Nat. Commun. 10 (2019), p. 3334.
[42] M. S. Fuhrer. “Textbook physics from a cutting-edge material”. In: Physics 3 (2010),
p. 106.
[43] Khoe Van Nguyen and Yia-Chung Chang. “Full consideration of acoustic phonon scatterings
in two-dimensional Dirac materials”. In: Phys. Chem. Chem. Phys. 22 (2020), p. 3999.
[44] Khoe Van Nguyen and Yia-Chung Chang. “Doping-dependent Bloch-Grüneisen temperatures
in graphene”. 2020.
[45] Khoe Van Nguyen and Yia-Chung Chang. “Observation of shortages of acoustic phonon
momenta to scatter off electrons at doping-dependent Bloch-Grüneisen temperatures in
graphene”. 2020.
[46] Khoe Van Nguyen, Shih-Yen Lin, and Yia-Chung Chang. “Transfer current in p-type
graphene/MoS2 heterostructures”. 2020.
[47] Y.-W. Tan et al. “Temperature dependent electron transport in graphene”. In: Eur. Phys.
J. Spec. Top. 148 (2007), p. 15.
[48] Ashley M. DaSilva et al. “Mechanism for Current Saturation and Energy Dissipation in
Graphene Transistors”. In: Phys. Rev. Lett. 104 (2010), p. 236601.
[49] A. Matthiessen and C. Vogt. “On the influence of temperature on the electric conductingpower
of alloys”. In: Phil. Trans. R. Soc. Lond. 154 (1864), p. 167.
[50] Valeri N. Kotov et al. “Electron-electron interactions in graphene: Current status and
perspectives”. In: Rev. Mod. Phys. 84 (2012), p. 1067.
[51] Hidekatsu Suzuura and Tsuneya Ando. “Phonons and electron-phonon scattering in
carbon nanotubes”. In: Phys. Rev. B 65 (2002), p. 235412.
[52] E. Kogan et al. “Energy bands in graphene: Comparison between the tight-binding
model and ab initio calculations”. In: Phys. Rev. B 89 (2014), p. 165430.
[53] Y.-W. Tan et al. “Measurement of scattering rate and minimum conductivity in graphene”.
In: Phys. Rev. Lett. 99 (2007), p. 246803.
[54] S. Ono and K. Sugihara. “Theory of the transport properties in graphite”. In: J. Phys. Soc.
Jpn. 21 (1966), p. 861.
[55] Meng Sun et al. “Bogolon-mediated electron scattering in graphene in hybrid Bose-
Fermi systems”. In: Phys. Rev. B 99 (2019), p. 115408.
[56] F. Bloch. “Zum elektrischen Widerstandsgesetz bei tiefen Temperaturen”. In: Zeitschrift
fur Physik 59 (1930), p. 208.
[57] E. Grüneisen. “Die Abhängigkeit des elektrischen Widerstandes reiner Metalle von der
Temperatur”. In: Ann. Phys. (Leipzig) 16 (1933), p. 530.
[58] V. K. Tewary and B. Yang. “Singular behavior of the Debye-Waller factor of graphene”.
In: Phys. Rev. B 79 (2009), p. 125416.
[59] H. L. Stormer et al. “Observation of a Bloch-Grüneisen regime in two-dimensional electron
transport”. In: Phys. Rev. B 41 (1990), p. 1278.
[60] O. E. Raichev et al. “Bloch-Grüneisen nonlinearity of electron transport in GaAs/AlGaAs
heterostructures”. In: Phys. Rev. B 96 (2017), 081407(R).
[61] R. Bistritzer and A. H. MacDonald. “Electronic Cooling in Graphene”. In: Phys. Rev. Lett.
102 (2009), p. 206410.
[62] S. S. Kubakaddi. “Interaction of massless Dirac electrons with acoustic phonons in graphene
at low temperatures”. In: Phys. Rev. B 79 (2009), p. 075417.
[63] J. Yan et al. “Dual-gated bilayer graphene hot-electron bolometer”. In: Nature Nanotechnol.
7 (2012), p. 472.
[64] W. Chen and Aashish A. Clerk. “Electron-phonon mediated heat flow in disordered
graphene”. In: Phys. Rev. B 86 (2012), p. 125443.
[65] E. Munoz. “Phonon-limited transport coefficients in extrinsic graphene”. In: J. Phys.:
Condens. Matter 24 (2012), p. 195302.
[66] K. C. Fong and K. C. Schwab. “Ultrasensitive and Wide-Bandwidth Thermal Measurements
of Graphene at Low Temperatures”. In: Phys. Rev. X 2 (2012), p. 031006.
[67] R. Somphonsane et al. “Fast Energy Relaxation of Hot Carriers Near the Dirac Point of
Graphene”. In: Nano Lett. 13 (2013), p. 4305.
[68] K. C. Fong et al. “Measurement of the Electronic Thermal Conductance Channels and
Heat Capacity of Graphene at Low Temperature”. In: Phys. Rev. X 3 (2013), p. 041008.
[69] A. C. Betz et al. “Supercollision cooling in undoped graphene”. In: Nature Physics 9
(2013), p. 109.
[70] C. B. McKitterick, D. E. Prober, and M. J. Rooks. “Electron-phonon cooling in large
monolayer graphene devices”. In: Phys. Rev. B 93 (2016), p. 075410.
[71] V. Meunier et al. “Physical properties of low-dimensional sp2-based carbon nanostructures”.
In: Rev. Mod. Phys. 88 (2016), p. 025005.
[72] M. Ansari and S. S. Z. Ashraf. “Chirality effect on electron phonon relaxation, energy
loss, and thermopower in single and bilayer graphene in BG regime”. In: J. Appl. Phys.
122 (2017), p. 164302.
[73] L. Rani and N. Singh. “Dynamical electrical conductivity of graphene”. In: J. Phys.: Condens.
Matter 29 (2017), p. 255602.
[74] R. D’Souza and S. Mukherjee. “First-principles study of the electrical and lattice thermal
transport in monolayer and bilayer graphene”. In: Phys. Rev. B 95 (2017), p. 085435.
[75] T. Gunst, K. Kaasbjerg, and M. Brandbyge. “Flexural-Phonon Scattering Induced by
Electrostatic Gating in Graphene”. In: Phys. Rev. Lett. 118 (2017), p. 046601.
[76] M. Ansari and S. S. Z. Ashraf. “Electron single flexural phonon relaxation, energy loss
and thermopower in single and bilayer graphene in the Bloch-Grüneisen regime”. In: J.
Phys.: Condens. Matter 30 (2018), p. 485501.
[77] J. C. W. Song, M. Y. Reizer, and L. S. Levitov. “Disorder-Assisted Electron-Phonon Scattering
and Cooling Pathways in Graphene”. In: Phys. Rev. Lett. 109 (2012), p. 106602.
[78] Q. Ma et al. “Competing Channels for Hot-Electron Cooling in Graphene”. In: Phys. Rev.
Lett. 112 (2014), p. 247401.
[79] K. S. Tikhonov et al. “Resonant supercollisions and electron-phonon heat transfer in
graphene”. In: Phys. Rev. B 97 (2018), p. 085415.
[80] J. F. Kong et al. “Resonant electron-lattice cooling in graphene”. In: Phys. Rev. B 97 (2018),
p. 245416.
[81] K. S. Novoselov et al. “Electric Field Effect in Atomically Thin Carbon Films”. In: Science
306 (2004), p. 666.
[82] A. H. C. Neto et al. “The electronic properties of graphene”. In: Rev. Mod. Phys. 81 (2009),
p. 109.
[83] G. E. Jr. Jellison, J. D. Hunn, and H. N. Lee. “Measurement of optical functions of highly
oriented pyrolytic graphite in the visible”. In: Phys. Rev. B 76 (2007), p. 085125.
[84] R. R. Nair et al. “Fine Structure Constant Defines Visual Transparency of Graphene”. In:
Science 320 (2008), p. 1308.
[85] J. P. Reed et al. “The Effective Fine-Structure Constant of Freestanding Graphene Measured
in Graphite”. In: Science 330 (2010), p. 805.
[86] E. J. G. Santos and E. Kaxiras. “Electric-Field Dependence of the Effective Dielectric
Constant in Graphene”. In: Nano Lett. 13 (2013), p. 898.
[87] A. Sindona et al. “Calibration of the fine-structure constant of graphene by time-dependent
density-functional theory”. In: Phys. Rev. B 96 (2017), 201408(R).
[88] J. Fang, W. G. Vandenberghe, and M. V. Fischetti. “Microscopic dielectric permittivities
of graphene nanoribbons and graphene”. In: Phys. Rev. B 94 (2016), p. 045318.
[89] P. Kumar et al. “Thickness and Stacking Dependent Polarizability and Dielectric Constant
of Graphene–Hexagonal Boron Nitride Composite Stacks”. In: J. Phys. Chem. C 120
(2016), p. 17620.
[90] Y.-J. Yu et al. “Tuning the Graphene Work Function by Electric Field Effect”. In: Nano
Lett. 9 (2009), p. 3430.
[91] R. Yan et al. “Determination of graphene work function and graphene-insulator-semiconductor
band alignment by internal photoemission spectroscopy”. In: Appl. Phys. Lett. 101 (2012),
p. 022105.
[92] J. T. Seo et al. “Manipulation of graphene work function using a self-assembled monolayer”.
In: J. Appl. Phys. 116 (2014), p. 084312.
[93] Z. Deng, Z. Li, andW.Wang. “Electron affinity and ionization potential of two-dimensional
honeycomb sheets: A first principle study”. In: Chemical Physics Letters 637 (2015), p. 26.
[94] G. Giovannetti et al. “Doping Graphene with Metal Contacts”. In: Phys. Rev. Lett. 101
(2008), p. 026803.
[95] M. Vanin et al. “Graphene on metals: A van der Waals density functional study”. In:
Phys. Rev. B 81 (2010), 081408(R).
[96] Z. Klusek et al. “Graphene on gold: Electron density of states studies by scanning tunneling
spectroscopy”. In: Appl. Phys. Lett. 95 (2009), p. 113114.
[97] A. Matkovic et al. “Influence of a gold substrate on the optical properties of graphene”.
In: J. Appl. Phys. 117 (2015), p. 015305.
[98] W. Gao et al. “Interfacial adhesion between graphene and silicon dioxide by density
functional theory with van der Waals corrections”. In: J. Phys. D: Appl. Phys. 47 (2014),
p. 255301.
[99] L. G. Cancado et al. “Quantifying Defects in Graphene via Raman Spectroscopy at Different
Excitation Energies”. In: Nano Lett. 11 (2011), p. 3190.
[100] J. H. Zhong et al. “Quantitative Correlation between Defect Density and Heterogeneous
Electron Transfer Rate of Single Layer Graphene”. In: J. Am. Chem. Soc. 136 (2014),
p. 16609.
[101] Q. H. Wang et al. “Electronics and optoelectronics of two-dimensional transition metal
dichalcogenides”. In: Nature Nanotechnology 7 (2012), p. 699.
[102] C. Gong et al. “Band alignment of two-dimensional transition metal dichalcogenides:
Application in tunnel field effect transistors”. In: Appl. Phys. Lett. 103 (2013), p. 053513.
[103] J. Kang et al. “Band offsets and heterostructures of two-dimensional semiconductors”.
In: Appl. Phys. Lett. 102 (2013), p. 012111.
[104] S. McDonnell et al. “Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry
and Band Alignments”. In: ACS Nano 8 (2014), p. 6265.
[105] Y. Li et al. “Measurement of the optical dielectric function of monolayer transition-metal
dichalcogenides: MoS2, MoSe2, WS2, and WSe2”. In: Phys. Rev. B 90 (2014), p. 205422.
[106] A. Laturia, M. L. van de Put, and W. G. Vandenberghe. “Dielectric properties of hexagonal
boron nitride and transition metal dichalcogenides: from monolayer to bulk”. In:
NPJ 2D Materials and Applications 2 (2018), p. 6.
[107] E. J. G. Santos and E. Kaxiras. “Electrically Driven Tuning of the Dielectric Constant in
MoS2 Layers”. In: ACS Nano 7 (2013), p. 10741.
[108] A. Kormanyos et al. “Monolayer MoS2: Trigonal warping, the G valley, and spin-orbit
coupling effects”. In: Phys. Rev. B 88 (2013), p. 045416.
[109] Y. Li et al. “Work function modulation of bilayer MoS2 nanoflake by backgate electric
field effect”. In: Appl. Phys. Lett. 103 (2013), p. 033122.
[110] D. Liu et al. “Sulfur vacancies in monolayer MoS2 and its electrical contacts”. In: Appl.
Phys. Lett. 103 (2013), p. 183113.
[111] K. C. Santosh et al. “Impact of intrinsic atomic defects on the electronic structure of
MoS2 monolayers”. In: Nanotechnology 25 (2014), p. 375703.
[112] J. Hong et al. “Exploring atomic defects in molybdenum disulphide monolayers”. In:
Nature Communications 6 (2015), p. 6293.
[113] S. Salehi and A. Saffarzadeh. “Atomic defect states in monolayers of MoS2 and WS2”.
In: Surface Science 651 (2016), p. 215.
[114] Y. Han et al. “Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2
Heterostructures”. In: Adv. Mater. Interfaces 2 (2015), p. 1500064.
[115] W. J. Yu et al. “Highly efficient gate-tunable photocurrent generation in vertical heterostructures
of layered materials”. In: Nature Nanotech. 8 (2013), p. 952.
[116] K. Roy et al. “Optically active heterostructures of graphene and ultrathin MoS2”. In:
Solid State Commun. 175-176 (2013), p. 35.
[117] S. Larentis et al. “Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures”.
In: Nano Lett. 14 (2014), p. 2039.
[118] H. Tian et al. “Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2
Heterojunctions”. In: Sci. Rep. 4 (2014), p. 5951.
[119] M. Y. Lin et al. “Toward epitaxially grown two-dimensional crystal hetero-structures:
Single and double MoS2/graphene hetero-structures by chemical vapor depositions”.
In: Appl. Phys. Lett. 105 (2014), p. 073501.
[120] A. Ebnonnasir et al. “Tunable MoS2 bandgap in MoS2-graphene heterostructures”. In:
Appl. Phys. Lett. 105 (2014), p. 031603.
[121] W. Zhang et al. “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-
MoS2 Heterostructures”. In: Sci. Rep. 4 (2014), p. 3826.
[122] W. J. Yu et al. “Unusually efficient photocurrent extraction in monolayer van der Waals
heterostructure by tunnelling through discretized barriers”. In: Nature Communications
7 (2016), p. 13278.
[123] Y. Garcia-Basabe et al. “Ultrafast charge transfer dynamics pathways in two-dimensional
MoS2–graphene heterostructures: a core-hole clock approach”. In: Phys. Chem. Chem.
Phys. 19 (2017), p. 29954.
[124] S. S. Baik, S. Im, and H. J. Choi. “Work Function Tuning in Two-Dimensional MoS2
Field-Effect-Transistors with Graphene and Titanium Source-Drain Contacts”. In: Scientific
Reports 7 (2017), p. 45546.
[125] B. Sun et al. “Large-area flexible photodetector based on atomically thin MoS2-graphene
film”. In: Materials and Design 154 (2018), p. 1.
[126] M. Z. Iqbal, S. Khana, and S. Siddique. “Ultraviolet-light-driven photoresponse of chemical
vapor deposition grown molybdenum disulfide/graphene heterostructured FET”.
In: Applied Surface Science 459 (2018), p. 853.