| 研究生: |
蔡來福 Lai-fu Tsai |
|---|---|
| 論文名稱: |
以電漿輔助化學氣相沉積法室溫成長氧化鋅薄膜之研究 |
| 指導教授: |
陳培麗
Pei-Li Chen |
| 口試委員: | |
| 學位類別: |
碩士 Master |
| 系所名稱: |
理學院 - 光電科學與工程學系 Department of Optics and Photonics |
| 畢業學年度: | 90 |
| 語文別: | 中文 |
| 論文頁數: | 78 |
| 中文關鍵詞: | 電漿輔助化學氣象沉積法 、氧化鋅 、薄膜 |
| 外文關鍵詞: | RFPECVD, thinfilm, ZnO |
| 相關次數: | 點閱:11 下載:0 |
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本研究採用管狀高週波電感耦合式電漿輔助化學氣相沈積系統,以二乙基鋅及氧氣之混合氣體為原料,在玻璃基板上合成氧化鋅薄膜。研究著重於探討高週波輸入位置及能量、輸入氣體組成等參數對薄膜特性的影響。所得薄膜以探針測厚儀(á-step)測量厚度、傅氏紅外線光譜儀(FTIR Spectroscopy)作鍵結分析、X-光繞射儀作結晶性分析及
掃描式電子顯微鏡(SEM)作表面形態分析。
由實驗中可發現,輸入DEZ 原料60mTorr 時,加入適當的氧氣43∼47mTorr,高週波能量輸入5W時,成長出含電漿高分子的氧化鋅薄膜,其中電漿高分子成分為最低。輸入氧氣56mTorr 時、高週波能量8W時,可得到具(002) 面preferred orientation 的氧化鋅薄膜,本研究已初步完成氧化鋅薄膜的成長,但仍含有少量的電漿高分子的成
份。
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