本論文使用電漿輔助原子沉積法沉積抗反射膜於PMMA塑膠基板，在低溫製程60ºC下使用氧氣混氬氣的氧化方式，探討HfO2、SiO2、Al2O3折射率(n)和消光係數(k)的趨勢藉此獲得最佳的製程參數，研究發現使用電漿輔助原子沉積技術在低溫60ºC下，HfO2薄膜的結晶強度會隨著ALD循環次數的增加而提高，因此在本論文研究出在HfO2薄膜中插入抑制層降低薄膜的結晶現象，經過X光繞射儀量測HfO2薄膜其結晶強度成功從2256.09下降至1.2，使用原子力顯微鏡分析薄膜表面，其薄膜粗糙度從1.25 nm下降至0.434 nm有著大幅度的改善，並透過恆溫恆濕試驗測試抗反射膜的耐久度，在溫度85 ℃與濕度85%條件下未插入抑制層的抗反射膜只維持52小時，有插入抑制層的抗反射膜，其耐久度能延長至352小時。

In this paper, plasma-assisted atomic layer deposition method is used to coat anti-reflection film on PMMA substrate, and the oxidation method of oxygen mixed with argon plasma is used at low temperature process 60ºC, and the refractive index (n) and extinction coefficient (k) trend to obtain the best process parameters. It is found that the crystallization of HfO2 films increases with the increase of the number of ALD cycles using the plasma-assisted atomic layer deposition technology at a low temperature of 60ºC. After inserting the inhibitory layer into the HfO2 film, the crystallization of the film was successfully reduced. The HfO2 film was analyzed by X-ray diffractometer, and the crystalline strength was successfully reduced from 2256.09 to 1.2. The surface of the film was analyzed by atomic force microscopy. The roughness of the film decreased from 1.25 nm to 0.434 nm. There has been a great improvement, and the durability of the anti-reflection film is tested through the constant temperature and humidity test. Under the test at a temperature of 85 ℃ and a humidity of 85%, the anti-reflection film only lasts for 56 hours, and the anti-reflection film with inhibitory layer is extend to about 352 hours.

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