22本論文針對光纖通訊系統前級接收端部分做相關之研究與製作，其包括應用於短波長不同材料之光偵測器。在光偵測器方面，使用具有高增益效果之光電晶體（HPT : Heterojunction Phototransistor），本論文中便探討矽鍺光電晶體與砷化鎵光電晶體的結構及特性分析。
首先利用TMA MEDICI 二維元件模擬軟體比較矽鍺光電晶體與砷化鎵光電晶體在直流與高頻特性以及光直流與高頻脈衝響應上之特性表現，然後利用TSMC 0.35 µm SiGe HBT與GCTC GaAs power HBT提供之製程技術加以實現，並利用本實驗室高頻以及光電量測系統進行量測。
針對 SiGe HPT吸收效率不佳與操作速度低兩因素，模擬在基極與集極之間加入SiGe MQW來增加SiGe HPT對光的吸收效應以及改善Bandwidth。實驗結果在collector層加入五層MQWs Si0.5Ge0.5 的HPT上，可以得到光電流超過100 µA以上，Bandwidth也有1.25 GHz以上。
而利用GCTC下線的GaAs HPT，emitter size 為2.8×12µm2而照光面積為1×14 µm2的元件量測得到Dark current為22 nA，Photocurrent為1 mA，Responsivity為5 A/W 與f-3dB為2.15 GHz，證明砷化鎵光電晶體叫矽鍺光電晶體適合用於短波長之光纖通訊使用上。

Use GCTC fabricate GaAs HPT ，emitter size is 2.8×12µm2 and illumination area is 1×14 µm2 device have Darkcurrent is 22nA，Photocurrent is 1mA，Responsivity is 5 A/W，f-3dB is 2.15 GHz，prove GaAs HPT is better than SiGe HPT using in short wavelength optical communication.

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