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研究生： 紀卉彥
Hui-yen Chi
論文名稱： 自組裝嵌段共聚高分子/小分子混成奈米浮閘極記憶體:元件製備及效能評估
Self-Assembly Block Copolymers/Small Molecules Hybrid Nano-Floating Gate Memory: Device Fabrication and Performance Evaluation.
指導教授： 劉振良
Cheng-liang Liu
口試委員:
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程與材料工程學系
Department of Chemical & Materials Engineering
論文出版年： 2014
畢業學年度： 102
語文別： 中文
論文頁數： 99
中文關鍵詞： 嵌段高分子 、自組裝 、記憶體 、非揮發性 、浮閘極
外文關鍵詞： block copolymers, self-assemble, memory, nonvolatile, floating gate
相關次數： 點閱：11  下載：0 
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    • 本研究利用poly(styrene-block-4-vinylpyridine)(PS-b-P4VP)嵌段共聚高分子及ferrocenemethanol(FM)小分子混成材料所形成之自組裝超分子結構製作有機高分子奈米浮閘極電晶體式記憶體元件中之電荷捕捉層，並以pentacene為有機半導體層製作於SiO2/Si基板上。因PS-b-P4VP嵌段共聚高分子以自組裝方式形成不同奈米微結構(如球狀、柱狀、層狀)，且FM小分子及嵌段共聚高分子中P4VP鏈段產生氫鍵鍵結，使小分子間彼此不聚集，易分散於特定P4VP高分子鏈段結構內。在此探討調控混成材料之不同薄膜微結構形貌對記憶體元件效能影響。此外並可藉由控制混摻小分子摻入量及嵌段共聚高分子鏈段比例使記憶體元件達最佳化表現。

    Organic nano-floating gate memory devices were fabricated using self-assembly supramolecular block copolymer hybrid thin films of poly(styrene-block-4-vinylpyridine) (PS-b-P4VP) and ferrocenemethanol (FM) small molecules as charge trapping layer, and pentacene as organic semiconductor on SiO2/Si substrate. The FM small molecules selectively hydrogen bonded with pyridine moieties of PS-b-P4VP block copolymer can be well dispersed within P4VP microdomain without significant aggregation. The nanoscale thin film morphologies and memory characteristics can be fully optimized and compared depending on the loading ratio of small molecules and the segment ratio of block copolymers.

    目錄 摘要 i Abstract ii 誌謝 iii 目錄 v 圖目錄 viii 表目錄 xiv 第一章 緒論 1 1-1 前言 1 1-2 記憶體簡介 1 1-3 有機高分子記憶體 3 1-3-1 電容式記憶體 3 1-3-2 電阻式記憶體 5 1-3-3 電晶體式記憶體 9 1-3-3-1 浮閘極有機記憶體 14 1-3-3-2 電荷捕捉有機記憶體 24 1-3-3-3 鐵電有機記憶體 28 1-4 嵌段共聚物 29 1-4-1 嵌段共聚物自組裝行為 29 1-4-2 超分子共聚物自組裝行為 31 1-5 研究動機 36 第二章 實驗方法 39 2-1 實驗藥品 39 2-2 實驗儀器及設備 40 2-3 超分子薄膜製備 40 2-4 溶劑退火裝置 41 2-5 元件製備 42 2-6 元件電性量測 43 2-7 顯微影像觀察 43 2-8 低掠角小角度X光散射分析 43 第三章 結果與討論 44 3-1 電荷捕捉層薄膜結構分析 44 3-1-1 傅立葉轉換紅外線光譜分析 44 3-1-2 原子力顯微鏡分析 45 3-1-3 低掠角小角度X光散射分析 53 3-2 記憶體電性分析 58 3-2-1 輸出特性曲線圖 58 3-2-2 轉移特性曲線圖 59 3-2-3 寫入-讀取-消除-讀取迴圈 68 3-2-4 滯留時間 70 3-2-5 電荷捕捉機制 71 第四章 結論及未來展望 74 參考文獻 77  

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