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研究生： 吳賀傑
Ho-Chieh Wu
論文名稱： 用新變數法探討一維半導體元件之交流模擬
New Variables for AC Simulation of 1–D Semiconductor Devices
指導教授： 蔡曜聰
Yao-Tsung Tsai
口試委員:
學位類別： 碩士
Master
系所名稱： 資訊電機學院 - 電機工程學系
Department of Electrical Engineering
畢業學年度： 95
語文別： 英文
論文頁數： 40
中文關鍵詞： 交流
外文關鍵詞： ac
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    • 在這篇論文中，我們使用新變數來處理一維元件之AC模擬，同時，使用兩種方法來執行模擬，其一是經由內部模擬器來進行，另一個是經由外部模擬器，也就是我們實驗室所開發的AC_CKT 電路模擬器來執行。我們會介紹AC_CKT的使用方法並用幾個範例來介紹輸入檔的撰寫格式，然後我們以一個金氧半電晶體來做驗證，在不同頻率下量測其C-V曲線，最後比較兩種方法得到的模擬結果。

    In this thesis, we use new variables to process 1-D device ac simulation. We develop two methods for ac simulation. One is through the internal ac solver. The other is through AC_CKT simulator which is developed by our group. We will introduce the AC_CKT simulator and use some examples to show how to write the input file for the AC_CKT simulator. Then, we use an MOS capacitor as an example to measure the C-V curve under different frequencies. Finally, we will compare the simulation results of the two methods.

    Contents 1. Introduction……………………………………………………….....................1 2. Three variables, Vn, Vp, Φ, in transient simulation………………….3 2.1 1-D Model review…………………………………………………………..3 2.2 The comparison of new variables and old variables………………………..6 2.3 The simulation result of 1-D semiconductor devices……………………...13 3. 1-D device AC simulation and applications…………………………...18 3.1 Flow chart and the setting of the boundary condition……………………..18 3.2 MOS capacitor C-V simulation……………………………………………24 3.3 The special capacitor at the MOS capacitor’s gate………………………..26 4. AC_CKT simulator and its application………………………………...29 4.1 Introduction to AC_CKT simulator………………………………………..29 4.2 Construction of 1-D device AC model for AC_CKT simulator…………...32 4.3 1-D device simulation by using AC_CKT simulator……………………...35 5. Conclusion……………………………………………………………………..39 List of Reference…………………………………………………………………40

    [1] C.-L. Teng, “An equivalent circuit approach to mixed-level device and circuit
    Simulation,” M. S. Thesis, Institute of EE, National Central University, Taiwan,
    Republic of China, Jun, Chapter 2, pp. 5-10, 1997.
    [2] S. J. Li, C. H. Ho, C. N. Liao, and Y. T. Tsai, “Log-scale method with equivalent circuit model in semiconductor device simulations, ” to be appeared in Journal of the Chinese Institute of Engineers.
    [3] C. Durney, L. D. Harris, and C. L. Alley, Electric Circuits, Taipei Publications Trading Company, Chapter 2, pp. 28-37, 1982.
    [4] S. Franco, Electric Circuits Fundamentals, Saunders College Publishing, Chapter 13, pp. 576-584, 1994.
    [5] H. C. Casey, Jr. Devices for Integrated Circuit Silicon and III-V Compound Semiconductors, John Wiley & Sons, Inc, Chapter 7, pp. 308-314, 1999.
    [6] Spice: A Guide to Circuit Simulation and Analysis Using PSpice, 3rd ed., Paul W. Tuinenga, Prentice Hall, 1995.

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