本研究探討鋁矽合金熱成長氧化膜的成長機制分析，使用純鋁(99.999%)鈀材及矽含量為1.2wt%的鋁矽合金，使用乾磨方式研磨試片表面至P2000號砂紙，在空氣與氮氣氣氛下，將純鋁試片置於610℃持溫1~25小時以及鋁-1.2矽置於570℃持溫1~25小時以生成熱合氧化膜。使用SEM、ESCA、EPMA、TGA及XRD對氧化膜作性質分析。
實驗結果發現，純鋁熱合氧化膜中有微通道的存在，結構緻密，整個氧化膜相轉換大致依循著水合氧化鋁脫水作用形成氧化鋁的機制生長，並會從基材釋放出氫氣。610℃持溫25小時的氧化膜表層已轉化為θ-氧化鋁，靠近基材的則為γ-氧化鋁。鋁-1.2矽合金熱合氧化膜結構鬆散組成複雜，較純鋁氧化膜厚，矽隨機分散在氧化膜中並形成團塊，且因為矽的幫助使得鋁-1.2矽氧化膜中富含鋁。另外在氮氣氣氛下，觀察到氧化膜較空氣氣氛生長速率快使得膜厚較厚。

Pure aluminum and Al-1.2mass%Si alloy were heated at a specific temperature for a giving time after cube samples had been polished by abrasive papers. The amorphous layer formed on the sample surface then transformed to be crystallized oxide film during heating and/or holding. This study discussed the thermal-formed oxide film progressively developed on the surface of the cube samples. For pure aluminum, gibbsite forms initially then γ-alumina forms due to the gibbsite dehydration and the gamma-alumina grows in thickness via the diffusion of oxygen inward to the interface of oxide film and substrate. The thermally-formed oxide film is comprised of complex oxides of γ-alumina, α-alumina, diaspore and gibbsite. The oxide on Al-1.2mass%Si is loosed in structure and composed mainly of γ-alumina, diaspore and gibbsite along with metallic silicon and/or aluminum. In nitrogen gas, the thermally-formed oxide got more thickness.
This study used TGA analysis to describe the progressive development of the thermally-formed oxide on the pure Al and the Al-1.2mass%Si alloy respectively. The oxide film on the polished surface was observed by an optical microscope and a scanning electron microscope. Auger electron spectroscopy was used to analyze the composition of the surface oxide. An X-ray powder diffractometer equipped with glancing incident angle (G.I.A.) was utilized to test the constituents of thin oxide film on the heated samples.

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