摘 要
在本論文中，我們利用矽鍺/矽異質結構，實際製作出有Si1-xGex（x = 0、0.3）通道層的動態啓始電壓金氧半電晶體（Dynamic Threshold Voltage MOSFET，DTMOS）及一般金氧半電晶體（standard MOS）。並且分別在溫度為77K、150K、300K、320K、350K時，量測其直流特性表現，然後去比較溫度對DTMOS及standard MOS的影響。
在我們實際量測結果中，可看出SiGe DTMOS擁有比Si standard MOS高的驅動電流、大的轉導值、低的靜態漏電流及理想的次臨限斜率。而在溫度效應方面，SiGe DTMOS的啓始電壓及次臨限斜率對溫度的變化比standard MOS來得小，在高溫時，元件特性劣化的程度也比standard MOS來得小，所以SiGe DTMOS對溫度的穏定性比較好。
從以上SiGe DTMOS所擁有的優點來看，SiGe DTMOS的確是具有在低電壓、低功率及高速應用方面的潛力。

Abstract
In this thesis, we have demonstrated a high performance Si1-xGex（x = 0、0.3）DTMOS for low voltage、low power and high speed device applications. Measured the DC performance and compared the temperature effect between DTMOS and standard MOS at 77K、150K、300K、320K and 350K, respectively。
In our measurement, we had found that the SiGe DTMOS has higher drive current、greater transconductance、lower leakage current and ideal subthreshold slope than standard MOS. Beside, the threshold voltage and subthreshold slope of SiGe DTMOS have less sensitive for temperature than that of standard MOS. At high temperature, the degradation of SiGe DTMOS performance had lower than Si standard MOS. Therefore, SiGe DTMOS had better stability for temperature.
According to the above advantage, SiGe DTMOS have the potential in low voltage、low power dissipation and high speed application.

參考文獻資料
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