本論文將使用射頻磁控濺鍍進行薄膜沉積並結合後退火製程，作為主要的實驗方法。島狀形成的成因主要是利用鍺材料與矽材料之間的晶格常數差異。鍺材料在特定的生長條件下，將會由二維結構逐漸轉變為三維結構，並藉由以下變因來探討鍺島的生長機制，其中包括了後退火的方式、後退火的溫度、後退火的持溫時間、濺鍍功率以及鍺薄膜沉積在不同材料上等差異，之後並針對這些自我組裝形成的島狀結構進行拉曼光譜、原子力顯微鏡、掃描式電子顯微鏡等進行分析。
本實驗採用射頻磁控濺鍍是因為相較於其他已知可行的製程較為便宜，如，分子束磊晶，化學氣相沉積等，且製程材料不具有毒氣體也較為穩定，因此在往後應用在商業用途上將會是一大關鍵。

In this thesis, we have used RF magnetron sputtering systems and post-annealing process as primary experiment method. The formation of Ge islands is based on the difference in lattice constants between Si and Ge. These Ge films would transform their morphology from 2-dimension to 3-dimension, by controlling the following parameters to study their growth mechanism, such as, post-annealing method, post-annealing temperature, post-annealing soaking time, the sputtering power and with or without the interlayer. Then, we have analyzed these Ge islands by Raman spectrum, atomic force microscopy (AFM) and scanning electron microscopy (SEM).
The RF magnetron sputtering is used in this experiment because it is cheaper than other processes, such as molecular beam epitaxy, chemical vapor deposition, etc., and its raw materials are non-toxic and stable. Therefore, it will be one of the key processes in the production for the commercial applications.

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