We utilized the p-type InxGa1-xN/GaN SLs as p-type ohmic contact layer in our laser diode structure. The tunneling barrier width of the metal-semiconductor contact is reduced because of its high hole concentration and low resistivity near the surface, thereby allowing for a high hole tunneling probability through the barrier. By comparison, the effects of the damage during RIE etching were reduced by using the p-type InxGa1-xN/GaN SLs layer as p-type ohmic contact. Then, the electrical characteristic of laser diode was improved.

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