以乾式蝕刻法於柔性聚亞醯胺基板製備微通孔及銅電鍍填充應用之研究

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研究生：	許博任 Po-Jen Hsu
論文名稱：	以乾式蝕刻法於柔性聚亞醯胺基板製備微通孔及銅電鍍填充應用之研究 Preparation of Micro Through Holes and Copper Electroplating Filled Application on Flexible Polyimide Substrates by Dry Etching
指導教授：	李勝偉 Sheng-Wei Lee
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學與工程研究所 Graduate Institute of Materials Science & Engineering
論文出版年：	2020
畢業學年度：	108
語文別：	中文
論文頁數：	72
中文關鍵詞：	電漿蝕刻、聚亞醯胺、微通孔
外文關鍵詞：	Plasma etching, polyimide, micro-through-holes
相關次數：	點閱：13 下載：0
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本研究使用乾式電漿蝕刻法於聚亞醯胺(PI)基板進行微通孔加工，預期
藉由電漿蝕刻之優異特性，並透過調控射頻功率(RF Power)、下電極功率與腔體工作壓力等關鍵參數，製備直徑小於30 μm 且蝕刻錐角(Taper angle)趨近0˚之圓形通孔，進一步以電鍍填銅應用演示蝕刻完整性，最終計算通孔蝕刻製程之製程能力指標(Cpk)，評估本製程穩定性與符合規格程度。
結果顯示，厚度25 μm 之PI 基板可於RF Power 600 W、LF Power 300W、腔體壓力8 Pa 及氧氣流量70 sccm 下蝕刻15 min.後成功穿孔，孔洞直徑約25 μm；其Taper angle 約2.6˚，最佳化參數後將腔體壓力調整至6 Pa，可於厚度50 μm 之PI 基板蝕刻36 min.後成功製備直徑25 μm 與15 μm 通孔，Taper angle 有趨近0˚之表現，其計算後Cpk 值與潛在Cp 值分別為1.164 與1.212，而通孔亦可於電鍍填充銅後保有圖樣完整性。

The study demonstrates how dry plasma etching is used for micro-through hole processing on polyimide (PI) substrates. It is expected to achieve an etched
diameter less than 30 μm and an etched taper angle close to 0˚ through by adjusting RF power, lower electrode power and the chamber working pressure.
Furthermore, to demonstrate the etching integrity by applying electroplated copper after etching. Finally, the process capability index of through-hole process is calculated to evaluate the stability and the degree of conformity of the process.
The results show that the PI substrate with a thickness of 25 μm can be successfully perforated after etching for 15 min. The hole diameter is about 25μm; it’s taper angle is about 2.6˚. After optimizing the parameters, the PI substrate with a thickness of 50 μm can be etched with a diameter of 25μm and with a thickness 15 μm through-hole, while taper angle is even closer to 0˚. The value of
Cpk is 1.164, and the through-hole can also be etched successfully and the pattern integrity is maintained after the plating and copper filling.

摘要 ........................................................................................................................ i
Abstract ................................................................................................................. ii
目錄 ...................................................................................................................... iv
圖目錄 ................................................................................................................. vii
表目錄 .................................................................................................................. ix
第一章、 前言 .................................................................................................. 1
第二章、 文獻回顧與實驗原理 ...................................................................... 4
1 聚亞醯胺(Polyimide, PI)材料 ............................................................. 4
1.1 聚亞醯胺(Polyimide, PI)沿革 ................................................... 4
1.2 聚亞醯胺(Polyimide, PI)特色與應用 ...................................... 5
2 軟性銅箔基材(Flexible Copper Clad Laminate, FCCL)介紹 ............ 8
2.1 三層式PI 銅箔基材 .................................................................. 9
2.2 雙層式PI 銅箔基材 .................................................................. 9
2.3 塗佈法PI 銅箔基材 ................................................................ 10
2.4 壓合法PI 銅箔基材 ................................................................ 10
2.5 濺鍍/電鍍法PI 銅箔基材 ....................................................... 11
3 微影(Lithography) ............................................................................. 12
3.1 曝光設備(Exposure equipment) .............................................. 13
3.2 光罩(Mask) .............................................................................. 13
3.3 光阻(Photoresist) ..................................................................... 14
4 電漿介紹 ............................................................................................ 16
4.1 電漿之生成 ............................................................................. 16
4.2 電漿蝕刻機制 ......................................................................... 17
5 FPC 微孔加工 .................................................................................... 19
5.1 機械製程(Mechanical process) ............................................... 20
5.2 濕式化學製程(Wet chemical process) .................................... 22
5.3 乾式電漿製程(Plasma process) .............................................. 24
5.4 雷射製程(Laser process) ......................................................... 27
6 製程能力指標(Process Capability Index, Cpk) ................................ 31
第三章、 實驗方法 ........................................................................................ 33
1 實驗流程 ............................................................................................ 33
1.1 光罩設計 ................................................................................. 34
1.2 光阻塗覆 ................................................................................. 35
1.3 軟烤(Soft bake) ....................................................................... 36
1.4 曝光 ......................................................................................... 36
1.5 顯影 ......................................................................................... 37
1.6 銅蝕刻開窗 ............................................................................. 37
1.7 電漿蝕刻 ................................................................................. 39
1.8 電鍍銅 ..................................................................................... 40
2 分析與實驗設備 ................................................................................ 41
2.1 感應耦合電漿(Inductively Coupled Plasma)蝕刻機 ............. 41
2.2 旋轉塗佈機(Spin coater) ........................................................ 42
2.3 掃描式電子顯微鏡(Scanning electron microscope) .............. 43
第四章、 結果與討論 .................................................................................... 44
1 腔體壓力於側壁準直性影響 ............................................................ 44
2 射頻功率與下電極功率影響 ............................................................ 45
3 柔性PI 基板微通孔 .......................................................................... 46
3.1 PI 厚度25 μm 之微通孔 ........................................................ 46
3.2 PI 厚度50 μm 之微通孔 ........................................................ 47
4 微通孔電鍍填銅 ................................................................................ 49
5 通孔試片Cpk 值 ............................................................................... 50
6 均勻性測試 ........................................................................................ 52
第五章、 結論 ................................................................................................ 53
第六章、 參考文獻 ........................................................................................ 54
                                

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