| 研究生: |
許文杰 Wen-chieh Hsu |
|---|---|
| 論文名稱: |
大面積覆晶式氮化鎵發光二極體之研製與特性探討 Large Area GaN based flip-chip light emitting diode |
| 指導教授: |
綦振瀛
Jen-inn Chyi |
| 口試委員: | |
| 學位類別: |
碩士 Master |
| 系所名稱: |
資訊電機學院 - 電機工程學系 Department of Electrical Engineering |
| 畢業學年度: | 92 |
| 語文別: | 中文 |
| 論文頁數: | 65 |
| 中文關鍵詞: | 氮化鎵 、發光二極體 |
| 外文關鍵詞: | LED, GaN |
| 相關次數: | 點閱:3 下載:0 |
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在白光發光二極體照明的應用上,受限於氮化鎵晶粒的發光效率與螢光粉的轉換效率,目前白光二極體發光效率只有74 lm/W,尚不足以取代日常照明。為了提高發光亮度以及改善效率,在本論文中分別以大面積元件及覆晶式元件製程技術為研究之目標;應用大面積元件之技術可增加元件的操作電流,達到光能輸出增加的效果。同時為了增進元件在高操作電流下的效率表現,大面積發光二極體若配合覆晶之製程技術則可增加熱散逸的能力,減緩因熱累積而造成的效率下降。在本論文中主要針對發光二極體尺寸大型化時出現之電流擁塞現象及覆晶式元件反射電極之熱穩定性做研究探討,並提出改善之方案。最後結合上述兩項技術所製作的大面積覆晶式氮化鎵發光二極體,能達到提高光能輸出,同時維持元件操作時穩定性的目標。
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方啟鑫
國立中央大學電機所碩士論文