本研究使用光放射光譜儀(OES)監測電漿物種變化，四極柱質譜儀(QMS)監測物種濃度，於電子迴旋共振化學氣相沉積製備非晶矽薄膜之製程。調變的參數為微波功率密度、製程壓力、磁場共振位置、氫稀釋濃度比並輔以FTIR、Detak、E-gun來探討薄膜的結構特性，以少數載子生命週期和微結構因子判斷薄膜品質的好壞。最後將電漿特性與薄膜特性相互比較，以期建構電漿診斷平台。
本研究綜合各參數所推測的良好薄膜品質的參數去成長，藉由光敏感度、R*得知在磁場組態40/12/22 A 、功率密度 1.5 W/cm2、工作壓力10 mTorr其光敏感度達 〖2x10〗^3。由OES量測之Si*/SiH*可作為電子溫度指標。QMS所量測之SiH2/SiH3可做為預測薄膜品質趨勢之方法。
本研究整合OES和QMS，使用SiH2/SiH3為薄膜品質之指標並將Si*/SiH*作為電子溫度指標。最後，以沉積非晶矽薄膜為例，解析ECR電漿沉膜機制。並可利用此結論，在尚未成長薄膜前，就先行營造出有利成長良好特性的薄膜生長環境，藉此減少製程之試誤時間。

In this study, OES (Optical emission spectrometer), and QMS (Quadrupole mass spectrometry) were utilized as plasma diagnostics tools and a-Si:H (Hydrogenated amorphous silicon ) thin film was deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD). QMS and OES were used to identify active species in the plasma. The film quality such as microstructure fraction (R*), hydrogen content (CH), deposition rate, and lifetime were investigated by FT-IR, Detak and E-gun. The relationship between the film quality and plasma characteristics with varying process parameters (microwave power density, working pressure, magnetic field resonance position, and dilution ratio) was discussed.
The research collects all the parameter to predict the good quality of film. It uses the photosensitivity, microstructure fraction (R*) that can obtain the photosensitivity 〖2x10〗^3 under the conditions of magnitude 40/12/22 A, power density 1.5 W/cm2 and working pressure 10 mTorr.
Consequently, the research integrates the OES and QMS for using SiH2/SiH3 as the index of predicting quality of film and takes Si*/SiH* as the index of electron temperature. By depositing amorphous silicon thin film, it analyzes the mechanisms of ECR plasma and the research results can be used for creating the good environment for depositing film that can reduce the try and error of process time.  

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