摘 要
本論文主要利用IC圖案化製程，製作金屬內連線引洞(Vias)的結構再使用微波電漿化學氣相沉積(Microwave Plasma Chemical Vapor Deposition, MPCVD)，以Ta的良好特性當作催化劑Ni的阻障層及上下電極，成長多壁奈米碳管(Multi-wall Carbon Nanotube, MWCNT)來當做積體電路中內連線的材料。
本實驗配合掃描式電子顯微鏡(SEM)、拉曼光譜儀(Raman Spectroscopy)和I-V量測儀，探討在基板400oC下不同製程參數對 奈米碳管的型態及電性的影響。結果發現在不同前處理電漿功率與不同前處理時間的參數中，當前處理電漿功率越大、前處理時間越長，奈米碳管的直徑會減小、密度會增大，結構的電阻值會降低。在不同成長電漿功率的參數中，奈米碳管的石墨化程度隨著成長電漿功率的增加而上升，結構的電阻值也因奈米碳管石墨化程度越好而下降。而在不同甲烷流量比例的參數中，15%的甲烷流量比例擁有最好的石墨化程度，以及最低的結構電阻值。實驗中還利用不同的溫度量測奈米碳管的電性，探討溫度對奈米碳管電性的影響，結果觀察到奈米碳管的電阻會隨著溫度下降而增加。最後以Ta和TiN做為阻障層探討奈米碳管的型態，發現利用Ta為阻障層，成長奈米碳管，其直徑會較TiN阻障層來的小。

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