非揮發性記憶體在現今社會中扮演非常重要的角色，幾乎在任何消費性電子產品中皆為不可或缺的記憶元件。現今最普遍的非揮發性記憶體元件為快閃記憶體，但隨著半導體元件的微縮，快閃記憶體的穿隧介電層的厚度將隨之下降，導致漏電現象嚴重而無法滿足記憶功能。「電阻式記憶體」由於結構簡單，存取速度快，以及省電的特性，被認為是最有可能成為下一個世代的非揮發性記憶體元件之一。
本論文採用的電阻式記憶體的結構為金屬/絕緣層/金屬的結構，相當適合利用當前積體電路的後段製程技術來進行製作，可將記憶體元件製作於通孔之中。本實驗使用後段製程常用的金屬鋁做為電極，並且使用常見的高介電係數材料氧化鋁做為絕緣層，來探討其記憶功能、特性及其面對將來微縮的潛力，實驗結果發現在單極操作下具有非揮發記憶特性，且有高的高低電阻比值以及良好的微縮特性，且由於製程完全使用現階段積體電路製程技術，所以具有商業化量產的可能性。

Non-volatile memory (NVM) plays a vital role in modern society, and it is essential in almost every consumer electronic products. The most prevalent NVM used nowadays is flash memory. However, with the scaling down of semiconductor device, tunneling oxide thickness is also going down, which leads to a severe leakage of storage charge, and unable to satisfy the memory requirement. Resistive random access memory (RRAM) is considered one of the most promising one to become next-generation NVM device due to its simple structure, fast program/erase speed, and low power consumption.
Owing to its metal/insulator/metal structure, RRAM is suitable to be fabricated by utilizing modern integrated-circuit back-end-of–line technology, and buried into via. In this thesis, the RRAM was fabricated by using Aluminum, which is a common interconnect material in back-end process , as its top and bottom electrode, and Al2O3, which is a high-K material in semiconductor technology, as its insulator layer, Its memory capability, characteristics and scaling potential are investigated in this study, and the experiment result shows that the non-volatile memory characteristic was obtained under unipolar operation with good high/low resistance ratio and scaling potential. Since its fabrication process is fully compatible with modern VLSI technology, Al/Al2O3/Al RRAM device may have the possibility to be commercialized in the near future.

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