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研究生： 吳喬蓁
Ciao-Jhen Wu
論文名稱： 應用在> W頻段（>110GHz）覆晶式具超高飽和電流-頻寬乘積的近彈道傳輸光偵測器
Extremely High Saturation Current-Bandwidth Product Performance of a Near-Ballistic Uni-Traveling-Carrier Photodiode with a Flip-Chip Bonding Structure
指導教授： 許晉瑋
Jin-Wei Shi
口試委員:
學位類別： 碩士
Master
系所名稱： 資訊電機學院 - 電機工程學系
Department of Electrical Engineering
畢業學年度： 97
語文別： 中文
論文頁數： 62
中文關鍵詞： 光偵測器 、覆晶結合
外文關鍵詞： photodiode, flip chip bonding
相關次數： 點閱：16  下載：0 
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    • 本論文針對1.55μm波長的光纖通訊系統中接收端前級元件光二極體之製作與研究，在元件幾何結構上摻入一層P型的電場承受層，因此可讓內部的電子速度維持在over shoot velocity，克服P-I-N 光偵測器與傳統單載子傳輸光偵測器的缺點，進而達到高速、高響應度、高頻寬的表現。並且利用覆晶結合技術與附有金柱基的氮化鋁基板結合，讓主動區面積28?m2的元件能夠承受更高的飽和電流(13.6mA)，而主動區面積144?m2預估擁有創新紀錄的飽和電流-頻寬之乘積(6660mA-GHz, 37mA, 180GHz)。

    In this study, we demonstrate near-ballistic uni-traveling carrier photodiodes (NBUTC-PDs) with an optimized flip-chip bonding structure, wide 3-dB optical-to-electrical (O-E) bandwidth (>110GHz), and extremely high saturation current-bandwidth product performance (37mA, >110GHz, >4070mA-GHz). NBUTC-PDs with different active areas (28 to 144?m2) are fabricated and flip-chip bonded with co-planar waveguides (CPWs) onto an AlN based pedestal. This improves the high-power performance without seriously sacrificing the speed performance. In addition, the saturation-current measurement results indicate that after inserting a center bonding pad on the pedestal (located below the p-metal of the NBUTC-PD for good heat-sinking), the saturation current performance of the device becomes much higher than that of the control device (without the center bonding pad), especially for the device with a small active area (28?m2). The measurement and modeling results indicate that a device with a 144?m2 active area and optimized flip-chip bonding pedestal can achieve an extremely high saturation current-bandwidth product (6660mA-GHz, 37mA, 180GHz).

    Abstract .............................i 摘要 .............................ii 誌謝 .............................iii 目錄 .............................v 圖目錄 .............................vii 表目錄 .............................ix 第一章 序論 1 §1.1 光纖通訊之發展趨勢.............................1 §1.2 光偵測器之發展與應用 .........................7 §1.3覆晶結合技術之發展趨勢 ......................11 §1.4論文動機與架構 ......................................14 第二章 彈道傳輸單載子光偵測器設計 ..............15 §2.1傳統P-I-N光偵測器工作原理 .................15 §2.2單載子傳輸光偵測器工作原理 ...............17 §2.3 彈道傳輸單載子光偵測器之磊晶層設計 ......21 第三章 彈道傳輸單載子光偵測器設計 ...............24 §3.1近彈道傳輸單載子光偵測器之製程 ...............24 第四章 彈道傳輸單載子光偵測器之量測與結果討論...........36 § 4.1 Heterodyne-Beating 量測系統之架設 ...........36 § 4.2 頻寬量測結果 ......................................37 § 4.3 高功率產生量測結果 .............................42 第五章 結論與未來研究方向 .............................45 參考文獻 ...............................................47

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