本文實驗在研究碳離子佈值於氮化鎵/氮化銦鎵多重量子井發光二極體之特性研究，以30keV、55keV、130keV 不同能量佈植，形成5×1016，5×1018 cm-3不同佈植濃度，佈植在氮化鎵/氮化銦鎵多重量子井發光二極體上濃度為5×1017cm-3 之P型氮化鎵，藉以形成碳離子佈植後的黃光發射特性，進而達成藍黃雙光渾成之白光發光二極體之製作技術開發。
光特性方面，利用光激發光譜(photoluminescence)的量測顯示，隨著碳離子佈植濃度的大於p型氮化鎵摻雜鎂的濃度時，本身p型氮化鎵的藍光發光機制(2.8eV)減弱，並開始有黃光放射的發光機制生成，而配合適合熱處理的修復，得到1050oc為最佳黃光放射修復溫度。
在電性方面， 根據霍爾效應特性量測(Hall effect
measurement)顯示，佈植的碳離子濃度一旦大於p型氮化鎵的電洞濃度10倍以上，試片轉變為n 型的氮化鎵。
發光二極體製作方面，由於P型氮化鎵被佈植區域因離子轟擊所造成損害及高濃度佈植轉變為n型之考量，本文採用網狀方格佈植結構的P型電極設計製作碳離子佈植於氮化鎵/氮化銦鎵多重量子井發光二極體，經發光二極體元件完成後量測其電激發光光譜，確實量得碳離子佈植所形成之黃光放射，證明以佈植方式形成白光二極體的可
能性。

The photoluminescence properties of Carbon ion
implantation into p-type GaN followed by rapid thermal annealing (RTA) in N2 ambient have been studied. By varying implantation concentrations, the p-type GaN can be converted into n-type GaN. Photoluminescence studies show that a green emission band could be observed from Cimplanted
GaN:Mg. It was shown that such a green emission
is related to the yellow luminescence observed from epitaxially grown C-doped GaN. The fabrication and characterization of C-implanted InGaN /GaN MQW LED was reported. The EL spectra obtained from the C-implanted LED device operated at 8V exists the peaks centered at
458nm and 525nm.

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