在PIN光二極體的部份考慮到降低接面電容與耦光難易二部份，選擇了適當的元件佈局。在這樣的考量下得到量子效率η=43%，光響應度R= 0.3 A/W。並利S參數的量測和HP-ADS軟體的模擬萃取了PIN光二極體的小訊號模型。並依照小訊號模型的結果選擇-5V作為PIN光二極體的偏壓。
在異質接面雙極性電晶體的部分，本論文中製作了射極面積為3x12μm2和4x12μm2二種尺寸的元件。在相同的電流密度下進行量測得到AE=3x12μm2的AlGaAs/GaAs HBT，fT為28GHz，fmax為16.25GHz。AE=4x12μm2的AlGaAs/GaAs HBT，fT為24.51GHz，fmax為13.45GHz。
論文最後利用前面章節所萃取的元件模型進行了電路的模擬，再依模擬的結果設計了光罩並完成2.5 Gb/s積體化光接收器的製作。轉阻放大器電路低頻增益值為44dBΩ(159Ω)，電路的f3dB為3.65GHz。

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