本論文中，完成一擁有溫度效應 InGaP/GaAs HBT 大訊號模型，利用在不同溫度下量測完成元件直流與交流相關參數萃取，使用 CW 量測方式，將熱電阻萃取出，加以描述元件自我加熱現象。並在真空液態氮環境中，量測與驗證元件小訊號與功率特性在不同溫度下(-40℃~85℃)。為了彌補元件模型在高頻雜訊不足，本論文將利用 SDD 與元件物理特性加以描述雜訊特性完成雜訊模型。
接著利用 InGaP/GaAs HBT 完成光通訊前端電路，傳送端雷射驅動器擁有高輸出調變電流與高電壓振幅將可以分別使用直接調變方式與間接調變方式驅動雷射二極體與光電調變器。接收端，轉阻放大器利用各級間不匹配與主動式回授增強頻寬使其符合 10 Gb/s 光通訊應用。

In this thesis, temperature dependence of InGaP/GaAs HBT large signal model was implemented, and the parameters about DC and AC of this device were further extracted under different temperatures. The thermal resistance was extracted by CW measurement to define self-heating phenomenon for HBT. Otherwise, small signal and power characteristic of device were derived and measured under different temperatures from 85℃ to -40℃ at vacuum LiN2 environment. In order to improve the disadvantage, which VBIC model described high frequency noise, AgilentTM ADS symbolically defined devices and physical characteristic are used.
However, InGaP/GaAs HBT technology was used(fabricated) to implement optical front-end circuits. Laser driver in the transmitter has the characteristics of high output voltage swing and high output modulated current, which can drive directly laser diode or indirectly modulator(EAM). In the receiver, mismatch technology and active feedback were utilized for the transimpedance amplifier to enhance bandwidth and it is conformed to 10 Gb/s optical communication application.

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