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研究生： 梁宏閔
Hung-Min Liang
論文名稱： 快速退火影響石墨烯晶粒尺寸之研究
Research of Graphene Grain Size by Rapid Thermal Annealing
指導教授： 郭倩丞
口試委員:
學位類別： 碩士
Master
系所名稱： 工學院 - 能源工程研究所
Graduate Institute of Energy Engineering
論文出版年： 2017
畢業學年度： 105
語文別： 中文
論文頁數： 61
中文關鍵詞： 石墨烯 、化學氣相沉積法 、粗糙度 、晶粒尺寸
相關次數： 點閱：4  下載：0 
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    • 石墨烯(graphene)具有高導電性、高光穿透率還具有高機械強度
    等優異的物理特性。現在製作石墨烯的方法有很多種類，其中以高溫
    的化學氣相沉積法最能生產出高品質石墨烯。
    本研究主要利用(rapid thermal process, RTP)，將石墨烯整體製程
    時間從數小時縮短至 1 小時內，使用銅箔作為基板，透過快速退火觀
    察在銅箔上石墨烯晶粒尺寸的變化。其中影響石墨烯晶粒大小的參數
    為: 溫度的高低，其最佳製程溫度為 1070℃；銅箔平整度，藉由化學
    電拋光來改變銅箔粗糙度，獲得最佳粗糙度的電壓值為 8.8V，其獲
    得最佳粗糙度為 0.406nm；氫氣/甲烷濃度的比例從 50 提高到 55 也
    能改變石墨烯晶粒的大小。使用 OM(optical microscope)來初步觀測石
    墨烯生長狀況，進一步使用 SEM(scanning electron microscope)觀察成
    長趨勢，石墨烯顆粒尺寸從最初生長的 4.295μm成長到本研究最大的
    尺寸 29.3μm，最大尺寸石墨烯 29.3μm製程參數為: 拋光電壓值為
    8.8V、製程溫度 1070℃、氫氣/甲烷比為 55。

    Graphene has many unique properties including high conductivity, transmittance and strength characteristics. There are many different processes to produce graphene. Chemical vapor deposition (CVD) is the best method among those processes to produce the high-quality graphene, however, the production of CVD wastes a lot of time. In this study, the graphene film is synthesized by rapid thermal process system in 40 minutes, compared to conventional CVD, it saves much time. Copper foil is the substrate in the high temperature (1070 oC) used for annealing. Temperatures, roughness of copper, the ratio of hydrogen/methane are the parameters affected graphene grain size. The best temperature to grow large grain graphene is 1070℃. Atomic force microscope reveals the reducing roughness (0.406nm) by chemical mechanical polishing(8.8V). The ratio of hydrogen/methane is also important to grow the grain size of graphene, the ratio of hydrogen/methane from 50 to 55 can increase the size of grain. optical microscope is adopted to know the appearance of the grain of graphene, then scanning electron microscope is used to observe the grain size of graphene. The results indicated that the increment of grain size from 4.295μm to 29.3μm (The temperature is 1070℃, 8.8V for chemical mechanical polishing, the ratio of hydrogen/methane is 55.) which is the biggest size in this study.

    摘要 ......................................... I Abstract .................................... II 致謝 ........................................III 目錄 ........................................ IV 圖目錄 ....................................... I 表目錄 ....................................... I 第一章 緒論................................... 1 1-1 前言 ..................................... 1 1-2 研究動機 ................................. 2 1-3 論文架構 ................................ 2 第二章 基礎理論與文獻回顧 ..................... 4 2-1 石墨烯 ................................... 4 2-2 透明導電膜 ............................... 7 2-3 石墨烯作為透明導電膜 ....................... 9 2-4 石墨烯製備方法 ..............................11 2-4-1 機械剝離法 ................................11 2-4-2 碳化矽磊晶法 ..............................12 2-4-3 氧化石墨烯還原法 ...........................13 2-4-4 化學氣相沉積法 ...........................14 2-4-5 快速升溫製程石墨烯 ........................18 2-6 控制石墨烯之單晶 ..........................19 第三章 實驗方法與儀器介紹 .....................23 3-1 石墨烯之製程 ............................23 3-1-1 化學氣相沉積法儀器介紹 ..................24 3-1-2 成長石墨烯 ............................25 3-1-3 石墨盒 ...............................26 3-2 分析儀器 ................................27 3-2-1 原子力顯微鏡 ..........................27 3-2-2 光學顯微鏡 ...........................28 3-2-3 掃描式電子顯微鏡 ......................28 第四章 結果與討論 ............................30 4-1 改變溫度影響石墨烯尺寸 ....................30 4-2 銅箔表面粗糙度對石墨烯晶粒尺寸之影響 ........32 4-2-2 拋光電壓值與銅箔表面粗糙度關係 ..........35 4-2-3 拋光退火與石墨盒的關係 ................36 4-2-4 拋光電壓值石墨烯顆粒大小的關係 .........38 4-3 氫氣/甲烷比影響石墨烯尺寸 ...............39 第五章 結論與未來工作 ......................41 參考文獻 ..................................43

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