電子束微影鄰近效應修正與BA-m Benzoxazine film製備抗反射層

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研究生：	洪聖宗 Sheng-Jung Hung
論文名稱：	電子束微影鄰近效應修正與BA-m Benzoxazine film製備抗反射層 Electron-beam Lithography Proximity Effect Correction and Fabrication of Anti-reflection Coating with BA-m Benzoxazine film
指導教授：	周正堂 Cheng-Tung Chou 林俊宏 Chun-Hung Lin
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 化學工程與材料工程學系 Department of Chemical & Materials Engineering
畢業學年度：	94
語文別：	中文
論文頁數：	106
中文關鍵詞：	鄰近效應、電子束微影、抗反射層
外文關鍵詞：	t Anti-reflection Coating, Electron-beam Lithography, Proximity Effec
相關次數：	點閱：13 下載：0
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在本篇論文有兩個主題，一個是電子術微影鄰近效應的修正，另一個抗反射層的製備。
積體電路發展至今已超過四十年，由演進歷史來看，每2-3年積體電路的集積度增加四倍，這與光學微影發展有密切關聯。但近來光學微影發展面臨到阻礙，如曝光波長及景深的限制。為了克服這些困難，不僅是對如何改善光源波長，同時針對具高解析度能力的電子束微影技術亦被廣泛地探討。電子束直寫微影成為最具有高解析度候選人，被應用到積體電路製造時，具有節省大量光罩費用的優勢。但低產出(throughput)與鄰近效應(proximity effect)控制是其發展上的最大問題。
第一個主題為研究電子束鄰近效應的校正，而研究方法採取實驗分析法來探討鄰近效應。透過適當的數學模型描述電子能量堆積及配合實驗資料的輔助，計算出鄰近效應參數(α、β、η)，並藉由建立一轉移層，先將圖形製作於轉移層上，再轉移至silicon wafer上，減小鄰近效應參數值之後，搭配劑量修正修正以達到準確的圖形設計尺寸。
對所有利用入射光來驅動之半導體元件而言，元件表面之反射率扮演了相當重要的角色，對太陽電池而言亦是如此，因此我們必須利用抗反射層來增加入射光在電池表面的穿透率。
第二個主題研究是探討利用熱交聯性高分子旋塗於晶圓上，以Ar電漿和烘烤改質材料，製備抗反射層，以AFM、SEM觀察其表面形貌探究其反射率大幅下降的原因。

There are two major topics in my research. One is the research of electron-beam lithography proximity effect correction. The other one is anti-reflectance coating.
Integrated circuit (IC) technology has been advanced significantly over the last 40 years. The steady progress is critically dependent on the development of optical lithography. However, optical lithography is now facing a number of challenges for generating extremely fine patterns. In addition to the optical solution, electron beam lithography is one of the promising alternatives for high-resolution patterning. In this thesis, we study and address the proximity effect that is an important issue in e-beam lithography.
The first subject is e-beam lithography proximity effect correction and we introduce the experimental approach to discuss it. By fitting the experimental results base on the double Gaussian model, it gives the α, β and η scattering parameters. We build a transfer layer to transfer the patterns on the silicon wafer, and reduce the proximity effect parameters plus dose correction to give the accurate pattern design.
The reflectance of the surface plays an important role to all semi-conduct devices that drive by incident light as well as solar cell. For this reason, we must use the anti-reflection layer to increase the penetration of the incident light at the cell surface.
The secondary subject is coating polymer on the wafer and then deal with surface by plasma. We use AFM and SEM to see the top view for researching in the reduction of reflection.

第一章 緒論	1
1-1 微影技術發展現況	1
1-2抗反射層的應用	3
1-3論文架構	4
第二章 理論與文獻回顧	5
2-1 電子束微影簡介	5
2-1.1電子束微影發展過程	5
2-1.2 電子束曝光系統	5
2-1.2.1 原理	5
2-1.2.2 電子源	6
2-1.2.3 電子光學圓柱	7
2-1.2.4 電磁透鏡	8
2-1.2.5 電子射束偏折系統	9
2-1.2.6 電子射束掃描方式	9
2-1.2.7 晶圓平台移動方式	10
2-1.2.8 電子束照射形狀	11
2-1.3 電子束微影系統常見問題	12
2-1.3.1圖形失真問題	12
2-1.2.2 充電效應	14
2-1.3.3加熱效應	14
2-1.4 電子束鄰近效應	14
2-1.4.1 電子束鄰近效應成因	14
2-1.4.2 電子束鄰近效應模型與參數	16
2-1.4.3電子束鄰近效應參數求取方法與分析	22
2-1.4.4 電子束鄰近效應修正法	23
2-2 電漿處理技術	26
2-2.1電漿表面現象	27
2-2.2電漿表面改質技術	28
2.3 抗反射層	29
2-3.1原理	29
2-3.2太陽能電池的抗反射結構	30
第三章  實驗	32
假設	32
3-1 電子束微影鄰近效應修正	32
3-1.1 實驗目的	32
3-1.2 實驗藥品	32
3-1.3 實驗設備	33
3-1.4 實驗流程圖	35
3-1.5 實驗步驟	36
3-1.5.1 選取NEB-22A4為本次實驗使用光阻。	36
3-1.5.2 圖形與尺寸設計[43]	36
3-1.5.3 晶圓清洗	36
3-1.5.4 電子束微影製程	37
3-1.5.5 電子束鄰近效應參數求取	38
3-1.5.6 電子束鄰近效應軟體修正	40
3-1.5.7 porous oxide的製備	40
3-1.5.8 建立轉移層	41
3-1.5.9第2次電子束微影製程與電子束鄰近效應參數求取及修正	41
3-1.5.10 蝕刻特性量測	42
3-1.5.11 定義圖案於silicon wafer	42
3-1.5.12 觀察轉移效果	43
3-2 電漿處理高分子材料製備抗反射層	44
3-2.1 實驗目的	44
3-2.2 實驗藥品	44
3-2.3 實驗設備	44
3-2.4 實驗流程圖	45
3-2.5 實驗步驟	45
3-2.5.1 旋塗BA-m benzoxazine於silicon晶圓與quartz晶圓	45
3-2.5.2 去除溶劑	45
3-2.5.3表面改質	45
表3.3 高分子表面改質參數	46
3-2.5.4 交聯BA-m benzoxazine	46
3-2.5.5 薄膜厚度量測	47
3-2.5.6 反射率與穿透率量測	47
3-2.5.7 粗糙度觀測	47
3-2.5.8 形貌觀測	47
第四章 結果與討論	48
4-1 鄰近效應修正分析	48
4-1.1 Silicon wafer曝光結果	48
4-1.1.1 蝕刻後線寬變化	48
4-1.1.2 鄰近效應參數計算結果	48
4-1.1.3 利用PROXECCO軟體修正後結果	49
4-1.1.4 利用圖形修正結果	49
4-1.2 轉移層厚度分析	57
4-1.3 孔隙二氧化矽孔隙率分析	58
4-1.4 各薄膜蝕刻速率	59
4-1.4.1 不同轉移層與光阻蝕刻選擇比	60
4-1.4.2 Silicon與不同轉移層蝕刻選擇比	61
4-1.5 各轉移層均勻性分析	61
4-1.6 沉積或旋塗轉移層後鄰近效應參數計算結果	62
4.1.7 建立轉移層並進行PROXECCO修正後曝光結果分析	63
4.1.8 蝕刻後轉移效果分析	65
4.1.9 增加Porous oxide 厚度	66
4-2抗反射薄膜分析	91
4-2.1各轉移層均勻性分析	91
4-2.2 反射率與穿透率分析	91
4-2.3 粗糙度分析	93
4-2.4 表面形貌分析	98
第五章結論	104
5-1實驗結論	104
5-1.1電子束鄰近效應修正	104
5-1.2電漿處理高分子材料製備抗反射層	104
5-2未來展望	104
5-2.1電子束鄰近效應修正	104
5-2.2電漿處理高分子材料製備抗反射層	105
參考文獻	106

                                

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