銅銦鎵硒(CIGS)薄膜太陽能電池為最具有量產潛力之一的材料，其效率高達20.1%，在薄膜太陽能電池中最為突出。但是真空製程會有成本過高、不容易大量生產等問題，近來如何在非真空的情況下鍍製CIGS，以降低生產成本成為研究重點之一。
本文利用非真空的方法，並且不同於一般需要在熱退火過程中不間斷地補充Se元素來硒化，更能夠降低整體的生產成本。把Cu2S、In2Se3、Ga與Se混和調製成CIGS前驅物溶液，在大氣下放置自行設計的石墨載具後，使其在快速熱退火中自行有硒化效果，時間僅需3分鐘，即可形成黃銅礦結構的CIGS。
另外，為了取代會有重金屬汙染問題的硫化鎘(CdS)，我們利用化學水浴沉積法來鍍製硫化鋅(ZnS)薄膜，接著在已經鍍有CIGS吸收層，基板面積大小為0.8cm2的不銹鋼薄片上沉積ZnS/i-ZnO/ITO，得到效率為3.926%的薄膜太陽能電池。

CIGS is the material that has the best potential for the development of thin film solar cells. The 20.1% efficiency for CIGS is the new world record. However, the high vacuum processes needed for production are too expensive and thus not suitable for large scale production. The development of a non-vacuum process is necessary.
In this work, we fabricate Cu(In,Ga)(S,Se)2 absorbers layers by a non-vacuum spray process without external selenization, and it took only 3 minutes to reach the chalcopyrite structure in the Rapid Thermal Annealing (RTA). Besides, we strive to replace CdS with ZnS. The Stainless / CIGS/ ZnS/ ZnO/ITO solar cells with efficiency of 3.926 %.

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