本論文以被動電路微小化與積體化為目標，提出以差動及雙頻差動橋式T線圈做為基本組件，應用於微小化寬頻及雙寬頻鼠競耦合器、共模態帶止濾波器器與吸收式共模態帶止濾波器之設計。於電路實現上，氮化鎵(GaN)、砷化鎵(GaAs)與積體被動元件(IPD)等具有高整合度之製程，有效達成電路微小化的設計目標。
論文首先提出新式微小化寬頻及雙寬頻鼠競耦合器，並以IPD製程實現。寬頻鼠競耦合器於中心頻率2.45 GHz下之電氣尺寸僅為0.0187〖 λ〗_0×0.0285〖 λ〗_0，而雙寬頻鼠競耦合器中心頻率為2.45 GHz及5.5 GHz，於兩中心頻率下之尺寸分別為0.0217〖 λ〗_0×0.0321〖 λ〗_0 及0.0488〖 λ〗_0×0.0721〖 λ〗_0，均較既有設計大幅縮小。
其次，提出數種新式共模態帶止濾波器設計皆以差動橋式T線圈為基本組件，阻抗皆為100 Ω，其中以積體被動元件製程實現的寬頻共模帶止濾波器，其群延遲為140 ps，差模頻寬為0至10 GHz，共模的操作頻率為3.57 GHz至9.18 GHz，止帶的抑制效果皆大於20 dB，在止帶頻率下的尺寸為0.03969 x 0.081585 λ_0^2。
接續以積體被動元件製程實現吸收式共模帶止濾波器，差模阻抗為100 Ω，群延遲為160 ps，中心頻率為2.4 GHz，中心頻率下的尺寸僅為0.01488 λ0 x 0.03176 λ0，止帶為2.32 至 2.63 GHz，抑制效果大於10 dB。
上述應用電路證實差動及雙頻差動橋式T線圈架構的確能對被動電路面積縮減十分有效，實現上亦十分簡便。

Abstract
In this thesis, very compact integrated passive circuits with high performance are presented. Today, the wireless communication system for multi-band and wide-band is increasing. Therefore, more and more multi-band and wide-band circuit of the basic components or subsystem design concept was presented in the recent year. And the electromagnetic interference (EMI) or RF interference (RFI) issues are important, too. Thus, using a common mode filter to alleviate electromagnetic interference (EMI) or RF interference (RFI) becomes a crucial technique for optimizing the performance of high-speed differential systems. However, the major bottleneck of the size reduction of active and passive microwave circuits is the requirement of multiple transmission lines with given electrical length. The traditional bridge-T coil will be equivalent to the transmission line, but only for single-frequency applications. In this work, the differential and dual-band differential bridged-T coils are used to replace the conventional bridged-T coil, can be used in dual-band microwave passive or more balance circuit design, and while achieving the purpose of minimization. The differential and dual-band differential bridged-T coils can be implemented using inductor and metal-insulator-metal (MIM) capacitor in GaN semiconductor and GaAs semiconductor IC process or Integrated Passive Device (IPD) process to achieve very compact size. It is applied to the design of Miniature wide band and dual wide-band rat-race couplers, common mode band-stop filters (CMF), and an absorptive common mode band-stop filter (ACMF).
First of all, the proposed Miniature wide band and dual wide-band rat-race couplers are fabricated in IPD process. The center frequency of the wide band rat-race coupler is at 2.45 GHz. The circuit size of Miniature wide band rat-race coupler is 0.0187〖 λ〗_0×0.0285〖 λ〗_0 at 2.45 GHz. And the center frequency of the dual wide-band rat-race coupler is at 2.45 GHz and 5.5 GHz. The circuit size of Miniature dual wide-band rat-race coupler is 0.0217〖 λ〗_0×0.0321〖 λ〗_0 at 2.45 GHz, 0.0488〖 λ〗_0×0.0721〖 λ〗_0 at 5.5 GHz.
Second, the proposed Miniature CMFs were fabricated in three different process. Two CMFs and two wide band CMFs were fabricated in IPD process, then the other two wide band CMFs were fabricated in GaN semiconductor and GaAs semiconductor IC process. All the circuits of above were designed with differential bridge-T coil, and their characteristic impedance were 100 Ω. At first, a wide band CMF fabricated in IPD process whose group delay was 140 ps. The operating frequency of wide band CMF was and 3.57 GHz to 9.18 GHz. The circuit size was 0.03969 x 0.081585 λ_0^2 at the center of the operating frequency. And a wide band CMFs fabricated in GaAs semiconductor IC process whose group delay was 160 ps. The operating frequency was 2.35 GHz to 10 GHz. The circuit size was 0.033 x 0.0452 λ_0^2 at the center of the operating frequency.
Finally, the proposed Miniature ACMF was fabricated in IPD process. The characteristic impedance was 100 Ω, and the group delay was 160 ps. The center frequency of Miniature ACMF was 2.4 GHz. The circuit size of Miniature ACMF is 0.01488 λ0 x 0.03176 λ0 at 2.4 GHz. Compared with current designs, the above circuits are smaller in size. The effectiveness of differential and dual band differential bridged-T coils on the design of miniaturized on-chip passive microwave circuit is also validated through proposed design examples.

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