本文的實驗是研究氮離子佈植於n型氮化鎵的特性研究，以不同的佈植濃度1e11、1e12、1e13、1e14、1e15cm-2之疊加，造成5e16、5e17、5e19cm-3之佈植濃度，佈植在濃度為3.3e16cm-3、1.4e17cm-3、2.8e18cm-3之n型氮化鎵試片上﹔藉以了解氮離子佈植後的氮化鎵試片特性。利用光激發螢光光譜(photoluminescence)的量測顯示，氮離子之佈植不會增進氮化鎵之發光機制﹔由拉曼(Raman) 量測顯示，在離子佈植濃度超過5x1017cm-3時，佈植之表面才會對於拉曼光譜產生影響，藉由A1(LO)模之變化發現，氮離子佈植後在熱處理之後會填補與A1(LO)相關之缺陷。
在電性方面，由蕭特基二極體之內阻計算可得在離子佈植之後電阻明顯的隨佈植濃度上升而上升，在5e19cm-3之佈植量可造成1e10之高電阻，而且在750oC有熱穩定性。由電容-電壓(C-V)量測結果顯示，在低濃度氮離子佈植至低濃度之試片上可以在表面增加電子的濃度，經由DLTS之量測結果，發現是產生高濃度氮的空缺(VN)所導致。而在高濃度之佈植，不同濃度試片會在750oC 30分鐘的加熱後在拉曼光譜中360cm-1位置會有一種新振動模式產生，經由DLTS之分析結果我們認為是與氮化鎵結構相關之缺陷，其能階位置在導電帶以下0.465eV，缺陷截面積3.5e-17cm2。

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