近年來三五族發光材料在製備發光二極體上有廣泛的應用，包含面板，顯示器
背光模組，醫療元件等。而發光二極體在異質外延層的生長技術一直是影響半導體成
果的最大挑戰。
在本研究中，我們以螢光光譜分析半極性{10-11}氮化銦鎵多重量子井的晶格特性。此多重量子井以有機金屬化學氣相沉積法成長於(100)矽基板上，並以氧化鋅奈米
柱作為緩衝層，以得到{10-11}的半極性磊晶面。
在螢光光譜的分析中，我們利用變溫、變功率，以及時間解析的方式，來研究此半極性奈米量子井的銦含量分佈、缺陷密度等材料特性。從變溫螢光光譜與變功率的螢光光譜中，此氮化銦鎵量子井充分展示“s形發光曲線” 及“量子史塔克效應”，顯示銦自聚集形成的量子點結構，其內部量子效率約為66%。在時間解析的光譜中，我們發現半極性量子井中的載子周期約0.5 ns，小於傳統極性面的3.7 ns，這是因為氧
化鋅奈米柱能有效減少差排密度，並形成半極性氮化銦鎵磊晶面，減緩量子史塔克效
應，因而展現較高的發光效率。

In recent years, III-nitride compounds exhibit excellent properties in wide applications of light-emitting diodes, displays, backlight modules, medical components, etc. Understanding the crystal properties of InGaN quantum wells is the key step to further improve the performances of nitride-based emitters.
In this research, we studied nanostructured semipolar {10-11} InGaN/GaN multiple quantum wells (MQW) using temperature-dependent, power-dependent and time-resolve photoluminescence (PL) spectra. The semipolar MQW were grown on (100) Si substrates by metal-organic chemical vapor deposition(MOCVD). To relieve the huge lattice strain between Si and GaN and to attain the semipolar crystal plane, ZnO nanorods were employed as the buffer layer.
From the results of temperature and power-dependent PL studies, the semipolar MQW display clear S-shape spectra and varied quantum-confined Stark effect (QCSE), indicating a quantum-dot-like structure due to indium segregation. The internal quantum efficiency is estimated to be 66%. From time-resolve PL, the carrier lifetime in the semipolar MQW is around 0.5 ns, much shorter than that (3.7 ns) of the conventional planar polar MQW. The result is attributed to the alleviated strain brought by the ZnO nanorods, as well as the mitigated QCSE.

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