本論文利用標準CMOS製程實現矽光檢測器，當入射光波長為650-nm時，由於光的吸收深度較接近元件表層的操作區，而基板產生之擴散載子可減少對頻率響應的影響。透過Silvaco公司之二維元件模擬軟體研究，相較於入射光波長為850-nm，又用於波長為650-nm時，可改善擴散載子造成之頻率響應滑落(roll-off)的情形，進而提升3-dB頻寬。同時針對不同的元件結構設計，分別為水平式之累崩光檢測器以及具Deep n-well之光檢測器，分別將其應用於不同入射光波長且操作在累崩區來做比較。最後利用0.25 µm標準CMOS 高壓製程實現多層PN接面之矽光檢測器，並針對不同深度之PN接面作進一步的分析，透過不同波長的光具有不同吸收深度之特性，使得不同深度之PN接面對應不同波長具有特性的差異。另外也利用光脈衝響應之量測，研究不同元件對脈衝的反應，分析長尾巴效應(long tail effect)的影響。

This study presents photodetectors (PDs) implemented in standard CMOS technology. Due to the penetration depth of the 650-nm-wavelength light into Si is close to the depth of the depletion in the surface p-n diodes, which can reduce the frequency response of the PD degraded by the slow diffusion carriers. Silvaco TCAD simulation was used to verify that the diffusion roll-off in PD could be improved by reducing the diffusion component of photo-current at 650-nm wavelength. Furthermore, this study compared different device structures including avalanche photodetectors and photodetectors with deep n-well implantation. Finally, the photodetectors with different p-n junction depth implemented in standard 0.25 µm CMOS high voltage technology are discussed. The different wavelength performance of photodetectors with different p-n junction depth results from the characteristics of the penetration depth of light in silicon is wavelength-dependent. Besides, long tail effect was analyzed by the pulse measurement.

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