| 研究生: |
李坤穆 Kun-Mu Li |
|---|---|
| 論文名稱: |
溶膠-凝膠法製備超疏水性薄膜材料 |
| 指導教授: |
陳暉
Hui Chen |
| 口試委員: | |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 化學工程與材料工程學系 Department of Chemical & Materials Engineering |
| 畢業學年度: | 92 |
| 語文別: | 中文 |
| 論文頁數: | 89 |
| 中文關鍵詞: | 溶膠凝膠法 、超疏水 、接觸角 |
| 外文關鍵詞: | contact angle, super hydrophobic, sol-gel |
| 相關次數: | 點閱:6 下載:0 |
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本研究利用溶膠-凝膠法(sol-gel process)來製備超疏水薄膜材料。分別探討前置物法(precursor)與同時聚合法(in-situ)兩種反應系統對所製備之薄膜材料之影響。 在前置物系統中,將個別種類矽烷、乙醇及水在酸性環境下進行水解-縮合反應後再加入二氧化矽粉體進行混合,以旋轉塗佈方式(spin-coating)塗佈於玻璃基材上,在不同反應溫度及反應時間下進行反應並藉由改變TEOS/矽烷比例來探討表面性質之變化。 在同時聚合系統中,利用乙醇將個別粒徑之SiO2粉體分散後,藉由改變TEOS/矽烷比例與改變矽烷種類、加水在酸性環境下進行水解-縮合反應,以旋轉塗佈方式(spin-coating)塗佈於玻璃基材上,並在不同溫度下進行反應來探討薄膜表面性質之變化。 將實驗所得之薄膜材料進行接觸角(Contact Angle)、掃瞄式電子顯微鏡(SEM)、原子力顯微鏡(AFM)、紫外光/可見光分光光譜儀(UV)等儀器分析,來探討薄膜材料表面之接觸角變化及表面結構與接觸角、硬度、透明度之關係。 由實驗結果得知,以前置物法所製備之超疏水薄膜材料,其接觸角可達158°,藉由TEOS的加入可提升薄膜硬度至3H。但以前置物法製備薄膜材料需兩步驟完成,進而考慮一步驟反應,即所謂同時聚合法。而以同時聚合法所製備之超疏水薄膜材料方面,在以親水性之SiO2-B粉體之反應系統,反應後其接觸角可高達160°,最佳硬度可達6H。最佳配方之接觸角為158°,硬度3H。 透明度方面,利用導入平均為252.1 nm SiO2粉體(SiO2-B)並改變反應液濃度及塗佈轉速,可得接觸角158°,平均穿透度76.5%之高透明度超疏水性薄膜材料。3
1. K. Tsujii, T. Yamamoto, T. Onda, S. Shibuichi, Angew. Chem., 1997, 109, 1042.
2. A. Nakajima, A. Fujishima, K. Hashimoto, T.Watanabe, Adv.Mater. 1999, 11, 1365.
3. M. Morra, E. Occhiello, F. Garbassi, Langmuir 1989 ,5, 872.
4. Y. Kunigi, T. Nonaka, Y.-B. Chong, N. Watanabe, J. Elec- troanal. Chem. 1993, 353, 209. 5. A. Nakajima, K. Abe, K. Hashimoto, T. Watanabe, Thin Solid Films 2000, 376, 140.
6. B.S. Hong, J.H.Han, S.T. Kim, Y.J. Cho, M.S. Park, T. Dolukhanyan, C. Sung, Thin Solid Films 1999, 351, 274.
7.H. Li, X. Wang, Y. Song, Y. Liu, Q. Li, L. Jiang, D. Zhu, Angew. Chem.2001, 113, 1793 .
8. K. Tadanaga, N. Katata, T. Minami, J. Am. Ceram. Soc. 1997, 80, 3213.
9. A. Hozumi, O. Takai, Thin Solid Films 1997, 303 , 222.
10.W. Chen, A. Y. Fadeev, M. C. Hsieh, D. Kner, J. Youngblood,T. J. McCarthy, Langmuir 1999, 15, 3395 .
11.Miwa, M., Fujishima, A., Hashimoto, K.; Watanabe, T. Langmuir 2000, 16 , 5754 . 12.Nakajima, A.; Hashimoto, K.; Watanabe, T. Langmuir 2000, 16,7044 .
13. Barthlott,W., Neinhuis, C. Planta.1997,202,1.
14 Wenzel, R. N. Ind. Eng. Chem.1936, 28, 988. 15.Cassie, A. B. D.; Baxter, Trans. Faraday Soc.1944, 40, 546.
16.S. Shibuichi, T. Onda, N. Satoh, K. Tsujii, J. Phys. Chem. 1996, 100,86,19512.
17. T. Onda, S. Shibuichi, N. Satoh, K. Tsujii, Langmuir 1996, 12 , 2125.
18.H. Li, X. Wang, Y. Song, Y. Liu, Q. Li, L. Jiang, D. Zhu, Angew. Chem.Int. Ed.2001,40, 1743.
19. L. Feng, S. Li, H. Li, J. Zhai, Y. Song, L. Jiang,D. Zhu, Angew. Chem.2002, 114, 1269.
20.L. Feng, S. Li, H. Li, J. Zhai, Y. Song, L. Jiang,D. Zhu, Angew. Chem.Int. Ed. 2002, 41,1221. 21.L. Feng, Y. Song, J. Zhai, B. Liu, J. Xu, L. Jiang, D. Zhu, Angew. Chem.2003, 115, 824.
22.L. Feng, Y. Song, J. Zhai, B. Liu, J. Xu, L. Jiang, D. Zhu, Angew. Chem. Int.Ed.2003,42, 800.
23.L. Feng, S. Li, Y. Li, H. Li, L. Zhang, J. Zhai, Y. Song, B. Liu, L. Jiang, D. Zhu, Adv. Mater. 2002, 14, 1857.
24.H. Y. Erbil, A. L. Demirel, Y. Avci, O. Mert, Science 1977, 299,1377.
25.J. Bico, U. Thiele, D. Quere, Colloids Surf. A 2002, 206,41.
26.R. Wang, K. Hashimoto, A. Fujishima, M. Chikuni, E. Kojima , A. Kitamura, M. Shimohigoshi, T. Watanabe, Nature 1997, 388,431. 27. Z. Hu, Y. Chen, C.Wang, Y. Zheng, Y. Li, Nature 1998, 393, 149.
28.Wu, J.-J., Liu. S.-C. Adv. Mater.2002,14, 215.
29.Liu. R., Vertegel, A. A., Bohannan, E. W., Sorenson, T. A.; Switzer, J. A.Chem.Mater.13,508.
30.Oner. D.,McCarthy,T.J.Langmuir 2000, 16, 7777. 31.J. P. Youngblood,T. J. McCarthy, Macromolecules 1999.
32, 6800 . 32.J-Y Shiu, C-W Kuo, P. Chen, C-Y Mou, Chemistry of Materials 2004, 87,16, 561.
33.N.J. Shirtcliffe, G. McHale, M. I. Newton, C.C. Perry , Langmuir 2003, 19, 5626.
34. Shibuchi, S., Onda, T., Satoh, N., Tsuji, K., J. Phys.Chem.1996, 100, 19512.
35. Chen,W. et al., Langmuir,1999, 15, 3395. 36.Youngblood,J.P.,McCarthy,T.J,Macromolecules,
1999,32,6800.
37.Wu,Y.,Sugimura, H., Inoue,Y., Takai, Chem.Vap. Depos,2002,8, 47.
38.A. Venkateswara Rao, M. M. Kulkarni, Materials Research Bulletin, 2002, 37, 1667.
39.K. Satoh, H. Nakazumi, J. Sol-Gel Science and Technology, 2003, 27, 327.
40.S. Pilotek, H.K. Schmidt, J. Sol-Gel Science and Technology, 2003, 26, 789.
41.K. Tadanaga, K. Kitamuro, A. Matsuda, T. Minami, J. Sol-Gel Science and Technology, 2003, 26, 705.
42.A. Venkateswara Rao, Manish M. Kulkarni, D.P. Amalnerkar, T. Seth, J. Non-Crystalline Solids, 2003, 330, 187.
43.Lenz, P. Adv. Mater. 1999, 11, 1531 . 44.Izaki, M.; Omi, T.App.Phys.Lett.1996,68, 2439. 45.Swain, P. S., Lipowsky, R. Langmuir 1998,14, 6772.
46.Wolansky,G.,Marmur, A. Langmuir 1998,14, 5292. 47.Gillmor, S. D., Thiel, A. J., Strother, T. C., Smith, L. M.,Lagally,M.G.Langmuir,2000, 16, 7223. 48.Gau,H., Herminghaus,S., Lenz, P., Lipowsky, R.Science 1999,283,46.
49.Whan Cho, Jae, Il Sul, Kyung. Polymer, 2001, 42, 727.
50.G. Yamauchi, J.D. Miller, H. Saito, K. Takai, T. Ueda, H. Takazawa, H. Yamamoto, S. Nishi, Colloids Surf. A 1996, 116, 125.
51.Sun, C.-C.; Mark, J. E. Polymer, 1989,30,104. 52.Wung, C. J.; Pang, Y.; Prasad, P. N.; Karasz, F. E. Polymer,1991, 32, 605.
53.L-Davies, B.; Samoc, M.; Woodruff, M. Chem. Mater. ,1996, 8 ,2586.
54.Motakef, S.; Suratwala, T.; Roncone, R. L.; Boulton, J. M.; Teowee, G.; Neilson, G. F.; Uhlmann, D. R. J. Non-Cryst Solids,1994, 178, 31. 55.Motakef, S.; Suratwala, T.; Roncone, R. L.; Boulton, J. M.; Teowee, G.; Uhlmann, D. R. J. Non-Cryst. Solids, 1994,178 ,37.
56.Yoshida, M.; Prasad, P. N. Appl. Opt. 1996, 35, 1500.
57.Xu, C.; Eldada, L.; Wu, C.; Norwood, R. A.; Shacklette, L.W.; Yardley, J. T.; Wei, Y. Chem. Mater.1996, 8 ,2701.
58.Dave, B. C.; Dunn, B.; Valentine, J. S.; Zink, J. I. Anal. Chem., 1994,66, 1120.
59.Claude, C.; Garetz, B.; Okamoto, Y.; Tripathy, S. Mater. Lett., 1992, 14, 336.
60.詹佳樺, ”溶膠-凝膠法製備聚甲基丙烯酸甲酯/二氧化矽混成體之研究”,國立中央大學化學工程研究所碩士論文(2001)。
61.Schmidt, H. K. Mater. Res. Soc. Symp. Proc. 1984, 32 , 327.
62.Sakka, S.; Kamiya, K. J. Non-Cryst. Solids 1980, 42 , 403.
63.Brinker, C.J.; Scherer, G.W. Sol-Gel Science: the Physics and Chemistry of Sol-Gel Processing, Academic Press, San Diego, 1990.89