本論文的內容在於研究室溫下沉積的氮化矽薄膜之穩定性，並以加入雷射輔助的方式，改善氮化矽薄膜的穩定性。
以單獨的電漿化學氣相沈積法(PECVD)在室溫下沉積時，氣體分子到達基板已無多餘的能量去移動到適當的位置上，以填補沉積時所形成的縫隙及孔洞，因而形成多孔狀的非晶氮化矽氫薄膜(porous a-SiNx:H)，這些孔隙將使得空氣中的水氣得以滲入，進而破壞薄膜的結構並改變薄膜的特性，根據熱力學的觀點多孔非晶氮化矽氫薄膜(porous a-SiNx:H)中許多單獨的懸鍵處於不穩定的狀態，可能與空氣之中的其他分子進一步形成穩定的氧化態。
因此單獨的電漿化學氣相沈積法在室溫下沉積出的氮化矽薄膜具有氧化的情形，進而產生特性上的變化。在本實驗中在電漿化學氣相沈積法沉積時加入雷射的輔助，可產生具有高穩定性的薄膜，量測折射率、蝕刻速率、傅氏紅外吸收光譜、平整性、光激發光譜等方面的特性，均有良好的特性，這些特性將可對於半導體元件的鈍化層以及阻擋層有很好的應用。
在光激發光譜的研究上，我們比較室溫下單純以傳統電漿化學氣相沈積法沉積出的氮化矽薄膜與加入雷射輔助沉積出的氮化矽薄膜，結果發現以雷射去輔助沈積之薄膜具有較強的發光強度，且具有高穩定性的發光光譜，此特性使我們將來可以利用成熟的矽製程技術整合發光元件於矽晶片上。

Advantage silicon nitride by CO2 laser assisted plasma enhanced chemical vapor deposition：
low Si-H and N-H contained in a-SiNx:H film.
Low surface roughness
Prevent from moisture and oxidation
Refraction index is stable
Laser power will best assist at 40W.
Stable PL spectra and higher efficiency

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