隨著光電產業的的發展，當效能到一定瓶頸時，鈍化層的出現讓光電元件效能大幅提升，但金屬和半導體間並沒有鈍化層的存在，便有研究團隊研究出用局部開孔的方式完成鈍化，但開孔處會導致嚴重的載子復合，於是鈍化接觸的技術便應運而生。薄膜是鈍化接觸的關鍵，而當單層鈍化接觸薄膜研發到一定水準時，單層的結構已無法滿足元件的需求，於是複合結構的鈍化接觸薄膜便被提出，複合式的鈍化接觸薄膜可以比單層鈍化接觸有著更好的鈍化效果，故本研究將其應用到光偵測器，並研究其元件特性。
本研究選擇使用濕式化學氧化法的方式製備氧化矽薄膜，以調整不同參數條件，找出緻密度最高及較低漏電流的氧化矽薄膜。接著再將氮化矽薄膜覆蓋於氧化矽之上以達到複合鈍化接觸之效果。再經過快速熱退火的處理，發現在溫度500°c時，複合薄膜的鈍化效果最好，有著最高的生命週期1021.25μs、iVoc為652.4mV，而為了提升載子傳輸的效果且因為氮化矽有著較高的介電係數，便嘗試降低氮化矽薄膜的厚度，形成超薄型複合鈍化接觸薄膜。
最後將上述鈍化接觸薄膜應用於光偵測器元件中，再覆蓋上透明導電薄膜氧化銦錫提升響應度。而研究結果發現應用氧化矽1.5nm、氮化矽厚度為1.7nm所製成的複合鈍化接觸時，元件有著最佳的鈍化效果，光偵測器的暗電流可以從4.36x10-7A降低至8.25x10-9A，在850nm波長的雷射光源下，光響應度也具有0.582A/W的水準。

With the development of the optoelectronic industry, when the performance reaches a certain bottleneck, the appearance of the passivation layer greatly improves the performance of the optoelectronic components. However, there is no passivation layer between the metal and the semiconductor, some research teams have studied to complete the passivation by means of local opening. However, the opening of the hole will cause serious carrier recombination, therefore the technique of passivating contact will come into being. The thin film is the key to passivation contact. When the single-layer passivated contact film is developed to a certain level, the structure of the single layer cannot meet the requirements of the component, so the passivation contact film of the compound film is proposed. The composite passivation contact film has better passivation effect than the single-layer passivation contact, so this study applied it to the photodetector and studied its component characteristics.
In this study, we use wet chemical oxidation method to grow silicon oxide film, and we try the different parameters of wet chemical oxidation method to find the best silicon oxide film with the highest density and low leakage current. Then silicon nitride film is deposited on the silicon oxide film to achieve the effect of compound film of passivation contact. After rapid thermal annealing treatment, it is found that the compound film has the best passivation effect at 500 °C, with the highest lifetime of 1021.25μs and iVoc of 652.4mV. Then we will fabricate the devices of different silicon nitride thickness and measure their electrical properties.
Finally, the compound film of passivation contact is applied to the silicon-based photodetector. Indium tin oxide was deposited on compound films for improving the responsibility. The results show that when the compound film of passivation contact is made by using silicon oxide 1.5nm of thickness and silicon nitride 1.7nm, it has the best passivation effect, and the dark current of the photodetector can be reduced from 4.36x10-7A to 8.25x10-9A, photon responsibility of 0.582 A/W at a laser light source of 850 nm.

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