本學位論文提出使用於X頻段(9~10 GHz)通訊雷達系統的收發機放大器設計。基於近年物聯網的概念越發普及，多數系統皆需具備通訊功能，因此收發系統的耗電量也越發被重視。有鑒於此，設計方面著重於在提高增益的同時也須降低晶片功耗。

本論文研發第一個晶片為用於X頻段發射機的功率放大器設計，此顆晶片為使用穩懋0.15 μm GaN製程所製作的功率放大器，電路採用兩共源極電路串聯的架構增加其增益，其小訊號增益為25 dB，飽和輸出功率超過2 W，中心頻的效率為28%，而晶片面積為2.35×1.75 mm2。

本論文研發第二個晶片為用於X頻段接收機的低雜訊放大器設計，此顆晶片為使用穩懋0.15 μm GaAs製程所製作的低雜訊放大器，電路架構採用電流再利用(Current-Reused)，以架構降低其耗電量，電路最大增益為20 dB，雜訊最小值為1.35 dB，量測功耗為24 mW，晶片面積為1.11×1.1 mm2。

Novel designs of transmitting and receiving amplifiers applied for X-band (9~10GHz) radar communications are proposed, investigated, implemented, measured, tested and verified in this thesis. With rapidly growing applications of the Internet of Things (IoT) concept, most applications are equipped with communication functionality, thus emphasizing the importance of power consumption reduction in transceiver systems. Accordingly, the designs proposed in this thesis inevitably focus on increase of power gain with reduction of overall power consumption of a single chip.

The first chip designed in this thesis is a power amplifier working in a X-band transmitter. This chip is fabricated using a 0.15 μm GaN process from WIN. The circuit employs a cascade configuration to increase its gain. Its small-signal gain is up to 25 dB, with a saturation output power exceeding 2 W, and the best efficiency is 30%. The chip occupies an area only of 2.35×1.75 mm².

The second chip is a low-noise amplifier designed for X-band receivers. This chip is fabricated using a 0.15 μm GaAs process from WIN. The circuit architecture adopts a Current-Reused structure to reduce power consumption. The circuit gain is 20 dB, with a minimum noise figure of 1.5 dB. The measured power consumption is 24 mW, and the chip occupies an area only of 1.11×1.106 mm²

[1]X. Chen, C. -H. Chen, R. Lee, D. C. Chen and D. Y. Wu, “Direct deembedding of noise factors for on-wafer noise measurement”, IEEE Transactions on Microwave Theory and Techniques, vol. 65, no. 3, pp. 916-922, March 2017.
[2]W. C. Huang, C. Chiong, and H. Wang, “A fully-integrated S-band differential LNA in 0.15-μm GaAs pHEMT for radio astronomical receiver”, in Proc. IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), pp. 1-3, Melbourne, VIC, 2018.
[3]R. Mancini, and B. Carter, “Op Amps for Everyone Third Edition”, Texas Instruments, Chapter 10 Op Amp Noise Theory and Applications, 2009.
[4]H. Nyquist, “Thermal agitation of electric charge in conductors”, Phys. Rev., vol. 32, no. 1, pp. 110–113, July 1928.
[5]X. Ding, G. Niu, A. Zhang, W. Cai, and K. Imura, “Experimental extraction of thermal noise γ factors in a 14-nm RF FinFET technology”, in Proc. 2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), San Diego, CA, USA, 2021, pp. 25-27.
[6]G. Gonzalez, “Microwave Transistor Amplifiers Analysis and Design”, Prentice Hall Upper Saddle River, New Jersey, 1997.
[7]A. H. Aljuhani, T. Kanar, and G. M. Rebeiz, “A packaged single-ended K-band SiGe LNA with 2.14 dB mean noise figure”, in Proc. IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), CA, pp. 198 201, San Diego, 2018.
[8]S. Rasidah, A. Rasmi, M. H. Siti Maisurah, A. I. A. Rahim, and M. R. Yahya, “15 GHz medium power amplifier design for Ku- band applications”, in Proc. IEEE Regional Symposium on Micro and Nano Electronics, pp. 108-111, Kota Kinabalu, 2011.
[9]M. Parvizi, K. Allidina, and M. N. El-Gamal, “A Sub-mW, ultra-low-voltage, wideband low-noise amplifier design technique”, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 23, no. 6, pp. 1111-1122, June 2015.
[10]Y. J. Lin, S. S. H. Hsu, J. D. Jin, and C. Y. Chan, “A 3.1–10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused technique”, IEEE Microwave and Wireless Components Letters, vol. 17, no. 3, pp. 232-234, March 2007.
[11]A. Salimath, P. Karamcheti, and A. Halder, “A 1 V , sub-mW CMOS LNA for low-power 1 GHz wide-band wireless applications”, in Proc.2014 27th Int. Conf. on VLSI DESIGN and 2014 13th Int. Conf. on Embedded Systems, Mumbai, India, 2014, pp. 460-465 .
[12]Ç.Yağbasan, and A.Aktuğ, “Robust X-band GaN LNA with integrated active limiter”, in Proc. 2018 13th European Microwave Integrated Circuits Conference (EuMIC), pp. 1205-1208, 2018.
[13]P. Schuh, and R. Reber, “Robust X-Band low noise limiting amplifiers”, in Proc. IEEE Int. Microwave Symp. Dig., Seatle, USA, June. 2013, pp. 1–4.
[14]T. Kanar, and G. M. Rebeiz, “X- and K-band SiGe HBT LNAs with 1.2- and 2.2-dB mean noise figures”, IEEE Trans. Microw. Theory Techn., vol. 62, no. 10, pp. 2381–2389, Oct. 2014.
[15]C. Wang, K. Y. Chen, Y. L. Lee and C. H. Li, “A X-/Ku-band QFN-packaged GaAs LNA supporting dual-polarization signal reception”, in Proc.2019 IEEE Asia-Pacific Microwave Conference (APMC), pp. 1521-1523, 2019.
[16]邱煥凱、林貴城編著，ADS應用於射頻功率放大器設計與模擬，國立清華大學出版社，台灣，新竹，05，2014，第47-50頁。
[17]C. M. Li, M. T. Li, K. C. He, and J. H. Tarng, “A low-power selfforward-body-bias CMOS LNA for 3-6.5-GHZ UWB receivers”, IEEE Microw. Wireless Compon.Lett., vol. 20, no 2, pp. 100-102, Feb. 2010.
[18]S. C. Crpps, “RF Power Amplifer for Wireless Communications”, Artech House, Mar. 1999.
[19]S. Pandey, and J. Singh, “A 0.6 V low-power and high-gain ultrawideband low-noise amplifier with forward-body-bias technique for low voltage operations”, IET Microwaves Antennas Propagation, vol. 9, no. 8, pp728-734, 2015.
[20]M. Onur , A Karakuzulu, A Gündel, F Kocer and O A Civi, “ Design and implementation of an encapsulated GaN X-band power amplifier family”, in Proc.2018 13th European Microwave Integrated Circuits Conference(EuMC), pp. 90-92, 2018.
[21]S. Pavlidis, A. Ulusoy and J. Papapolymerou, “A 5.4W X-band gallium nitride (GaN) power amplifier in an encapsulated organic package”, in Proc.2015 European Microwave Conference (EuMC), pp. 789-792, 2015.
[22]S. Harsha, G. Vardhan, D. Pathak, M. Mendhe and A. Dutta, “15W hybrid GaN power amplifier through microstrip radial stub 4W GaN MMIC for X-band radar applications”, in Proc. 2020 IEEE VLSI Device, Circuit and System Conference (VLSI-DCS), pp. 474-479, 2020.
[23]A. Dani, M. Coffey and Z. Popovi´-c, “4W X-band high efficiency MMIC PA with output harmonic injection”, in Proc.2014 9th European Microwave Integrated Circuit Conference, pp. 389-392, 2014.