| 研究生: |
蔡旻倪 Min-Ni Tsai |
|---|---|
| 論文名稱: |
異質接面雙極性電晶體VBIC模型建立及其功率特性模擬 Heterojunction Bipolar Transistor VBIC Model Establish and Power simulation |
| 指導教授: |
綦振瀛
Jen-inn Chyi |
| 口試委員: | |
| 學位類別: |
碩士 Master |
| 系所名稱: |
資訊電機學院 - 電機工程學系 Department of Electrical Engineering |
| 畢業學年度: | 91 |
| 語文別: | 中文 |
| 論文頁數: | 55 |
| 中文關鍵詞: | 異質接面雙極性電晶體 、功率特性 |
| 外文關鍵詞: | VBIC model, HBT |
| 相關次數: | 點閱:11 下載:0 |
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本論文主要是針對異質結構雙載子電晶體建立其VBIC model。
在大訊號模型建立上,我們利用ICCAP量測系統量測所需要的圖形如:順向gummel-plot、逆向gummel-plot、共射極直流輸出特性曲線…等;在接面電容量測上,將8510當作一個C-V量測系統;在小訊號S-參數模型建立上,同樣利用8510向量網路分析儀來量測S-參數。
在量測完所需要的圖形之後,利用ADS模擬軟體將模型參數萃取出來,並建立出完整的VBIC model,利用該模型模擬元件包括直流、交流…等特性,確認模型參數是否正確、元件在線性特性上的表現為何…等。 此外,模擬亦包括了自我加熱效應的部分。
其次,分別量測元件在不同溫度下的直流工作情形,建立出VBIC model中關於溫度的相關參數,目的是為了使得該元件不論是在何種溫度操作下,都能保持其模型穩定性,不會有誤差產生。
最後,利用負載-拉移量測找出元件最大輸出功率點為何,並進而量測出在不同輸入功率下所對應的輸出功率,並得到元件的功率增益及功率附加效率,以得知元件在功率特性的表現為何。 接著再利用所建立的VBIC model做關於功率特性方面的模擬,以得知大訊號模型是否能正確模擬元件的非線性特性。 在量測與模擬上,皆包含了固定偏壓與不同偏壓的部分。
參 考 資 料
[1] Colin McAndrew, et al. ”VBIC95:An Important Vertical, IC Bipolar Transistor Model” IEEE BCTM 1995
[2] Colin McAndrew, et al. ”VBIC95,The Vertical Bipolar Inter-Company Model” IEEE Journal of Solid-State Circuit Vol.31 no.10 Oct 1996
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[10] Morten Olavsbråten “A Practical Method of Parameter Extraction for the VBIC Model used on GaAs HBT”GAAS2000 Conference Proceeding
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[12] Steve P. Marsh, Senior Member, IEEE “Direct Extraction Technique to Derive the Junction Temperature of HBT’s Under High Self-Heating Bias Condiction” IEEE TED, vol.47 no.2 Feb 2000
[13] Marcel Tutt, Motorola DigitalDNA Lab. “GaAs Based HBT Large Signal Modeling Using VBIC for Linear Power Amplifier Applications” IEEE BCTM3.2
[14] S.V.Cherepko, J.C.M.Hwang “VBIC Model Applicability and Extraction Procedure for InGaP/GaAs HBT” Proceeding for APMC2001, Taipei
[15] W.J.Kloosterman “Comparison of Mextram and the Vbic95 bipolar transistor model” Philips Electronics N.V. 1996
[16] IC-CAP Toolkit for VBIC
[17] IC-CAP 2001 High Frequency Model Tutorials
[18] IC-CAP 2001 Nonlinear Device Models
[19] Diploma Thesis “Modeling the Heterojunction Bipolar Transistor with VBIC” Jan. 2000
[20] Sergey Cherepko and James Hwang ”Model Extraction Procedure for InGaP/GaAs HBTs”
[21] J.J. Liou and J.S. Yuan“Physical-based lrge–signal heterojunction bipolar transistor model circuit simulation”IEE Proceedings-G, vol.138 no.1 Feb. 1991
[22] Apostolos Samelis and Dimitris Pavlids“Analysis of the Large-Signal Characteristics of Power Heterojunction Bipolar Transistors Exhibiting Self-Heating Effects”IEEE trans. on MTT, vol.45 no.4 April 1997