透明導電氧化層(Transparent Conductive Oxide, TCO)具有良好的光穿透性及導電性，經常被應用於太陽能電池上。而藉由調變TCO之功函數使TCO與半導體之間的能帶較為匹配，可有效提升太陽能電池之填充因子(Fill Factor, FF)。此外，使用不同機台沉積與TCO接觸之射極層，因具備不同薄膜特性，其鈍化效果(passivation)及吸收係數(absorption)分別對太陽能電池之開路電壓(open circuit voltage, VOC)及短路電流密度(short current, JSC)有不同的影響。
本研究第一部分利用模擬軟體AMPS-1D探討ITO功函數對異質接面太陽能電池之影響，接著使用射頻磁控濺鍍機(RF magnetron sputter)製備材料為氧化銦錫(ITO)的TCO薄膜，藉由使用紫外光臭氧清洗機(UV-Ozone stripper)調變ITO之功函數範圍為4.5eV至5.0eV，並將調變過後的ITO薄膜應用於電子迴旋共振化學氣相沉積法(Electron Cyclotron Resonance Chemical Vapor Deposition, ECR-CVD)成長的矽基太陽能電池上，以探討其對電池各項光電特性與轉換效率之影響。研究結果顯示，提升ITO之功函數至5.0eV適用於與射極層接觸之正面ITO，能有效將太陽能電池之填充因子從0.535提升至0.594，轉換效率從9.76%提升至12.14%；而降低ITO之功函數至4.5eV適用於與背表面電場接觸之背面ITO，能有效將填充因子從0.53提升至0.54，轉換效率從10.9%提升至11.22%。
本研究第二部份使用不同設備探討不同結構的異質接面矽晶太陽能電池，及其光電特性之變化。結果顯示使用PECVD沉積的異質接面矽晶太陽能電池之射極層能獲得較好的鈍化效果，其開路電壓能提升2.98%；而使用ECR-CVD沉積的異質接面矽晶太陽能電池之射極層能具有較低的電阻率及吸收，其短路電流能提升9.25%，轉換效率從8.28%提升至11.53%。

Transparent conductive oxide layer (TCO) with good optical transmittance and conductivity, is often applied to the solar cell. Through the modulation of work function of TCO to align energy band between TCO and semiconductor, enable to improve the fill factor (FF) of the solar cell effectively. In addition, deposition of emitter layer with different machines, its passivation and absorption coefficient effect open-circuit voltage (VOC) and short circuit current density (JSC) of the solar cell respectively because of different film properties
In the first part, we use simulation software AMPS-1D to investigate the effect of the work function of ITO on heterojunction with intrinsic thin layer (HIT) solar cells. And then fabricate indium tin oxide (ITO) of the TCO film with RF magnetron sputtering process. Through different UV-ozone stripper process temperature and time, modulate the work function of ITO from 4.5 eV to 5.0 eV, and applied the result to silicon based solar cells deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD), in order to investigate its effect on optical properties, electrical properties and conversion efficiency of the solar cells. The results show that increase the work function of ITO to 5.0 eV is applied to the front ITO contacted with the emitter, will effectively improve fill factor from 0.535 to 0.594, the conversion efficiency from 9.76 % to 12.14 %; and decrease the work function of ITO to 4.5 eV is applied to the back ITO in contacted with the back surface field, will effectively improve the fill factor from 0.53 to 0.54, the conversion efficiency from 10.9 % to 11.22 %.
In the second part, we investigate the different structures of heterojunction silicon solar cells with different equipment, and its variation of optical and electrical characteristics. The results show that the emitter of heterojunction silicon solar cell deposited with PECVD get better passivation effect, improving the open circuit voltage 2.98%; and deposited with ECR-CVD have a lower resistivity and absorption, improving the short circuit current 9.25%. And improve the conversion efficiency from 9.25 % to 11.53 %.

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