跳到主要內容

簡易檢索 / 詳目顯示

回結果列表
研究生： 劉信忠
Hsin-Chung Liu
論文名稱： 應用於光通訊1.55um波段P-I-N及M-S-M光偵測器之設計與製作
Design and fabrication of P-I-N and M-S-M photodetector in the 1.55 um wavelength optical communication application
指導教授： 詹益仁
Yi-Jen Chan
口試委員:
學位類別： 碩士
Master
系所名稱： 資訊電機學院 - 電機工程學系
Department of Electrical Engineering
畢業學年度： 92
語文別： 中文
論文頁數： 57
中文關鍵詞： 波導 、邊耦合 、光偵測器 、P-I-N 、M-S-M
外文關鍵詞： M-S-M, P-I-N, waveguide, edge-couple, photodetector
相關次數： 點閱：11  下載：0 
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報

    • 本論文針對光纖通訊系統中接收端前級元件做相關之研究與製作，包括應用於1.55μm波段之邊耦合PIN光偵測器與次微米MSM光偵測器。
    在邊耦合PIN光偵測器方面，我們先利用光學模擬軟體BeampropTM來模擬光在其前端光波導內之傳遞情形，再利用運算軟體MATLAB以透過等效電路方式來模擬高頻的特性，以此決定邊耦合PIN光偵測器的磊晶結構及設計元件，之後請聯亞科技公司成長所設計之結構晶圓，再於本校微光電實驗室之設備製作元件，並利用本實驗室光電量測系統進行量測與分析其特性。
    在次微米MSM光偵測器方面，我們利用本校的分子束磊晶系統成長元件結構，並利用微光電實驗室之電子束微影設備製作0.2μm指金屬之MSM光偵測器，並進行量測分析並討論其特性改善之方法。

    In this thesis, the front end devices of the 1.55 um optical receiver in the fiber communication system have been researched and realized, including the PIN and MSM photodetector.
    The commercial sofewares BeampropTM and MATLAB are used to simulate the characteristic of the waveguide PIN photodetector. The waveguide PIN photodetector has been developed and its peformance has been analyzed.
    The 0.2 um finger MSM photodetector are also realized and the bandwidth characteristic has been imporved by its thin finger.

    第一章 導論 §1.1 光纖通訊之發展趨勢與應用.............................1 §1.2 論文架構.............................................4 第二章 邊耦合P-I-N光偵測器原理介紹、模擬與設計 §2.1 邊耦合P-I-N光偵測器工作原理之介紹...................5 §2.2 光波導之模擬與設計...................................9 §2.3 P-I-N光偵測器等效電路之模擬與分析...................14 第三章 邊耦合P-I-N光偵測器之製作與量測結果 §3.1 邊耦合光偵測器之製程步驟........................22 §3.1.1 p-type金屬製作................................23 §3.1.2 利用Si3N4為阻擋層與HDP蝕刻定義主動區..........24 §3.1.3 n-type金屬製作................................25 §3.1.4 前端光波導蝕刻製作............................25 §3.1.5 BCB鈍化層成長與開金屬接觸區...................27 §3.1.6 傳導金屬製作..................................27 §3.1.7 晶片研磨與劈裂................................31 §3.2 邊耦合光偵測器之量測結果與討論.................33 §3.2.1 二極體特性....................................33 §3.2.2 光響應度......................................34 §3.2.3 光混波高頻量測................................35 §3.2.4 在不同入射光功率下的頻寬表現..................38 §3.2.5 結語..........................................40 第四章 0.2微米指金屬MSM光偵測器之製作與量測 §4.1 0.2微米指金屬MSM光偵測器之製程步驟...........41 §4.1.1 align key.....................................43 §4.1.2 主動區定義....................................44 §4.1.3 傳導金屬製作..................................44 §4.1.4 0.2 um 指金屬製作.............................45 §4.1.5 絕緣隔離蝕刻與鈍化層成長......................48 §4.2 0.2微米指金屬MSM光偵測器量測結果與討論......49 §4.2.1 直流量測......................................49 §4.2.2 高頻脈衝量測..................................50 §4.2.3 結語..........................................51 第五章 結論與未來研究方向.........................53 參考文獻...............................................55

    [1]J. E. Bowers and C. A. Burrus, Jr. “Ultrawide-band long-wavelength p-i-n photodetector”, J. Lightwave Technol., vol. LT-5, pp.1339-1350, 1987.
    [2]Jasprit Singh, “Optoelectronics-An Introduction to Materials and Device”, pp.78-130, pp.253-257, 1996.
    [3]Mitsuo Fukuda,”Optical Semiconductor Devices”, pp.226-256,1999.
    [4] Y.J.Chiu,”Sub-Terahertz Traveling-Wave Low-Temperature Grown-GaAs P-I-N Photodetector”pp17-20, 1999.
    [5] Fengnian Xia; Thomson, J.K.; Gokhale, M.R.; Studenkov, P.V.; Jian Wei; Lin, W.; Forrest, S.R.” An asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler”, IEEE Photonics Technology Letters, vol.13, pp845-847, 2001.
    [6] Forrest, S.R.; Gokhale, M.R.; Studenkov, P.V.; Fengnian Xia,” High quantum efficiency, 40 GHz InGaAs twin waveguide PIN photodetectors”, Lasers and Electro-Optics Society Conference, vol.2, pp12-13, 2001.
    [7]K.Kato, Akozen, Y.Muramoto, Y.Itaya, T.Nagatsuma, M.Yaita ”A High-Efficiency 50 GHz InGaAs Multimode Waveguide Photodetector”, IEEE photonics technology letters, vol.6, pp.719-721, 1994.
    [8] ”Beamprop Version 5.0 User manual”, pp4-14, 2001.
    [9]M. Levinshtein, S. Rumyantsev, “Handbook Series On Semiconductor Paremeters”, pp153-179, 1996.
    [10]K. Kato, S.Hata,J. Yoshida, A.Kozen,”Design of High-speed and high sensitivity photodiode with an input optical waveguide on semi-insulating InP substrate”, IEEE Photonics letters, pp254-257,1997.
    [11] A.R.Clawson, ”Guide to reference on Semiconductor chemical etching”pp19,pp94-107,2001
    [12]Dennis M. Manos, ”Plasma Etching-An Introduction”, pp345-387, 1989.
    [13]J. H. Jang, S. Kim, and I. Adesida, “Electrical characteristic of Ir/Au and Pd/Ir/Au ohmic contact on p-InGaAs”, Electronics Letters , Vol.40, pp77-78, 2004.
    [14]S. Kawanishi and M. Saruwatari, “A very wide-band frequency response measurement system using optical heterodyne detection”, Instrumentation and Measurement, IEEE Transactions on, vol.38, pp.569-573, 1989.
    [15]袁榮亨，”Design, Fabrication, and Characterization of High-Speed Metal-Semiconductor-Metal Photodetectors” pp27-32, 1995.
    [16]M. Tong, A. K. Nummila, I.Adesida, “Selective wet etching InGaAs/InAlAs/InP heterostructure field-effect transistors”, Indium Phosphide and Related Materials, Fourth International Conference, pp298-301, 1992.
    [17]林書民，”應用於波長1.55μm光纖通訊前級接收放大器之設計與製作”，pp6-46,2001.

    QR CODE
    :::