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研究生： 吳錚
Cheng Wu
論文名稱： 以射頻濺鍍製作HIT太陽能電池之研究
Research on HIT Solar Cell using Radio-frequency Sputtering
指導教授： 李正中
Cheng-Chung Lee
陳昇暉
Sheng-Hui Chen
口試委員:
學位類別： 碩士
Master
系所名稱： 理學院 - 光電科學與工程學系
Department of Optics and Photonics
論文出版年： 2013
畢業學年度： 101
語文別： 中文
論文頁數： 72
中文關鍵詞： 載子生命週期 、鈍化層 、磁控濺鍍 、HIT太陽能電池
外文關鍵詞： Lifetime, Passivation, Ratio-Frequency Sputtering, HIT Solar Cell
相關次數： 點閱：15  下載：0 
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    • 本研究特色是採用磁控濺鍍製作HIT太陽能電池，比起CVD製程磁控濺鍍有著便宜又無汙染且可低溫製程的優點，剛好能與HIT太陽能電池低溫製程的特性相匹配。
    實驗中使用磁控濺鍍來成長含氫矽薄膜，藉由調變製程溫度以及製程氣體流量在矽基板上沉積本質氫化非晶矽薄膜當做鈍化層，使其載子生命週期經退火後量測能達到797μs。並將其運用於HIT太陽能電池上，於適當選擇薄膜製程條件下，可在平面型矽晶片獲得9.08%轉換效率的HIT太陽能電池。

    關鍵字：載子生命週期、鈍化層、磁控濺鍍、HIT太陽能電池

    The Characteristic of this research is used Ratio-Frequency Sputtering to fabricate HIT solar cell. The advantage of Ratio-Frequency Sputtering is cheap、 no pollution and low temperature than CVD manufacture. Sputtering exactly can match the manufacturing characteristics with HIT solar cell.
    This experiment is used Ratio-Frequency Sputtering to glow hydrogenated amorphous silicon. Changing deposition temperature and gas flow to deposit intrinsic hydrogenated amorphous silicon on silicon wafer for passivation, lifetime can reach 797μs after furnace then use the result to HIT solar cell, finally can get 9.08% efficiency HIT solar cell in appropriate deposition condition.

    Keyword：Lifetime、Passivation、Ratio-Frequency Sputtering、HIT Solar Cell

    第一章 緒論 1 1.1 研究背景 1 1.2 研究動機 3 1.3 研究規劃 4 1.4 本論文章節編排 4 第二章 理論基礎與基本特性介紹 6 2.1 物理氣相沉積法 6 2.2 電漿與濺鍍原理 6 2.3 太陽能電池工作原理 10 2.4 矽異質接面太陽能電池 12 2.5 含氫矽薄膜 14 2.6 HIT太陽能電池 15 2.7 本質矽之指標介紹 15 第三章 研究方法與分析工具 16 3.1 結晶特性量測 16 3.1.1 X光繞射儀 16 3.1.2 拉曼光譜儀 17 3.2 光電特性及矽氫鍵結量測 18 3.2.1 光學特性分析 18 3.2.2 矽氫鍵結特性分析 20 3.2.3 導電率 23 3.3 缺陷量測 25 3.3.1 吸收係數與缺陷密度 25 3.3.2 載子生命週期 29 3.4 元件特性量測 30 3.4.1 太陽能電池轉換效率量測儀器 30 第四章 本質氫化非晶矽薄膜特性 31 4.1 實驗設備流程與參數 31 4.1.1 實驗設備 31 4.1.2 實驗流程 32 4.1.3 本質氫化非晶矽薄膜製作參數 34 4.2 結構特性分析 34 4.2.1 X-ray繞射圖 34 4.2.2 拉曼光譜圖 35 4.3 光電特性與矽氫鍵結分析 37 4.3.1 光學能隙 37 4.3.2 氫含量 38 4.3.3 結構因子 38 4.3.4 氫含量與微結構因子之關係 39 4.3.5 退火對微結構因子之影響 40 4.3.6 導電率 41 4.4 缺陷特性分析 43 4.4.1 吸收係數與缺陷密度 43 4.4.2 缺陷密度與氫含量以及微結構因子之關係 44 4.4.3 載子生命週期 45 4.4.4 載子生命週期與氫含量以及微結構因子之關係 46 4.4.5 載子生命週期與缺陷密度之關係 47 4.5 本章結論 48 第五章 HIT太陽能電池製作與分析 49 5.1 元件製作流程與參數 49 5.1.1 元件製作流程 49 5.1.2 P層與I層參數 50 5.1.3 導電膜參數 50 5.1.4 電極參數 51 5.2 實驗結果與討論 52 5.2.1 元件效率分析 52 5.3 本章結論 54 第六章 結論 55 第七章 未來工作 56 參考文獻 57

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