本研究使用常壓式熱氣相沉積系統成功合成出高品質的單壁奈米碳管。利用浸漬法將醋酸鈷與醋酸鉬均勻附著於二氧化矽的基板上，並藉由製程溫度與氫氣控制奈米碳管的品質；雙金屬催化劑、催化劑濃度和二氧化矽層厚度控制奈米碳管成長密度。浸漬法結合IC製程，引用最佳實驗參數與浸漬法選擇附著的特性，製作橫向奈米碳管場效電晶體，並由I-V電性量測得知奈米碳管為半導體p-type特性，且觀察到有雙極性(Ambipolar)的現象發生。成長之奈米碳管特性由掃描式電子顯微鏡觀察形貌，透過拉曼光普分析奈米碳管的石墨化；利用徑向呼吸模數、原子力顯微鏡和穿透式電子顯微鏡對單壁奈米碳管進行直徑分析。

High quality single-walled carbon nanotubes were synthesized by atmospheric pressure Thermal CVD system. Utilize dip-coating method deposit the uniform cobalt acetate and molybdenum acetate on silicon oxide substrate. Control the quality and density of the carbon nanotubes with process temperature, hydrogen flow and bimetallic catalyst(Co/Mo), cobalt concentration, SiO2 thickness, respectively. We fabricated the back-gated SWNT field effect transistor (SWFET). Combining with the integrated-circuit(IC) techniques and dip-coating method, then quotes the best experimental parameter and absorb the characteristic of dip-coating. By I-V electricity measurement knew the carbon nanotube has p-type semiconducting, and the ambipolar phenomenon were discovered. Morphology and graphitization of Carbon nanotubes obtains by SEM and Raman spectroscopy, respectively. Diameter distribution of SWNT analyzed with radial breathing modes(RBM), AFM and TEM..

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