| 研究生: |
黃柏誠 Bo-Cheng Huang |
|---|---|
| 論文名稱: |
大面積高功率發光二極體導光元件之設計 |
| 指導教授: |
孫慶成
Ching-Cherng Sun |
| 口試委員: | |
| 學位類別: |
碩士 Master |
| 系所名稱: |
理學院 - 光電科學與工程學系 Department of Optics and Photonics |
| 畢業學年度: | 92 |
| 語文別: | 中文 |
| 論文頁數: | 62 |
| 中文關鍵詞: | 發光二極體 、高功率 、大面積 |
| 相關次數: | 點閱:6 下載:0 |
| 分享至: |
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相較於傳統燈泡,發光二極體(LED)具有省電、環保等優點,所以也有人稱LED為綠色照明。目前世界各地對於LED的研究不外乎是提升光萃取率、操作在高功率時散熱能力的提升或是白光LED的實現等等,但是對於以LED當光源的光學系統設計似乎是沒受到一定程度的重視,故本文除了會提到如何建立LED的光學模型及驗證有其準確性外,隨後會利用建立好的LED光學模型為光源,來設計符合需求的光學系統。
由於LED跟傳統燈源比起來,因為封裝型式的不一樣,會造成完全不同的光形,所以我們在設計以LED當光源的光學系統時,必須經過更仔細的光學設計,而一旦掌握光源,那麼整個光學系統的設計才會省時、精確。
1. A. Zukauskas, M. S. Shur & R. Caska ,Introduction to Solid-State Lighting, Wiley, New York, (2002).
2. Lumileds Lighting, http://www.lumileds.com.
3. M. R. Krames, M. Ochiai-Holcomb, G. E. Hofler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J-W. Huang, S.A. Stockman, F. A. Kish, and M. G. Craford, “High-power truncated-pyramid (Al0.5Ga1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. 75, 2365, (1999).
4. Osram Opto Semiconductors, http://www.osram-os.com
5. R. H. Horng, D. S. Wuu, and S. C. Wei, “AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology,” Appl. Phys. Lett. 75, 154, (1999).
6. C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface,” App. Phys. Lett. 93, 9383, (2003).
7. J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, T.-C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Gotz, N. F. Gardner, R.S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip lighting diodes,” Appl. Phys. Lett. 78, 3379, (2001).
8. S. Muthu, F. J. P. Schuurmans, and M. D. Pashley, “Red, Green, and Blue LEDs for white light illumination,” IEEE J. Select. Topics Quantum Electron., p. 333–338, Mar.–Apr., (2002).
9. R. Mueller-Mach, G. O. Mueller, M. R. Krames, and T. Trottier, “High-Power Phosphor-Converted Light-Emitting Diodes Based on III–Nitrides,” IEEE J. Select. Topics Quantum Electron., p.339–345, Mar.–Apr., (2002).
10. D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Select. Topics Quantum Electron., 310, (2002).
11. H. Kim, J. M. Lee, C. Huh, S. W. Kim, D. J. Kim, S. J. Park, and H. Hwang, “Modeling of a GaN-based light-emitting diode for uniform current spreading,” App. Phys. Lett. 77, 1903, (2000).
12. X. Guo, Y. L. Li, and E. F. Schubert, “Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry,” App. Phys. Lett. 79, 1936, (2001).
13. Breault Research Organization, http://www.bro.com
14. S. J. Lee, “Analysis of light-emitting diode by Monte Carlo photo simulation,” Appl. Opt. 40, 1427, (2001).
15. 林昭穎, “發光二極體導光機構之研究,” 中央大學光電所, (2002).
16. 黃志銘, “大面積發光二極體二維發光分佈之模擬與量測,” 中央大學光電所, (2003).
17. V. N. MAHAJAN, Optical Imaging and Aberrations, PartⅠ Ray Germetrical Optics, SPIE PRESS, Washington (1998).