在這篇論文中，為了比較雙載子電晶體及金氧半場效電晶體元件的模擬，我們利用基本的線性零組件，來完成非線性元件的模擬，我們使用的基本線性包含零組件電壓源、電容以及電壓控制電流源等。我們更進一步將元件內部參數，置於主程式中，便於使用者辨識及做調整。我們利用線性電壓控制電流源的線性零組再 利用牛頓-拉夫森法將運算得到的電流以及轉導，代入矩陣公式 中，經由牛頓-拉夫森法可以求解到 ，並探討如何用線性電壓控制電流源取代雙載子電晶體及場效電晶體元件的在程式上的差異。最後再利用金氧半場效電晶體的應用電路，來驗證程式是否正常運作。

In this thesis, to compare the bipolar-junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET) model, we develop nonlinear circuit simulations based on the linear components. The basic linear components include voltage source, resistor, capacitor, and voltage-control current source (VCCS), etc. In the program, we will use explicit representation structure to display the implicit parameters of the nonlinear elements and linear components in the main program. We use the basic linear VCCS with the current and transconductance for Newton-Raphson iteration. The difficulty of MOSFET modeling by linear VCCS will be compared to BJT modeling. We successfully verify the program by the applied circuit of MOSFETs.

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