二氧化鉿電阻式記憶體之微縮特性研究｜國立中央大學博碩士論文系統

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研究生：	曾柏憲 Bo-Shian Tzeng
論文名稱：	二氧化鉿電阻式記憶體之微縮特性研究 The research of scaling down in HfO2 RRAM
指導教授：	周正堂 Cheng-Tung Chou 李耀仁 Yao-Jen Lee
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 化學工程與材料工程學系 Department of Chemical & Materials Engineering
畢業學年度：	100
語文別：	中文
論文頁數：	97
中文關鍵詞：	二氧化鉿、微縮、電阻式記憶體
外文關鍵詞：	oxygen vacancy, scaling down, filament, RRAM, HfO2
相關次數：	點閱：19 下載：0
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電阻式記憶體(RRAM)可以說是目前最簡單結構的記憶體，而由於結構簡單所以非常適合用來微縮。再配合原有的非揮發性、快速存取能力、低耗能、低成本、保存資料能力佳的優勢，使得在未來新時代記憶體中備受矚目。如果再使用3D結構來增加密度，那電阻式記憶體在發展高密度元件有著非常強大的潛力。
而為了探討電阻式記憶體的微縮性，本實驗利用Ni/HfO2/Si的Contact hole以及Crossbar的結構，並使用不同的電極大小來微縮，而發現在這些結構中在小尺寸都會有Forming fail以及Reset fail的現象，但也了解使用比較薄的介電層由於降低Vforming可以有效的提升元件的可靠度，也了解到機台限流其實並不可靠，由於機台本身的限制，會有overshoot current，為了避免此現象一定要用1D1R或1T1R的結構才可避免。另外在記憶體中發現可以藉由限流來分離氧空缺燈絲(OF)以及金屬燈絲(MF)，而在使用氧空缺的燈絲時，會具有低功率操作的特性，再配合不同的電極，可以讓原本會出現DBIE現象的元件可以順利微縮。

Resistance Random Access Memory (RRAM) is the most simplified structure of memory, and it can be easily scaled down. RRAM has many advantages such as non-volatile property, high speed operation, low power consumption, low cost, and high data density. RRAM is the best candidate for high density device in the next generation.
In this study, we used Ni/HfO2/Si as contact hole and crossbar structure, and used different electrode sizes to scale down. But it showed “forming fail” and “reset fail” in tiny scale. Nevertheless, using thicker TMO can reduce Vforming and enhance reliability in the device. At the same time, we also realized that the instrumental compliance was not fully dependable, so it had overshoot current which could damage the device. We must use 1D1R or 1T1R structure to avoid the overshoot current. Besides, the device can use different compliance to separate the oxygen filament (OF) and metal filament (MF). When using the OF mode with different top electrode materials, it had lower power consumption. So we can reduce “forming fail” and “reset fail” probability.

摘要	i
Abstract	ii
誌謝	iii
目錄	iv
圖目錄	viii
表目錄	xii
第一章、緒論	1
1-1前言	1
1-2研究動機	2
第二章、簡介及文獻回顧	3
2-1記憶體簡介	3
2-1-1磁阻式記憶體（MRAM）	4
2-1-2鐵電記憶體（FeRAM）	5
2-1-3相變化記憶體（PCRAM）	6
2-1-4電阻式記憶體（RRAM）	7
2-2電阻式記憶體轉換現象與量測方式	8
2-2-1電阻轉換現象	8
2-2-2電阻式記憶體量測種類	10
2-3電阻轉換現象機制	13
2-3-1金屬離子的電化學效應(Electrochemical metallization effect)	14
2-3-2價電子轉換效應(Valance change effect)	16
2-3-3熱化學效應(Thermalchemical effect)	17
第三章、實驗儀器介紹	28
3-1清洗製程	28
3-1-1 Wet bench	28
3-2黃光製程	29
3-2-1自動化光阻塗佈及顯影系統(Track)	29
3-2-2光學步進機( Canon FPA-3000i5+ Stepper)	29
3-2-3 Lift-off製程	30
3-3蝕刻製程	30
3-3-1 TCP 9400SE (9400)	30
3-3-2 Mattson	31
3-4薄膜製程	31
3-4-1水平爐管	31
3-4-2垂直爐管	32
3-4-3 MOCVD(Metal-Organic Chemical Vapor Deposition)	32
3-4-4 ALDCVD (Atomic Layer Deposition)	33
3-4-5 Sputter B	33
3-5材料分析儀器	33
3-5-1 熱場發射掃描式電子顯微鏡(TF-SEM)	33
3-5-2 場發射穿透式電子顯微鏡(TEM)	34
3-6電性量測機台	35
3-6-1 IV&CV電性量測系統	35
第四章、Ni/HfO2/Si 微縮實驗	40
4-1實驗前言	40
4-2實驗流程	40
4-2-1 Contact hole製程介紹	40
4-2-2 Crossbar製程介紹	42
4-3 Forming fail	43
4-3-1 現象與觀察	43
4-3-2 物性分析討論	43
4-3-3 電性分析討論	44
4-4 Reset fail	47
4-4-1 現象與觀察	47
4-4-2 電性分析討論	48
4-4-3 物性分析討論	49
4-5 小尺寸元件綜合比較分析	50
4-6結果與討論	51
第五章、氧空缺燈絲操作的理論探討	74
5-1氧空缺燈絲介紹	74
5-2電性量測	75
5-3使用氧空缺模式改善微縮實驗	78
第六章、結論	85
6-1 Contact hole微縮部分	85
6-2 Crossbar微縮部分	85
6-3使用氧空缺燈絲來進行微縮部分	86
第七章、Future work	87
參考文獻	88

                                

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