在這篇論文中，我們使用等效電路法(equivalent circuit approach)來研究開發二維異質接面模型之建立。所謂等效電路法就是將半導體元件的柏松方程式、電子連續方程式以及電洞連續方程式轉換成等效電路。我們 先從1D pN 異質接面(hetero-junction)開始研究，建立1D pN異質接面等效電路模型，然後我們參考1D pN異質接面等效電路來建立2D 異質接面雙載子電晶體(HBT)等效電路模型。並且，我們也利用我們開發出來的模型從本質濃度的觀點來探討BJT與HBT的差異性。

In this thesis, we use the equivalent circuit approach to study 2D heterojunction modeling. Poisson’s equation and continuity equation for electron and hole are formulated into a sub-circuit format suitable for general circuit simulator in the equivalent circuit approach. We start to investigate in the one-dimensional pN hetero-junction and we built one-dimensional pN hetero-junction equivalent circuit model. Then, we refer one-dimensional pN hetero-junction equivalent circuit model to built two-dimensional HBT equivalent circuit model. Furthermore, we use the concept of intrinsic carrier concentration to discuss the difference of HBT and BJT.

[1]C.-L. Teng, “An equivalent circuit approach to mixed-
level device and circuit Simulation,” Master Thesis,
Institute of EE, NCU, 2007.
[2]Huang-Lin Fang, “New Variables and Table Method for
Carrier Calculation in Semiconductor,” Master Thesis,
Institute of EE, NCU, 2007.
[3]Zhi-Hao Lin, “An Efficient Analytical Model for
Carrier Calculation Including Fermi-Dirac Integration
and Its Application to Device Simulation,” Master
Thesis, Institute of EE, NCU, 2004.
[4]Ho-Chieh Wu, “New Variables for AC Simulation of 1-D
Semiconductor Devices,” Master Thesis, Institute of
EE, NCU, 2007.
[5]Donald A. Neamen, Semiconductor Physics & Devices,
Ed. , McGraw-Hill, pp. 355~363, 1997.
[6]William Liu, Fundamentals of Ⅲ-Ⅴ Devices, HBTs,
MESFETs and HFETs/HEMTs, John Wiley & Sons, Inc, pp.
147~149, 1999.
[7]H. C. Casey, Jr. , Device for Integrated Circuits
Silicon and Ⅲ-Ⅴ Compound Semiconductors, John Wiley &
Sons, Inc, pp. 215~218, 1999.
[8]Sau-Fu Wang, “Comparison of One-dimensional and Two-
dimensional Simulation in Bipolar Transistors,” Master
Thesis, Institute of EE, NCU, 2000.
[9]Kyounghoon Yang, Jack R. East and George I. Haddad,
“Numerical Study on the Injection Performance of
AlGaAs/GaAs Abrupt Emitter Heterojunction Bipolar
Transistors,” IEEE Transactions on Electrons Device,
Vol. 41, No. 2, February 1994.
[10]Kiyoyuki Yokoyama, Masaaki Tomizawa and Akira Yoshii,
“Accurate Modeling of AlGaAs/GaAs Heterostructure
Bipolar Transistors by Two-Dimensional,” IEEE
Transactions on Electrons Device, Vol. Ed-3141, No. 9,
Septermber 1984.
[11]Zhi-Hao Lin, “An Efficient Analytical Model for
Carrier Calculation Including Fermi-Dirac Integration
and Its Application to Device Simulation,” Master
Thesis, Institute of EE, NCU, 2004.