銅基材晶粒尺寸與優選方向對錫銅銲料反應之影響

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研究生：	黃咨鳴 Tzu-ming Huang
論文名稱：	銅基材晶粒尺寸與優選方向對錫銅銲料反應之影響 Effect of Cu substrate grain size and orientation on Sn/Cu soldering reaction
指導教授：	劉正毓 Cheng-yi Liu
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學與工程研究所 Graduate Institute of Materials Science & Engineering
畢業學年度：	96
語文別：	中文
論文頁數：	52
中文關鍵詞：	晶粒尺寸、優選方向
外文關鍵詞：	grain size, orientation
相關次數：	點閱：9 下載：0
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二元錫銅系統在目前的IC封裝與電子工業裡是最重要的反應系統，雖然錫銅反應已經被研究了很長的一段時間，但是為了要更了解這個系統，還是有非常多的研究正在持續進行，很多研究已經提出在錫銅界面會產生扇貝狀的介金屬化合物，但是還沒有提到銅基材的性質與界面反應的關係。此除之外，銅消耗量在無鉛銲料與銅基材的接點反應也是一個重要的議題，本研究將會探討銅基材的微觀結構與界面反應的關聯。
先以金相檢測還有XRD分析來區分銅基材的性質，分別有晶粒大小與優選方向的差異。在銅消耗量實驗，以350 μm之純錫銲料球跟銅基材在250 ℃下進行1、5、10、15分鐘的反應，從中可以發現晶粒較大的銅基材會有較小的銅消耗量，而[220]優選方向的銅基材也會有較小的銅消耗量。在介金屬化合物的形貌實驗，以0.1克之純錫銲料球跟銅基材在250 ℃下進行30分鐘的反應，其Cu6Sn5與銅基材之夾角分佈也因銅基材的晶粒尺寸與優選方向的不同而有明顯的差異。

The binary Cu/Sn soldering system is the most important joint system in the current IC packaging and assembly industry. Although, the simple Sn/Cu reaction has been studied for a very long history, still, there are lots of research going on to understand it more. The scallop-type Cu-Sn compound grains formed at the Sn/Cu joint interface have reported by numerous researchers. Yet, none of them describe the relationship between the properties of Cu substrate and interfacial reaction. Also, the Cu consumption is a typical issue for Pb-free solders jointed with Cu-based bond pad. In this thesis, we will study the correlation between the microstructure of Cu substrate and the interfacial reaction.
In this investigation, the Cu foils were performed by metallurgical examination and XRD analysis to examine the grain size morphology and preferred orientation distribution. In Cu consumption experiments, 350 μm Sn solder balls were placed on the pre-fluxed Cu foils and reflowed on the hot plate at 250 °C for 1, 5, 10, and 15 minutes. We found that the Cu consumption of Cu substrate with the (200) plane is larger than that with the (220) plane, and it is also decreasing with increasing grain size of Cu. In IMC morphology experiments, 0.1 g pure Sn were placed on the pre-fluxed Cu foils and reflowed on the hot plate at 250 °C for 30 minutes. From the observation, the IMC morphologies would be different due to the grain size and preferred orientation of Cu substrate.

中文摘要………………………………………………………………i
英文摘要………………………………………………………………ii
目錄…………………………………………………………………iii
圖目錄…………………………………………………………………v
表目錄………………………………………………………………viii
第一章  序論…………………………………………………………1
第二章  文獻回顧……………………………………………………4
2.1  覆晶(Flip Chip)封裝…………………………………………4
2.2  錫銅反應………………………………………………………10
2.3  晶體結構………………………………………………………13
2.3.1  晶系(Crystal systems)…………………………………13
2.3.2  米勒指數(Miller indices)……………………………14
2.4  晶粒尺寸的計算………………………………………………17
第三章  研究方法與步驟……………………………………………19
3.1  實驗材料………………………………………………………19
3.2  實驗樣品製作…………………………………………………19
3.2.1  計算銅消耗量與介金屬化合物厚度之試片……………19
3.2.2  觀察介金屬化合物型貌之試片…………………………21
3.3  實驗樣品分析…………………………………………………24
3.3.1  計算銅消耗量與介金屬化合物之試片…………………24
3.3.2  觀察介金屬化合物型態之試片…………………………24
3.3.3  X光繞射分析(XRD)………………………………………24
3.3.4  背向散射電子顯微鏡(BSE)………………………………25
第四章  結果與討論…………………………………………………26
4.1  銅基材的性質…………………………………………………26
4.1.1  金相檢測…………………………………………………26
4.1.2  X光繞射分析………………………………………………27
4.2  銅基材的性質對銅消耗量的影響……………………………30
4.2.1  晶粒尺寸效應……………………………………………34
4.2.2  優選方向效應……………………………………………35
4.3  銅基材性質對介金屬化合物形貌的影響……………………40
第五章  結論…………………………………………………………48
參考文獻………………………………………………………………50

                                

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